Si3455DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 30 rDS(on) (W) ID (A) 0.100 @ VGS = −10 V "3.5 0.190 @ VGS = −4.5 V "2.5 D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information: Si3455DV-T1 Si3455DV-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS −30 Gate-Source Voltage VGS "20 TA = 25_C Continuous Drain Current (TJ = 150_C)a TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range ID V "3.5 "2.7 IDM "20 IS −1.7 PD Unit 2.0 1.3 A W TJ, Tstg −55 to 150 _C Symbol Limit Unit RthJA 62.5 _C/W THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide Web: http://www.Siliconix.com/www/product/spice.htm Document Number: 70194 S-50694—Rev. E, 18-Apr-05 www.vishay.com 1 Si3455DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −1.0 Typ Max Unit −3.0 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V −1 VDS = −30 V, VGS = 0 V, TJ = 70_C −5 VDS = −5 V, VGS = −10 V −15 A VGS = −10 V, ID = −3.5 A 0.080 0.100 VGS = −4.5 V, ID = −2.5 A 0.134 0.190 gfs VDS = −15 V, ID = −3.5 A 4.0 VSD IS = −1.7 A, VGS = 0 V rDS(on) mA W S −1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs 5.1 VDS = −10 V, VGS = −10 V, ID = −3.5 A 10 1.5 nC Gate-Drain Charge Qgd 1.0 Turn-On Delay Time td(on) 10 20 tr 15 30 20 35 10 20 50 80 Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −10 V, RG = 6 W IF = −1.7 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70194 S-50694—Rev. E, 18-Apr-05 Si3455DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 10, 9, 8, 7 V TC = −55_C 6V 16 16 25_C I D − Drain Current (A) I D − Drain Current (A) 5V 12 8 4V 4 125_C 12 8 4 3V 0 0 0 1 2 3 4 0 1 2 3 6 7 Capacitance On-Resistance vs. Drain Current 580 0.30 500 Ciss 0.24 C − Capacitance (pF) r DS(on)− On-Resistance ( W ) 5 VGS − Gate-to-Source Voltage (V) VDS − Drain-to-Source Voltage (V) VGS = 4.5 V 0.18 VGS = 10 V 0.12 0.06 420 340 Coss 260 180 Crss 100 0.00 20 0 4 8 12 16 20 0 6 18 24 30 On-Resistance vs. Junction Temperature Gate Charge 1.60 10 VDS = 15 V ID = 3.5 A 1.45 rDS(on) − On-Resiistance (Normalized) 8 6 4 2 0 0.0 12 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) 4 VGS = 10 V ID = 3.5 A 1.30 1.15 1.00 0.85 1.5 3.0 4.5 Qg − Total Gate Charge (nC) Document Number: 70194 S-50694—Rev. E, 18-Apr-05 6.0 0.70 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si3455DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage r DS(on)− On-Resistance ( W ) I S − Source Current (A) 10 TJ = 150_C On-Resistance vs. Gate-to-Source Voltage 0.40 20 TJ = 25_C 0.32 0.24 0.16 ID = 3.5 A 0.08 0.00 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 1.75 VSD − Source-to-Drain Voltage (V) 2 4 Threshold Voltage 10 Single Pulse Power 30 0.45 24 ID = 250 mA 0.30 Power (W) VGS(th) Variance (V) 8 VGS − Gate-to-Source Voltage (V) 0.60 0.15 18 12 0.00 6 −0.15 −0.30 −50 −25 0 25 50 75 100 125 150 0 0.01 0.10 10.00 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 1.00 Time (sec) TJ − Temperature (_C) Normalized Effective Transient Thermal Impedance 6 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 30 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70194. www.vishay.com 4 Document Number: 70194 S-50694—Rev. E, 18-Apr-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1