ONSEMI SBC846BDW1T1G

BC846BDW1T1G,
SBC846BDW1T1G,
BC847BDW1T1G,
SBC847BDW1T1G Series,
NSVBC847BDW1T2G,
BC848CDW1T1G
http://onsemi.com
Dual General Purpose
Transistors
SOT−363
CASE 419B
STYLE 1
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
(2)
Q1
• S and NSV Prefixes for Automotive and Other Applications
•
(3)
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Q2
(4)
(5)
6
Symbol
BC846
BC847
BC848
Unit
Collector −Emitter Voltage
VCEO
65
45
30
V
Collector −Base Voltage
VCBO
80
50
30
V
Emitter −Base Voltage
VEBO
6.0
6.0
5.0
V
IC
100
100
100
mAdc
Collector Current −
Continuous
(6)
MARKING DIAGRAM
MAXIMUM RATINGS
Rating
(1)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Characteristic
Symbol
Total Device Dissipation Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C
PD
Junction and Storage Temperature
Range
1
1x
x
M
G
= Specific Device Code
= B, F, G, L
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
THERMAL CHARACTERISTICS
Thermal Resistance,
Junction to Ambient
1x MG
G
RqJA
TJ, Tstg
Max
Unit
380
250
3.0
mW
mW/°C
mW/°C
°C/W
328
−55 to +150
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 9
1
Publication Order Number:
BC846BDW1T1/D
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CES
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846, SBC846 Series
BC847, SBC847 Series, NSVBC847
BC848 Series
V(BR)EBO
V
65
45
30
−
−
−
−
−
−
V
80
50
30
ICBO
−
−
−
V
80
50
30
Collector Cutoff Current
(VCB = 30 V)
(VCB = 30 V, TA = 150°C)
−
−
−
−
−
−
−
−
−
V
6.0
6.0
5.0
−
−
−
−
−
−
−
−
−
−
15
5.0
nA
mA
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B, NSVBC847
BC847C, SBC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, SBC846B, BC847B, SBC847B, NSVBC847
BC847C, SBC847C, BC848C
Collector −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
Base −Emitter Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
−
−
−
150
270
−
−
200
420
290
520
450
800
−
−
−
−
0.25
0.6
−
−
0.7
0.9
−
−
580
−
660
−
700
770
100
−
−
−
−
4.5
−
−
10
V
V
mV
SMALL−SIGNAL CHARACTERISTICS
fT
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
NF
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2
MHz
pF
dB
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC846BDW1T1G, SBC846BDW1T1G
600
600
VCE = 10 V
150°C
400
25°C
300
200
−55°C
100
0
0.001
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
500
0.25
0.01
0.1
500
150°C
400
25°C
300
200
−55°C
100
0
0.001
1
Figure 1. DC Current Gain at VCE = 5 V
Figure 2. DC Current Gain at VCE = 10 V
IC/IB = 10
0.15
150°C
0.10
25°C
0.05
−55°C
0.00
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
0.25
IC/IB = 20
0.2
0.15
25°C
0.1
0.05
0.80
25°C
0.70
0.60
150°C
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
−55°C
150°C
−55°C
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. VCE(sat) at IC/IB = 20
IC/IB = 10
0.90
1
0.3
Figure 3. VCE(sat) at IC/IB = 10
1.00
0.1
IC, COLLECTOR CURRENT (A)
0.20
1.10
0.01
IC, COLLECTOR CURRENT (A)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VCE = 5 V
1.10
1.00
IC/IB = 20
0.90
0.80
0.70
−55°C
25°C
0.60
0.50
0.40
150°C
0.30
0.20
0.0001
Figure 5. VBE(sat) at IC/IB = 10
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 6. VBE(sat) at IC/IB = 20
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3
0.1
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC846BDW1T1G, SBC846BDW1T1G
1000
VCE = 5 V
1.10
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.20
1.00
0.90
−55°C
0.80
25°C
0.70
0.60
150°C
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
0.1
1
10
100
Figure 7. VBE(on) at VCE = 5 V
