ONSEMI MMBT589LT1

MMBT589LT1
High Current Surface Mount
PNP Silicon Switching
Transistor for Load
Management in
Portable Applications
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30 VOLTS, 2.0 AMPS
PNP TRANSISTORS
Features
• Pb−Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−30
Vdc
Collector −Base Voltage
VCBO
−50
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−1.0
Adc
ICM
−2.0
A
Collector Current − Continuous
Collector Current − Peak
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
1
BASE
Symbol
Max
Unit
310
2.5
mW
mW/°C
403
°C/W
710
5.7
mW
mW/°C
176
°C/W
PD
RqJA
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
MARKING DIAGRAM
PD
RqJA
Total Device Dissipation (Ref. Figure 8)
(Single Pulse < 10 sec.)
PDsingle
Junction and Storage Temperature
TJ, Tstg
575
mW
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
G3 M G
G
1
G3 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT589LT1
SOT−23
3,000 / Tape & Reel
MMBT589LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 4
1
Publication Order Number:
MMBT589LT1/D
MMBT589LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−30
−
Vdc
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
−50
−
Vdc
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
ICBO
−
−0.1
mAdc
Collector−Emitter Cutoff Current
(VCES = −30 Vdc)
ICES
−
−0.1
mAdc
Emitter Cutoff Current
(VEB = −4.0 Vdc)
IEBO
−
−0.1
mAdc
100
100
80
40
−
300
−
−
−
−
−
−0.25
−0.30
−0.65
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
hFE
DC Current Gain (Note 3) (Figure 1)
(IC = −1.0 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = 2.0 A, VCE = −2.0 V)
−
Collector −Emitter Saturation Voltage (Note 3) (Figure 3)
(IC = −0.5 A, IB = −0.05 A)
(IC = −1.0 A, IB = 0.1 A)
(IC = −2.0 A, IB = −0.2 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3) (Figure 2)
(IC = −1.0 A, IB = −0.1 A)
VBE(sat)
−
−1.2
V
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
VBE(on)
−
−1.1
V
fT
100
−
MHz
Cobo
−
15
pF
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Output Capacitance
(f = 1.0 MHz)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
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2
V
MMBT589LT1
200
230
210
170
150
100
25°C
130
110
50
90
−55°C
70
0
0.01
0.001
0.1
1.0
50
10
Figure 2. DC Current Gain versus
Collector Current
1.0
VBE(sat) , BASE EMITTER SATURATION
VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1000
Figure 1. DC Current Gain versus
Collector Current
VBE(sat)
0.8
0.7
VBE(on)
0.6
0.5
0.4
0.3
0.2
0.1
VCE(sat)
1.0
100
10
1000
IC/IB = 100
0.7
0.65
0.6
0.55
0.5
VCE(sat) , COLLECTOR EMITTER SATURATION
VOLTAGE (VOLTS)
0.4
100 mA
50 mA
0.1
0.8
0.75
0.001
0.01
0.1
1.0
10
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1000 mA
0.01
IC/IB = 10
Figure 3. “On” Voltages
0.6
10 mA
0.9
0.85
IC, COLLECTOR CURRENT (AMPS)
0.8
0.2
0.95
IC, COLLECTOR CURRENT (mA)
1.0
0
100
IC, COLLECTOR CURRENT (mA)
0.9
0
10
1.0
IC, COLLECTOR CURRENT (AMPS)
1.0
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE = −1.0 V
125°C
190
150
h FE , DC CURRENT GAIN
h FE , DC CURRENT GAIN
VCE = −2.0 V
1.0
10
100
1000
1.8
1.6
IC/IB = 100
1.4
1.2
1.0
0.8
0.6
IC/IB = 10
0.4
0.2
0
0.001
0.01
0.1
1.0
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector Emitter Saturation Voltage
versus Collector Current
Figure 6. Collector Emitter Saturation Voltage
versus Collector Current
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3
10
MMBT589LT1
IC , COLLECTOR CURRENT (AMPS)
10
SINGLE PULSE TEST AT Tamb = 25°C
1s
1.0
10 ms
100 ms
1 ms
100 ms
2s
0.1
0.01
0.1
1.0
10
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
100
Figure 7. Safe Operating Area
0.5
0.2
0.1
1.0E+00
0.05
0.02
Rthja , (t)
1.0E−01
D = 0.01
1.0E−02
r(t)
1.0E−03
1E−05
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
Figure 8. Normalized Thermal Response
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4
10
100
1000
MMBT589LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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5
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MMBT589LT1/D