VISHAY TSML1030

TSML1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Extented Power IR Emitting Diode in SMD Package
Description
TSML1000
TSML1000 series are high efficiency infrared emitting
diodes in GaAlAs on GaAs technology molded in
clear SMD package.
This technology represents best performance for radiant power under pulse conditions, forward voltage
and reliability.
TSML1020
TSML1030
TSML1040
Features
•
•
•
•
•
•
•
•
Outstanding high radiant power
Low forward voltage
Suitable for high pulse current operation
Angle of half intensity ϕ = ± 12°
Peak wavelength λp = 950 nm
High reliability
Matched Phototransistor series: TEMT1000
Versatile terminal configurations
16852
Applications
For remote control
Photointerrupters
Punched tape readers
Encoder
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Reverse Voltage
Parameter
Test condition
VR
5
V
Forward Current
IF
100
mA
200
mA
Peak Forward Current
tp/T = 0.5, tp = 100 µs
IFM
Surge Forward Current
tp = 100 µs
Unit
IFSM
1.0
A
Power Dissipation
PV
190
mW
Junction Temperature
Tj
100
°C
Operating Temperature Range
Tamb
- 40 to + 85
°C
Storage Temperature Range
Tstg
- 40 to + 100
°C
Tsd
<260
°C
RthJA
400
°C
t ≤ 5sec
Soldering Temperature
Thermal Resistance Junction/Ambient
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Tamb = 25 °C, unless otherwise specified
Parameter
Forward Voltage
Typ.
Max
Unit
IF = 20 mA, tp = 20 ms
Test condition
Symbol
VF
1.2
1.5
V
IF = 1 A, tp = 100 µs
VF
2.6
V
TKVF
- 1.85
mV/K
Temp. Coefficient of VF
IF = 1 mA
Reverse Current
VR = 5 V
IR
Junction Capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
Radiant Intensity
IF = 20 mA, tp = 20 ms
Ie
Document Number 81033
Rev. 6, 21-May-03
Min
10
3
µA
25
pF
7
mW/sr
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TSML1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
φe
35
mW
IF = 20 mA
TKφe
- 0.6
%/K
ϕ
±12
deg
Peak Wavelength
IF = 100 mA
λp
950
nm
Spectral Bandwidth
IF = 100 mA
∆λ
50
nm
Temp. Coefficient of λp
IF = 100 mA
TKλp
0.2
nm/K
Rise Time
IF = 100 mA
tr
800
ns
Fall Time
IF = 100 mA
tf
800
ns
Radiant Power
IF = 100 mA, tp = 20 ms
Temp. Coefficient of φe
Angle of Half Intensity
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
200
10000
I F - Forward Current ( mA )
PV - Power Dissipation ( mW )
180
160
140
120
100
80
60
40
0.1
0.05
1000
0.02
tp / T = 0.01
0.2
100
0.5
1.0
20
0
0
T amb - Ambient Temperature ( ° C )
16187
10
0.01
10 20 30 40 50 60 70 80 90 100
Figure 1. Power Dissipation vs. Ambient Temperature
0.10
1.00
10.00
100.00
t p - Pulse Duration ( ms )
14335
Figure 3. Pulse Forward Current vs. Pulse Duration
10 4
100
80
60
40
20
0
16188
I F - Forward Current ( mA )
I F - Forward Current ( mA )
120
10 2
t p = 100 µ s
tp / T = 0.001
10 1
10 0
0
10 20 30 40 50
T amb - Ambient Temperature ( ° C )
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0
60 70 80 90 100
Figure 2. Forward Current vs. Ambient Temperature
2
10 3
13600
1
2
3
4
V F - Forward Voltage ( V )
Figure 4. Forward Current vs. Forward Voltage
Document Number 81033
Rev. 6, 21-May-03
TSML1000/1020/1030/1040
VISHAY
Vishay Semiconductors
1.6
V Frel - Relative Forward Voltage
1.2
1.1
1.2
I e rel , Φ e rel
I F = 10 mA
1.0
0.9
0.8
0.4
0.8
0
-10 0 10
0.7
0
20
40
60
80
100
T amb - Ambient Temperature ( ° C )
94 7990 e
Figure 5. Relative Forward Voltage vs. Ambient Temperature
50
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1.25
Φˇ e rel - Relative Radiant Power
100
10
1
0.1
10 0
16189
10 1
10 2
10 3
I F - Forward Current ( mA )
1.0
0.75
0.5
0.25
I F = 100 mA
0
900
10 4
λ - Wavelength ( nm )
Figure 9. Relative Radiant Power vs. Wavelength
0°
Srel - Relative Sensitivity
1000
100
10
1
1000
950
94 7994 e
Figure 6. Radiant Intensity vs. Forward Current
Φ e - Radiant Power ( mW )
140
100
T amb - Ambient Temperature ( ° C )
94 7993 e
1000
I e - Radiant Intensity ( mW/sr )
I F = 20 mA
10 °
20 °
30°
40°
1.0
0.9
50°
0.8
60°
0.7
70°
80°
0.1
10 0
13602
10 1
10 2
10 3
I F - Forward Current ( mA )
Figure 7. Radiant Power vs. Forward Current
Document Number 81033
Rev. 6, 21-May-03
0.6
10 4
0.4
0.2
0
0.2
0.4
0.6
94 8243
Figure 10. Relative Radiant Sensitivity vs. Angular Displacement
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TSML1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Package Dimensions in mm
TSML1000
16159
Package Dimensions in mm
TSML1020
16160
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Document Number 81033
Rev. 6, 21-May-03
VISHAY
TSML1000/1020/1030/1040
Vishay Semiconductors
Package Dimensions in mm
TSML1030
16228
Package Dimensions in mm
TSML1040
16760
Document Number 81033
Rev. 6, 21-May-03
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TSML1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Reel Dimensions
18033
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6
Document Number 81033
Rev. 6, 21-May-03
VISHAY
TSML1000/1020/1030/1040
Vishay Semiconductors
Taping TSML1000
18030
Taping TSML1020
18031
Document Number 81033
Rev. 6, 21-May-03
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7
TSML1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Taping TSML1030
18032
1. Over-current-proof
Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change
(Burn out will happen).
2. Storage
2.1 Storage temperature and rel. humidity conditions
are: 5°C to 35°C, R.H. 60%
2.2 Floor life must not exceed 168 h, acc. to JEDEC
level 3, J-STD-020.
Once the package is opened, the products should be
used within a week. Otherwise, they should be kept in
a damp proof box with desiccant.
Considering tape life, we suggest to use products
within one year from production date.
2.3 If opened more than one week in an atmosphere
5°C to 35°C, R.H. 60%, devices should be treated at
60°C ± 5°C for 15 hrs.
2.4 If humidity indicator in the package shows pink
color (normal blue), then devices should be treated
with the same conditions as 2.3
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Reflow Solder Profile
260
240
220
Temperature ( q C )
Precautions For Use
200
+ 5 qC/s
– 5 qC/s
180
160
140
120
60 s to 120 s
5s
100
80
60
0
17172
20 40 60 80 100 120 140 160 180 200 220
Time ( s )
Document Number 81033
Rev. 6, 21-May-03
TSML1000/1020/1030/1040
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81033
Rev. 6, 21-May-03
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