Figure 8. Current − Gain − Bandwidth Product
2
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
Cib
C, CAPACITANCE (pF)
10
0.1
IC, COLLECTOR CURRENT (A)
TA = 25°C
Cob
1
10
100
1.6
TA = 25°C
IC =
10 mA
IC =
20 mA
IC =
50 mA
IC =
100 mA
1.2
0.8
0.4
0
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
IB, BASE CURRENT (mA)
Figure 9. Capacitances
Figure 10. Collector Saturation Region
qVB, TEMPERATURE COEFFICIENT
(mV/°C)
0.1
100
IC, COLLECTOR CURRENT (A)
10
1
VCE = 10 V
TA = 25°C
−0.2
VCE = 5 V
−0.6
−1
−1.4
qVB, for VBE
−1.8
−55°C to 150°C
−2.2
−2.6
−3
0.1
1
10
IB, BASE CURRENT (mA)
100
Figure 11. Base−Emitter Temperature Coefficient
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4
100
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC847BDW1T1G, SBC847BDW1T1G, NSVBC847BDW1T2G
400
25°C
300
−55°C
200
100
0.25
0.001
0.01
0.1
25°C
150°C
0.05
−55°C
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 14. VCE at IC/IB = 10
IC/IB = 10
1.00
−55°C
25°C
0.60
150°C
0.20
0.00
0.0001
−55°C
200
100
0.001
0.01
0.1
Figure 13. DC Current Gain at VCE = 10 V
0.10
0.40
25°C
300
Figure 12. DC Current Gain at VCE = 5 V
0.15
0.80
400
IC, COLLECTOR CURRENT (A)
0.20
1.20
150°C
500
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.00
0.0001
VCE = 10 V
0
0.0001
1
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
500
0
0.0001
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
600
VCE = 5 V
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
600
0.30
IC/IB = 20
0.25
0.20
0.15
25°C
0.10
0.05
150°C
−55°C
0.00
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
Figure 15. VCE at IC/IB = 20
1.20
IC/IB = 20
1.00
0.80
0.60
0.40
−55°C
25°C
150°C
0.20
0.00
0.0001
Figure 16. VBE(sat) at IC/IB = 10
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 17. VBE(sat) at IC/IB = 20
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5
1
0.1
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC847BDW1T1G, SBC847BDW1T1G, NSVBC847BDW1T2G
1.10
1000
VCE = 5 V
1.00
0.90
−55°C
0.80
0.70
100
25°C
0.60
0.50
150°C
0.40
0.30
0.20
0.0001
VCE = 10 V
TA = 25°C
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.20
0.001
0.01
IC, COLLECTOR CURRENT (A)
0.1
10
0.1
2
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
TA = 25°C
C, CAPACITANCE (pF)
Cob
1
100
Figure 19. Current − Gain − Bandwidth
Product
Cib
10
100
1.6
TA = 25°C
IC =
10 mA
1.2
IC =
20 mA
IC =
50 mA
IC =
100 mA
0.8
0.4
0
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
IB, BASE CURRENT (mA)
Figure 20. Capacitances
Figure 21. Collector Saturation Region
qVB, TEMPERATURE COEFFICIENT
(mV/°C)
1
0.1
10
IC, COLLECTOR CURRENT (A)
Figure 18. VBE(on) at VCE = 5 V
10
1
VCE = 5 V
−0.2
−0.6
−1
−1.4
qVB, for VBE
−55°C to 150°C
−1.8
−2.2
−2.6
−3
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature Coefficient
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6
100
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC848CDW1T1G, SBC848CDW1T1G
1000
800
700
600
25°C
500
400
−55°C
300
200
100
0.001
0.01
0.1
800
700
25°C
600
500
400
−55°C
300
200
0
0.0001
1
0.001
Figure 23. DC Current Gain at VCE = 5 V
Figure 24. DC Current Gain at VCE = 10 V
IC/IB = 10
0.14
0.12
0.10
150°C
0.08
25°C
0.06
0.04
−55°C
0.02
0.00
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
0.30
0.25
0.20
0.15
25°C
0.10
0.05
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
0.9
0.7
−55°C
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.0001
0.001
0.01
150°C
−55°C
0.00
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 26. VCE at IC/IB = 20
IC/IB = 10
0.8
1
IC/IB = 20
Figure 25. VCE at IC/IB = 10
