UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A ESD Rating − Machine Model: C These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant (6) (5) (4) Q2 Q1 (1) (2) (3) MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc 1 Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 7.0 Vdc SC−88 CASE 419B IC 200 mAdc Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C MARKING DIAGRAM Symbol Max Unit PD 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW mW/°C Thermal Resistance, Junction-to-Ambient RqJA 670 (Note 1) 490 (Note 2) °C/W Characteristic (Both Junctions Heated) Symbol Max Unit PD 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW Total Device Dissipation TA = 25°C Derate above 25°C mW/°C Thermal Resistance, Junction-to-Ambient RqJA 493 (Note 1) 325 (Note 2) °C/W Thermal Resistance, Junction-to-Lead RqJL 188 (Note 1) 208 (Note 2) °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature December, 2010 − Rev. 8 1 3Z = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 x 1.0 inch Pad © Semiconductor Components Industries, LLC, 2010 3Z M G G Device* UMZ1NT1G Package Shipping† SC−88 (Pb−Free) 3000 / Tape & Reel *The “T1” suffix refers to a 7 inch reel. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: UMZ1NT1/D UMZ1NT1G Q1: NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO 50 − − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 7.0 − − Vdc Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO − − 0.1 mAdc Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO − − − − − − 0.1 2.0 1.0 mAdc mAdc mAdc DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) 200 − 400 − VCE(sat) − − 0.25 Vdc fT − 114 − MHz Symbol Min Typ Max Unit Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO −50 − − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO −60 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO −7.0 − − Vdc Collector−Base Cutoff Current (VCB = 45 Vdc, IE = 0) ICBO − − −0.1 mAdc Collector−Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0, TA = 80°C) ICEO − − − − − − −0.1 −2.0 −1.0 mAdc mAdc mAdc DC Current Gain (Note 3) (VCE = 6.0 Vdc, IC = 2.0 mAdc) hFE Transistor Frequency 3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. Q2: PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Transistor Frequency http://onsemi.com 2 200 − 400 − VCE(sat) − − −0.3 Vdc fT − 142 − MHz UMZ1NT1G TYPICAL ELECTRICAL CHARACTERISTICS: PNP TRANSISTOR 1000 −1.5 mA −2.0 mA −160 −1.0 mA −120 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) −200 −0.5 mA −80 IB = −0.2 mA −40 0 TA = 25°C 0 −1 −2 −3 −4 −5 TA = 100°C 25°C 10 −6 VCE = −1.0 V −1 VCE, COLLECTOR−EMITTER VOLTAGE (V) −25°C 100 VCE = −6.0 V −100 −1000 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100°C −10 IC/IB = 10 TA = 100°C 25°C −25°C −0.1 −0.01 −1 −10 −100 −1000 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain Figure 4. VCE(sat) versus IC −10,000 −1 TA = 25°C IC/IB = 10 −10 −100 IB, BASE CURRENT (mA) −10 BASE−EMITTER SATURATION VOLTAGE (V) −1000 −1 IC, COLLECTOR CURRENT (mA) −0.1 −1 −100 Figure 2. DC Current Gain 1000 10 −1 −10 IC, COLLECTOR CURRENT (mA) Figure 1. Collector Saturation Region 25°C −25°C 100 −1000 TA = 100°C 25°C −25°C −100 −10 −1 −0.1 −1000 COMMON EMITTER VCE = 6 V 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 IC, COLLECTOR CURRENT (mA) VBE, BASE−EMITTER VOLTAGE (V) Figure 5. VBE(sat) versus IC Figure 6. Base−Emitter Voltage http://onsemi.com 3 −1 UMZ1NT1G TYPICAL ELECTRICAL CHARACTERISTICS: NPN TRANSISTOR 1000 6.0 mA 5.0 mA 240 2.0 mA 3.0 mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 280 200 1.0 mA 160 120 0.5 mA 80 IB = 0.2 mA 40 TA = 100°C 25°C −25°C 100 TA = 25°C 0 0 1 2 3 4 5 10 6 VCE = 1.0 V 1 10 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN TA = 100°C 25°C −25°C 100 VCE = 6.0 V 10 100 1000 VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) Figure 8. DC Current Gain 1000 1 1 IC/IB = 10 TA = 100°C 25°C 0.1 0.01 1 100 1000 IC, COLLECTOR CURRENT (mA) Figure 9. DC Current Gain Figure 10. VCE(sat) versus IC 10,000 IB, BASE CURRENT (mA) 10 BASE−EMITTER SATURATION VOLTAGE (V) −25°C 10 IC, COLLECTOR CURRENT (mA) 1 0.1 1000 IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Voltage 10 100 TA = 25°C IC/IB = 10 1 10 100 1000 TA = 100°C 25°C −25°C 100 10 1 0.1 1000 COMMON EMITTER VCE = 6 V 0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VBE, BASE−EMITTER VOLTAGE (V) Figure 11. VBE(sat) versus IC Figure 12. Base−Emitter Voltage http://onsemi.com 4 0.9 1 UMZ1NT1G PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative UMZ1NT1/D