Si3445DV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) () ID (A) 0.042 @ VGS = −4.5 V "5.6 0.060 @ VGS = −2.5 V "4.7 0.080 @ VGS = −1.8 V "2.9 TSOP-6 Top View (4) S 3 mm 1 6 2 5 3 4 (3) G (1, 2, 5, 6) D 2.85 mm Ordering Information: Si3445DV-T1 Si3445DV-T1—E3 (Lead (Pb)-Free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS −8 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a, b TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 25_C Maximum Power Dissipationa, b TA = 70_C Operating Junction and Storage Temperature Range Unit V "5.6 ID "4.5 IDM "20 IS −1.7 A 2.0 PD W 1.3 TJ, Tstg −55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Symbol t v 5 sec Steady State RthJA Typical Maximum 62.5 106 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. Document Number: 70820 S-50129—Rev. B, 24-Jan-05 www.vishay.com 1 Si3445DV Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 A −0.45 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Typ Max Unit −1.0 V VDS = 0 V, VGS = "8 V "100 nA VDS = −8 V, VGS = 0 V −1 VDS = −8 V, VGS = 0 V, TJ = 70_C −5 Static Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) VDS w −5 V, VGS = −4.5 V −15 A A VGS = −4.5 V, ID = −5.6 A 0.034 0.042 VGS = −2.5 V, ID = −4.7 A 0.048 0.060 VGS = −1.8 V, ID = −2.0 A 0.062 0.080 gfs VDS = −10 V, ID = −5.6 A 15 VSD IS = −1.7 A, VGS = 0 V 0.7 −1.2 15 25 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = −4 V, VGS = −4.5 V, ID = −5.6 A 3 nC Gate-Drain Charge Qgd 2 Turn-On Delay Time td(on) 20 40 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = −4 V, RL = 4 ID ^ −1 A, VGEN = −4.5 V, Rg = 6 IF = −1.7 A, di/dt = 100 A/s 50 100 110 220 60 120 60 100 ns Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70820 S-50129—Rev. B, 24-Jan-05 Si3445DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 2.5 V TC = −55_C 16 VGS = 5 thru 3 V I D − Drain Current (A) I D − Drain Current (A) 16 2V 12 1.8 V 8 1.5 V 4 1V 0 0 1 2 3 25_C 12 125_C 8 4 0 0.0 4 0.5 VDS − Drain-to-Source Voltage (V) 1.0 1.5 On-Resistance vs. Drain Current Ciss 2000 0.16 C − Capacitance (pF) r DS(on) − On-Resistance ( ) 3.0 Capacitance 2500 VGS = 1.8 V 0.12 VGS = 2.5 V VGS = 4.5 V 0.04 2.5 VGS − Gate-to-Source Voltage (V) 0.20 0.08 2.0 1500 1000 Coss 500 Crss 0.00 0 0 4 8 12 16 20 0 2 Gate Charge 8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.6 A rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 1.50 VDS = 4 V ID = 5.6 A 4 6 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) 5 4 3 2 1.25 1.00 1 0 0 4 8 12 Qg − Total Gate Charge (nC) Document Number: 70820 S-50129—Rev. B, 24-Jan-05 16 0.75 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si3445DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.16 r DS(on)− On-Resistance ( ) 0.20 I S − Source Current (A) 20 TJ = 150_C TJ = 25_C 1 0.00 On-Resistance vs. Gate-to-Source Voltage 0.12 ID = 5.6 A 0.08 0.04 0.00 0.25 0.50 0.75 1.00 1.25 0 1.50 VSD − Source-to-Drain Voltage (V) 1 3 4 5 VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.4 2 Single Pulse Power 25 20 Power (W) VGS(th) Variance (V) 0.2 ID = 250 A 15 10 0.0 5 −0.2 −50 0 −25 0 25 50 75 100 125 150 0.01 1 0.1 TJ − Temperature (_C) Normalized Effective Transient Thermal Impedance 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 10 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 106_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 0.01 10−4 t1 t2 4. Surface Mounted 10−3 10−2 10−1 1 Square Wave Pulse Dureation (sec) 10 100 600 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70820. www.vishay.com 4 Document Number: 70820 S-50129—Rev. B, 24-Jan-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1