1.0
0.1
IC, COLLECTOR CURRENT (A)
0.16
1.1
0.01
IC, COLLECTOR CURRENT (A)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
VCE(sat), COLL−EMITT SATURATION VOLTAGE (V)
0.18
VCE = 10 V
100
0
0.0001
0.20
150°C
900
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
VCE = 5 V
150°C
900
0.1
IC, COLLECTOR CURRENT (A)
1.2
IC/IB = 20
1.0
0.8
−55°C
25°C
0.6
0.4
150°C
0.2
0.0
0.0001
Figure 27. VBE(sat) at IC/IB = 10
0.001
0.01
IC, COLLECTOR CURRENT (A)
Figure 28. VBE(sat) at IC/IB = 20
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7
0.1
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
TYPICAL CHARACTERISTICS − BC848CDW1T1G, SBC848CDW1T1G
1000
VCE = 5 V
0.9
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT
VBE(on), BASE−EMITTER VOLTAGE
(V)
1.0
−55°C
0.8
25°C
0.7
0.6
0.5
0.4
150°C
0.3
0.2
0.1
0.0
0.0001
0.001
0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 30. Current − Gain − Bandwidth
Product
2
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
Cib
C, CAPACITANCE (pF)
10
0.1
IC, COLLECTOR CURRENT (A)
TA = 25°C
Cob
1
10
100
IC =
1.6 10 mA
TA = 25°C
IC =
20 mA
1.2
IC =
50 mA
IC =
100 mA
0.8
0.4
0
0.01
0.1
1
10
VR, REVERSE VOLTAGE (V)
IB, BASE CURRENT (mA)
Figure 31. Capacitances
Figure 32. Collector Saturation Region
qVB, TEMPERATURE COEFFICIENT
(mV/°C)
0.1
100
Figure 29. VBE(on) at VCE = 5 V
10
1
VCE = 10 V
TA = 25°C
VCE = 5 V
−0.2
−0.6
−1
−1.4
−1.8
qVB, for VBE
−55°C to 150°C
−2.2
−2.6
−3
0.1
1
10
IB, BASE CURRENT (mA)
100
Figure 33. Base−Emitter Temperature Coefficient
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8
100
BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
1.0
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
ZqJA(t) = r(t) RqJA
RqJA = 3285C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.001
0
1.0
10
100
t, TIME (ms)
1.0k
10k
100k
1.0M
Figure 34. Thermal Response
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 35 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk) ≤
150°C. T J(pk) may be calculated from the data in
Figure 34. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
-200
IC, COLLECTOR CURRENT (mA)
1s
3 ms
-100
-50
-10
-5.0
-2.0
-1.0
TA = 25°C
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 35. Active Region Safe Operating Area
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BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
ORDERING INFORMATION
Markings
Package
Shipping†
BC846BDW1T1G
1B
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC846BDW1T1G*
1B
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC847BDW1T1G
1F
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC847BDW1T1G*
1F
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC847BDW1T3G
1F
SOT−363
(Pb−Free)
10,000 / Tape & Reel
SBC847BDW1T3G*
1F
SOT−363
(Pb−Free)
10,000 / Tape & Reel
NSVBC847BDW1T2G*
1F
SOT−363
(Pb−Free)
10,000 / Tape & Reel
BC847CDW1T1G
1G
SOT−363
(Pb−Free)
3,000 / Tape & Reel
SBC847CDW1T1G*
1G
SOT−363
(Pb−Free)
3,000 / Tape & Reel
BC848CDW1T1G
1L
SOT−363
(Pb−Free)
3,000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
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BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series,
NSVBC847BDW1T2G, BC848CDW1T1G
PACKAGE DIMENSIONS
SC−88 (SC70−6/SOT−363)
CASE 419B−02
ISSUE W
D
e
6
5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
4
HE
−E−
1
2
3
b 6 PL
0.2 (0.008)
M
E
M
A3
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
DIM
A
A1
A3
b
C
D
E
e
L
HE
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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