VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V –2 to –4.5 –0.6 2 @ VGS = –12 V –2 to –4.5 –0.6 –30 VQ2001J VQ2001P FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control High-Side Switching Low On-Resistance: 1.5 W Moderate Threshold: –3.1 V Fast Switching Speed: 17 ns Low Input Capacitance: 60 pF TO-226AA (TO-92) S G D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer Dual-In-Line TO-92S (Copper Lead Frame) 1 2 G 2 D 3 P 1 S 3 P D1 1 14 D4 S1 2 13 S4 G1 3 12 G4 NC 4 11 NC G2 5 10 G3 S2 6 9 S3 8 D3 D2 Top View Top View VP0300L VP0300LS 7 P P Top View Plastic: VQ2001J Sidebraze: VQ2001P For device marking, see the last page of this data sheet. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) VQ2001J/P Symbol VP0300L VP0300LS Single Total Quad Drain-Source Voltage VDS –30 –30 –30 –30 Gate-Source Voltage VGS "20 "20 "20 "20 Parameter Continuous Drain Current (TJ = 150_C) TA= 25_C ID TA= 100_C Pulsed Drain Currenta Power Dissipation IDM TA= 25_C PD TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range RthJA TJ, Tstg –0.32 –0.5 –0.6 –0.6 –0.2 –0.32 –0.37 –0.37 –2.4 –3 –2 –2 0.8 0.9 1.3 2 0.32 0.4 0.52 0.8 156 139 96 62.5 –55 to 150 Unit V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. Document Number: 70217 S-04279—Rev. E, 16-Jul-01 www.vishay.com 11-1 VP0300L/LS, VQ2001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VP0300L/LS Parameter Symbol Test Conditions Typa Min Max VQ2001J/P Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS = 0 V, ID = –10 mA –55 –30 VGS(th) VDS = VGS, ID = –1 mA –3.1 –2 –30 –4.5 –2 TJ = 125_C IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 0 V, VGS = "20 V "100 VDS = –24 V, VGS = 0 V –10 –500 TJ = 125_C VDS = –30 V, VGS = 0 V Drain-Source On-Resistanceb rDS(on) "500 nA –500 mA –10 VDS = –10 V, VGS = –12 V –2.8 VGS = –12 V, ID = –1 A 1.5 2.5 2 2.6 3.6 3.6 TJ = 125_C V "100 VDS = 0 V, VGS = "16 V Gate-Body Leakage –4.5 Forward Transconductanceb gfs VDS = –10 V, ID = –0.5 A 370 Common Source Output Conductanceb gos VDS = –7.5 V, ID = –0.05 A 0.25 –1.5 –1.5 200 A W 200 mS Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 60 150 150 40 100 100 10 60 60 VDD = –25 V, RL = 23 W ID ^ –1 A, VGEN = –10 V RG = 25 W 19 30 17 30 VDD =–15 V, RL = 23 W ID ^ –0.6 A, VGEN = –10 V RG = 25 W 19 30 16 30 VDS = –15 V, VGS = 0 V f = 1 MHz pF Switchingc Turn-On Time tON Turn-Off Time tOFF Turn-On Time tON Turn-Off Time tOFF Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VPEA03 Document Number: 70217 S-04279—Rev. E, 16-Jul-01 VP0300L/LS, VQ2001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics –2.0 VGS = –10 V –9 V –1000 –8 V –800 ID – Drain Current (A) –1.2 –7 V –0.8 –6 V –0.4 –5 V ID – Drain Current (mA) 125_C –1.6 TJ = –55_C 25_C –600 –400 –200 –4 V 0 0 0 –1 –2 –3 –4 –5 0 –2 VDS – Drain-to-Source Voltage (V) –4 Capacitance –10 Gate Charge VGS – Gate-to-Source Voltage (V) VGS = 0 V f = 1 MHz 150 C – Capacitance (pF) –8 –18 175 125 100 75 Ciss 50 Coss 25 Crss –15 VDS = –15 V ID = –1 A –12 VDS = –24 V ID = –1 A –9 –6 –3 0 0 0 –5 –10 –15 –20 –25 0 –30 1000 2000 3000 4000 5000 Qg – Total Gate Charge (pC) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage –10 K 1.65 TJ = 150_C 1.50 TJ = 25_C –1 K IS – Source Current (A) rDS(on) – On-Resistance ( Ω ) (Normalized) –6 VGS – Gate-to-Source Voltage (V) VGS = –4.5 V ID = –0.5 A 1.35 1.20 VGS = –10 V ID = –0.1 A 1.05 –100 –10 0.90 0.75 –50 –1 –25 0 25 50 75 100 TJ – Junction Temperature (_C) Document Number: 70217 S-04279—Rev. E, 16-Jul-01 125 150 0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 VSD – Source-to-Drain Voltage (V) www.vishay.com 11-3 VP0300L/LS, VQ2001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region On-Resistance vs. Gate-to-Source Voltage –10 K 3.0 VDS = –10 V 2.5 TJ = 150_C –1 K ID – Drain Current (µA) rDS(on) – On-Resistance ( Ω ) ID = –0.5 A 2.0 ID = –0.2 A 1.5 100_C 25_C –100 –10 –55_C 1.0 –1 0 0 –4 –8 –12 –16 –1.0 –20 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 VGS – Gate-Source Voltage (V) VGS – Gate-to-Source Voltage (V) THERMAL RATINGS Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VP0300L Only) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 t1 – Square Wave Pulse Duration (sec) 1K 10 K DEVICE MARKINGS Front View: VP0300L “S” VP 0300L xxyy VP0300LS “S” VP 0300LS xxyy www.vishay.com 11-4 Top View: VQ2001J VQ2001J “S”f//xxyy VP0300LS “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code VQ2001P “S”f//xxyy Document Number: 70217 S-04279—Rev. E, 16-Jul-01