Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si4410BDY Si4410BDY—T1 (with Tape and Reel) Si4410BDY—E3 (Lead (Pb)-Free) Si4410BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Continuous Source Current (Diode Conduction)a IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 10 7.5 8 6 IDM Pulsed Drain Current (10 ms Pulse Width) Maximum Power Dissipationa ID 50 2.3 1.26 2.5 1.4 1.6 0.9 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 90 25 30 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72211 S-50366—Rev. C, 28-Feb-05 www.vishay.com 1 Si4410BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V 3.0 V VDS = 30 V, VGS = 0 V "100 1 nA VDS = 30 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea 20 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 10 A 0.011 0.0135 VGS = 4.5 V, ID = 5 A 0.0165 0.020 Forward Transconductancea gfs VDS = 15 V, ID = 10 A 25 Diode Forward Voltagea VSD IS = 2.3 A, VGS = 0 V 0.76 1.1 Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 10 A 13 20 Total Gate Charge Qgt 25 40 Gate-Source Charge Qgs 5.5 Gate-Drain Charge Qgd Gate Resistance Rg W S V Dynamicb Turn-On Delay Time VDS = 15 5 V,, VGS = 10 0 V,, ID = 10 0A 3.7 f = 1 MHz 0.5 td(on) Rise Time tr Turn-Off Delay Time VDD = 25 V, RL = 25 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = 2.3 A, di/dt = 100 A/ms 1.6 2.7 10 15 10 15 40 60 15 25 35 70 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 Transfer Characteristics 50 VGS = 10 thru 5 V 40 30 4V 20 10 2V 0 0.0 www.vishay.com 30 20 TC = 125_C 10 25_C 3V −55_C 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS − Drain-to-Source Voltage (V) 2 I D − Drain Current (A) I D − Drain Current (A) 40 3.5 4.0 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72211 S-50366—Rev. C, 28-Feb-05 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 2000 0.025 Ciss 1600 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.030 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 1200 800 Coss 400 0.005 0.000 Crss 0 0 10 20 30 40 0 50 6 ID − Drain Current (A) rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 6 4 2 30 VGS = 10 V ID = 10 A 1.6 1.2 0.8 0.4 0 0 5 10 15 20 0.0 −50 25 −25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) − On-Resistance ( W ) 50 TJ = 150_C 10 TJ = 25_C 0.08 ID = 10 A 0.06 0.04 0.02 0.00 1 0.00 25 TJ − Junction Temperature (_C) Qg − Total Gate Charge (nC) I S − Source Current (A) 24 On-Resistance vs. Junction Temperature 2.0 VDS = 15 V ID = 10 A 8 18 VDS − Drain-to-Source Voltage (V) Gate Charge 10 12 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) Document Number: 72211 S-50366—Rev. C, 28-Feb-05 1.0 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 50 0.4 ID = 250 mA 40 0.0 Power (W) V GS(th) Variance (V) 0.2 −0.2 −0.4 30 TA = 25_C 20 −0.6 10 −0.8 −1.0 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) 100 Safe Operating Area, Junction-to-Case *rDS(on) Limited 100 ms, 10 ms 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25_C Single Pulse dc, 100 s 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72211 S-50366—Rev. C, 28-Feb-05 Si4410BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72211. Document Number: 72211 S-50366—Rev. C, 28-Feb-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1