Si2304BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* * Marking Code Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a, b IS TA = 25 °C TA = 70 °C PD 3.2 2.6 2.1 10 0.9 0.62 1.08 0.75 0.69 0.48 TJ, Tstg Operating Junction and Storage Temperature Range V 2.5 IDM Pulsed Drain Current Maximum Power Dissipationa, b ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 90 115 130 166 60 75 Unit °C/W Notes: a. Surface Mounted on FR4 board, t ≤ 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72503 S-80642-Rev. D, 24-Mar-08 www.vishay.com 1 Si2304BDS Vishay Siliconix SPECIFICATIONS TA = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Unit Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 30 VGS(th) VDS = VGS, ID = 250 µA 1.5 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 30 V, VGS = 0 V 0.5 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 VDS = 30 V, VGS = 1.0 V, TJ = 25 °C 1 Gate-Threshold Voltage Gate-Body Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta VDS ≥ 4.5 V, VGS = 10 V ID(on) Drain-Source On-Resistancea RDS(on) Forward Transconductancea Diode Forward Voltage V 3.0 nA µA 6 A VGS = 10 V, ID = 2.5 A 0.055 0.070 VGS = 4.5 V, ID = 2.0 A 0.080 0.105 gfs VDS = 4.5 V, ID = 2.5 A 6.0 VSD IS = 1.25 A, VGS = 0 V 0.8 VDS = 15 V, VGS = 5 V, ID = 2.5 A Ω S 1.2 V Dynamic Gate Charge Qg Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 10 V, ID = 2.5 A 2.6 4 4.6 7 nC 0.8 1.15 f = 1.0 MHz Ω 3.0 225 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 50 28 Switching td(on) Turn-On Delay Time VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 7.5 12 12.5 20 19 30 15 25 ns Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS = 10 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 8 6 4 4V 6 4 TC = 125 °C 2 2 25 °C - 55 °C 3V 0 0 0 www.vishay.com 2 2 4 6 8 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 Document Number: 72503 S-80642-Rev. D, 24-Mar-08 Si2304BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 350 0.24 300 0.16 0.12 VGS = 4.5 V 0.08 VGS = 10 V 200 150 100 Coss 0.04 50 0 2 4 6 8 0 10 5 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 30 1.6 10 VGS = 10 V ID = 2.5 A VDS = 15 V ID = 2.5 A 1.4 6 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) Crss 0 0.00 1.2 1.0 0.8 2 0.6 - 50 0 0 1 2 3 4 5 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 0.20 R DS(on) - On-Resistance (Ω) TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.001 0.0 - 25 Qg - Total Gate Charge (nC) 10 I S - Source Current (A) Ciss 250 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.20 0.16 ID = 2.5 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72503 S-80642-Rev. D, 24-Mar-08 10 www.vishay.com 3 Si2304BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 10 8 ID = 250 µA 0.0 Power (W) VGS(th) Variance (V) 0.2 - 0.2 TA = 25 °C Single Pulse 6 4 - 0.4 2 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 0 0.01 150 1 0.1 10 100 600 Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 10 µs 100 µs 1 1 ms 10 ms TA = 25 °C Single Pulse 0.1 100 ms DC, 100 s, 10 s, 1 s 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10- 4 10- 3 4. Surface Mounted 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72503. www.vishay.com 4 Document Number: 72503 S-80642-Rev. D, 24-Mar-08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1