MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • • • • • Extremely Low Minority Carrier Lifetime Very Low Capacitance − 1.0 pF @ 20 V Low Reverse Leakage − 200 nA (max) High Reverse Voltage − 70 V (min) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE 1 CATHODE MAXIMUM RATINGS Rating Reverse Voltage Symbol Value Unit VR 70 Vdc Symbol Max Unit 200 1.57 mW mW/°C 2 ANODE 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) @TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1 SOD−323 CASE 477 STYLE 1 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 Minimum Pad 5H M G G 5H = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMDL770T1G SOD−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 June, 2011 − Rev. 3 1 Publication Order Number: MMDL770T1/D MMDL770T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Diode Capacitance (VR = 20 V, f = 1.0 MHZ) CT Reverse Leakage (VR = 35 V) IR Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) VF Min Typ Max 70 − − − 0.5 1.0 − 9.0 200 − − 0.42 0.7 0.5 1.0 Unit V pF nAdc Vdc TYPICAL CHARACTERISTICS 2.0 500 t , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) MMBD770T1 f = 1.0 MHz 1.6 1.2 0.8 0.4 0 MMBD770T1 400 KRAKAUER METHOD 300 200 100 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 Figure 1. Total Capacitance 80 90 100 Figure 2. Minority Carrier Lifetime 10 100 MMBD770T1 MMBD770T1 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( m A) 30 50 70 40 60 IF, FORWARD CURRENT (mA) 20 TA = 100°C 1.0 TA = 75°C 0.1 10 TA = 85°C TA = -40°C 1.0 0.01 TA = 25°C TA = 25°C 0.1 0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 0.2 50 Figure 3. Reverse Leakage 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage http://onsemi.com 2 1.6 2.0 MMDL770T1G PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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