TSHA440. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1) Package Description 94 8398 The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 % radiant power improvement. Features D Extra high radiant power D High radiant intensity for long transmission distance D Suitable for high pulse current operation D Standard T–1(ø 3 mm) package for low space application D D D D Angle of half intensity ϕ = ± 20° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications Infrared remote control and free air transmission systems with high power requirements in combination with PIN photodiodes or phototransistors. Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81017 Rev. 2, 20-May-99 Test Conditions tp/T = 0.5, tp = 100 ms tp = 100 ms t x 5sec, 2 mm from case Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2 180 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W www.vishay.de • FaxBack +1-408-970-5600 1 (5) TSHA440. Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Test Conditions IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA Temp. Coefficient of VF Reverse Current Junction Capacitance Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Symbol VF VF TKVF IR Cj TKfe ϕ Typ 1.5 3.2 –1.6 Max 1.8 4.9 100 20 –0.7 ±20 875 80 0.2 600 300 600 300 lp Dl IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Fall Time Min TKlp tr tr tf tf Unit V V mV/K mA pF %/K deg nm nm nm/K ns ns ns ns Type Dedicated Characteristics Tamb = 25_C Parameter Radiant Intensity y Test Conditions IF=100mA, tp=20ms IF=1.5A, tp=100ms Radiant Power IF=100mA, tp=20ms Type TSHA4400 TSHA4401 TSHA4400 TSHA4401 TSHA4400 TSHA4401 Symbol Ie Ie Ie Ie fe fe Min 12 16 140 190 Typ 20 30 240 360 20 24 Max Unit mW/sr mW/sr mW/sr mW/sr mW mW Typical Characteristics (Tamb = 25_C unless otherwise specified) 125 IF – Forward Current ( mA ) PV – Power Dissipation ( mW ) 250 200 150 RthJA 100 50 100 75 50 25 0 0 0 12789 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) 0 94 7941 e 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Document Number 81017 Rev. 2, 20-May-99 TSHA440. Vishay Telefunken 1000 I e – Radiant Intensity ( mW/sr ) I F – Forward Current ( A ) 101 tp / T = 0.01, IFM = 2 A 0.02 100 0.05 0.1 0.2 TSHA 4401 100 TSHA 4400 10 0.5 10–1 10–2 94 7947 e 1 10–1 100 101 tp – Pulse Duration ( ms ) 102 100 Figure 3. Pulse Forward Current vs. Pulse Duration 1000 tp = 100 ms tp / T = 0.001 103 Fe – Radiant Power ( mW ) IF – Forward Current ( mA ) 104 Figure 6. Radiant Intensity vs. Forward Current 104 102 101 100 10 1 0.1 0 1 2 4 3 VF – Forward Voltage ( V ) 94 8005 e 100 101 102 103 IF – Forward Current ( mA ) 94 7943 e Figure 4. Forward Current vs. Forward Voltage 104 Figure 7. Radiant Power vs. Forward Current 1.2 1.6 1.1 1.2 IF = 10 mA I e rel ; Fe rel V Frel – Relative Forward Voltage 101 102 103 IF – Forward Current ( mA ) 94 7942 e 1.0 IF = 20 mA 0.8 0.9 0.4 0.8 0.7 0 94 7990 e 20 40 60 80 Tamb – Ambient Temperature ( °C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Document Number 81017 Rev. 2, 20-May-99 0 –10 0 10 100 94 8020 e 50 100 140 Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 3 (5) TSHA440. Vishay Telefunken 0° I e rel – Relative Radiant Intensity Fe – Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 0 780 94 8000 e IF = 100 mA Fe ( l ) rel = Fe ( l ) / Fe ( lp ) 880 10 ° 20 ° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 980 l – Wavelength ( nm ) Figure 9. Relative Radiant Power vs. Wavelength 0.6 0.4 0.2 0 0.2 0.4 0.6 94 7944 e Figure 10. Relative Radiant Intensity vs. Angular Displacement Dimensions in mm 95 10951 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 81017 Rev. 2, 20-May-99 TSHA440. Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81017 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)