2SA2125 / 2SC5964 Ordering number : EN7988A SANYO Semiconductors DATA SHEET 2SA2125/2SC5964 PNP / NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features • • • Adoption of MBIT process Low collector-to-emitter saturation voltage Halogen free compliance Specifications ( • • Large current capacity High-speed switching ) : 2SA2125 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Conditions Ratings Unit VCBO VCES (-50)100 V (-50)100 V VCEO (--)50 V VEBO (--)6 V Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 1 2 0.4 Packing Type: TD 4.0 1.0 2.5 1.5 2SA2125-TD-E 2SA2125-TD-H 2SC5964-TD-E 2SC5964-TD-H TD Marking 3 3.0 2SA2125 0.75 2SC5964 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View LOT No. AY 1.5 HA 0.5 LOT No. 0.4 SANYO : PCP 2 1 1 3 3 2SA2125 2SC5964 http://www.sanyosemi.com/en/network/ 91912 TKIM/N3004 TSIM TB-00000265 No.7988-1/8 2SA2125 / 2SC5964 Continued from preceding page. Parameter Symbol Collector Current Collector Current (Pulse) IC ICP Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Unit (--)3 (--)6 A A (--)600 mA When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product VCE=(--)2V, IC=(--)100mA VCE(sat)2 Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time typ 200 VCE=(--)10V, IC=(--)500mA VCE(sat)1 Collector-to-Emitter Saturation Voltage Ratings min VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A fT Cob Output Capacitance Conditions max (--)1 μA (--)1 μA 560 (390)380 VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA MHz (24)13 IC=(--)2A, IB=(--)100mA IC=(--)2A, IB=(--)100mA Unit pF (--125)100 (--230)150 mV (--250)190 (--500)290 mV (--)0.94 (--)1.2 VBE(sat) V(BR)CBO IC=(--)10μA, IE=0A (--50)100 V V(BR)CES V(BR)CEO IC=(--)100μA, RBE=0Ω IC=(--)1mA, RBE=∞ (--50)100 V (--)50 V V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. (--)6 V V (30)35 ns (230)300 ns (18)25 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=25V IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. Ordering Information Package Shipping memo 2SA2125-TD-E Device PCP 1,000pcs./reel Pb Free 2SA2125-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free 2SC5964-TD-E PCP 1,000pcs./reel Pb Free 2SC5964-TD-H PCP 1,000pcs./reel Pb Free and Halogen Free No.7988-2/8 2SA2125 / 2SC5964 IC -- VCE 2SA2125 mA --250 mA mA --150 mA --100 --200 --4.0 --3.5 A --2.5 --20mA --2.0 --10mA --1.5 --5mA 4.0 40mA 3.5 3.0 20mA 2.5 10mA 2.0 5mA 1.5 1.0 --0.5 0.5 IB=0mA 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Collector-to-Emitter Voltage, VCE -- V 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Collector-to-Emitter Voltage, VCE -- V 2.0 IT07259 IC -- VBE 3.0 2SC5964 VCE=2V 2SA2125 VCE= --2V --2.5 --1.5 --0.5 0 0 --0.2 --0.4 --0.6 --25° C Ta= 7 5°C 25°C --1.0 --0.8 --1.0 1.0 0 0 --1.2 0.2 0.4 2SA2125 VCE= --2V DC Current Gain, hFE Ta=75°C --25°C 2 100 1.0 1.2 IT07261 2SC5964 VCE=2V 7 25°C 0.8 hFE -- IC 1000 7 0.6 Base-to-Emitter Voltage, VBE -- V IT07260 hFE -- IC 3 1.5 0.5 Base-to-Emitter Voltage, VBE -- V 1000 2.0 --25°C Collector Current, IC -- A 2.5 --2.0 5 0.2 IT07258 IC -- VBE --3.0 IB=0mA 0 --2.0 °C 25°C 0 Collector Current, IC -- A 80mA 60mA --1.0 DC Current Gain, hFE 100m 4.5 --50m --3.0 A 2SC5964 Ta=7 5 Collector Current, IC -- A --4.5 IC -- VCE 5.0 Collector Current, IC -- A --5.0 Ta=75°C 25°C 5 --25°C 3 2 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 2SA2125 VCE= --10V 5 3 2 100 7 5 2 3 5 7 --0.1 2 3 2 3 5 7 0.1 5 7 --1.0 Collector Current, IC -- A 2 3 5 IT07264 2 3 5 7 1.0 2 Collector Current, IC -- A IT07262 3 5 IT07263 f T -- IC 1000 7 3 --0.01 7 0.01 5 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 3 Gain-Bandwidth Product, f T -- MHz 3 --0.01 100 2SC5964 VCE=10V 7 5 3 2 100 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT07265 No.7988-3/8 2SA2125 / 2SC5964 Cob -- VCB 100 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 7 5 3 2 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 VCE(sat) -- IC 3 2 --0.1 °C 75 = Ta 5 3 °C 25 5°C --2 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 5 3 2 C 75° Ta= 7 5 °C 25 °C --25 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 7 75°C 25°C 5 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 3 2 3 2 5 IT07272 3 5 7 100 IT07267 2 0.1 7 5 °C 75 = Ta 3 2 25 °C C 5° --2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 IT07269 VCE(sat) -- IC 2SC5964 IC / IB=50 3 2 0.1 °C 75 7 5 = Ta 3 5°C --2 2 2 3 5 7 0.1 2 3 °C 25 5 7 1.0 2 Collector Current, IC -- A 3 5 IT07271 VBE(sat) -- IC 3 2 Ta= --25°C 5 7 10 VCE(sat) -- IC IT07270 2SA2125 IC / IB=20 --1.0 3 2SC5964 IC / IB=20 0.01 0.01 5 VBE(sat) -- IC 3 2 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 --0.1 5 7 1.0 5 --2 2 5°C 5°C 75 °C --1.0 --0.01 --0.01 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 3 7 2SA2125 IC / IB=50 5 2 IT07268 Ta= Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 2 7 5 0.01 VCE(sat) -- IC 3 3 5 2SA2125 IC / IB=20 7 5 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 7 IT07266 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 2SC5964 f=1MHz 10 0.1 5 7 --100 Collector-to-Base Voltage, VCB -- V Cob -- VCB 100 2SA2125 f=1MHz 2SC5964 IC / IB=20 2 1.0 Ta= --25°C 7 5 3 0.01 75°C 25°C 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT07273 No.7988-4/8 2SA2125 / 2SC5964 ASO ICP=6A IC=3A s 2 ms 0m DC s 0μ 1.0 7 5 50 s op era tio n 3 2 0.1 7 5 2SA2125 / 2SC5964 Tc=25°C Single Pulse (For PNP, minus sign is omitted.) 3 2 0.01 0.1 2 3 5 7 1.0 2 3 M 1.2 s 0μ 10 10 2SA2125 / 2SC5964 1.3 10 3 Collector Current, IC -- A 1m PC -- Ta 1.4 <10μs Collector Dissipation, PC -- W 10 7 5 ou nt 1.0 ed on ac er am ic 0.8 bo ar 0.6 d (2 50 m m2 ✕ 0. 0.4 8m m ) 0.2 0 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT07274 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07275 PC -- Tc 4.0 2SA2125 / 2SC5964 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT07276 No.7988-5/8 2SA2125 / 2SC5964 Embossed Taping Specification 2SA2125-TD-E, 2SA2125-TD-H, 2SC5964-TD-E, 2SC5964-TD-H No.7988-6/8 2SA2125 / 2SC5964 Outline Drawing Land Pattern Example 2SA2125-TD-E, 2SA2125-TD-H, 2SC5964-TD-E, 2SC5964-TD-H Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.7988-7/8 2SA2125 / 2SC5964 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No.7988-8/8