Si1034X Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free Option Available RDS(on) (Ω) ID (mA) 5 at VGS = 4.5 V 200 • TrenchFET® Power MOSFET: 1.5 V Rated 7 at VGS = 2.5 V 175 • Low-Side Switching 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 RoHS COMPLIANT • Low On-Resistance: 5 Ω • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 35 ns (typ.) • 1.5 V Operation • Gate-Source ESD Protected: 2000 V SC-89 BENEFITS S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 • Ease in Driving Switches • Low Offset (Error) Voltage Marking Code: L • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation Top View APPLICATIONS Ordering Information: Si1034X-T1-E3 (Lead (Pb)-free) Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free) • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±5 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain TA = 25 °C TA = 85 °C Currentb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) 190 IS TA = 25 °C TA = 85 °C PD V 180 140 IDM Continuous Source Current (Diode Conduction) Maximum Power Dissipationa ID Unit 130 650 450 380 280 250 145 130 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71427 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Si1034X Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit 1.2 V VDS = 0 V, VGS = ± 2.8 V VDS = VGS, ID = 250 µA 0.40 ± 0.5 ± 1.0 VDS = 0 V, VGS = ± 4.5 V ± 1.0 ± 3.0 VDS = 16 V, VGS = 0 V 1 500 nA 10 µA Static VGS(th) Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistance VDS = 5 V, VGS = 4.5 V RDS(on) a a a 250 mA VGS = 4.5 V, ID = 200 mA 5 VGS = 2.5 V, ID = 175 mA 7 VGS = 1.8 V, ID = 150 mA 9 VDS = 1.5 V, ID = 40 mA 10 gfs VDS = 10 V, ID = 200 mA VSD IS = 150 mA, VGS = 0 V Forward Transconductance Diode Forward Voltage VDS = 16 V, VGS = 0 V, TJ = 85 °C µA Ω 0.5 S 1.2 V b Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 750 VDS = 10 V, VGS = 4.5 V, ID = 150 mA 50 VDD = 10 V, RL = 47 Ω ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω tr Rise Time td(off) Turn-Off Delay Time pC 75 225 25 tf Fall Time ns 50 25 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 600 0.5 TJ = - 55 °C VGS = 5 thru 1.8 V 500 I D - Drain Current (mA) I D - Drain Current (A) 0.4 0.3 0.2 0.1 25 °C 400 125 °C 300 200 100 1V 0.0 0 www.vishay.com 2 1 2 3 4 5 6 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 Document Number: 71427 S-80643-Rev. B, 24-Mar-08 Si1034X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 100 40 80 30 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 0 V f = 1 MHz 20 VGS = 1.8 V Ciss 60 40 10 Coss 20 VGS = 2.5 V VGS = 4.5 V 0 50 100 150 200 0 250 4 8 12 16 I D - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 20 1.60 VDS = 10 V ID = 150 mA 4 1.40 3 2 VGS = 4.5 V ID = 200 mA (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) Crss 0 0 1 1.20 VGS = 1.8 V ID = 175 mA 1.00 0.80 0 0.0 0.2 0.4 0.6 0.60 - 50 0.8 - 25 Q g - Total Gate Charge (nC) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 1000 ID = 200 mA R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = 50 °C 10 40 ID = 175 mA 30 20 10 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Surge-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71427 S-80643-Rev. B, 24-Mar-08 6 www.vishay.com 3 Si1034X Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 3.0 0.3 2.5 ID = 0.25 mA 2.0 0.1 IGSS - (µA) VGS(th) Variance (V) 0.2 0.0 1.5 - 0.1 1.0 - 0.2 0.5 VGS = 2.8 V - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 0 50 75 100 125 TJ - Temperature (°C) TJ - Temperature (°C) IGSS vs. Temperature Threshold Voltage Variance vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) 25 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10-2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71427. www.vishay.com 4 Document Number: 71427 S-80643-Rev. B, 24-Mar-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1