SANYO 2SA2125_12

2SA2125 / 2SC5964
Ordering number : EN7988A
SANYO Semiconductors
DATA SHEET
2SA2125/2SC5964
PNP / NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Applicaitons
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, flash
Features
•
•
•
Adoption of MBIT process
Low collector-to-emitter saturation voltage
Halogen free compliance
Specifications (
•
•
Large current capacity
High-speed switching
) : 2SA2125
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCES
(-50)100
V
(-50)100
V
VCEO
(--)50
V
VEBO
(--)6
V
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Top View
4.5
1.6
1
2
0.4
Packing Type: TD
4.0
1.0
2.5
1.5
2SA2125-TD-E
2SA2125-TD-H
2SC5964-TD-E
2SC5964-TD-H
TD
Marking
3
3.0
2SA2125
0.75
2SC5964
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
LOT No.
AY
1.5
HA
0.5
LOT No.
0.4
SANYO : PCP
2
1
1
3
3
2SA2125
2SC5964
http://www.sanyosemi.com/en/network/
91912 TKIM/N3004 TSIM TB-00000265 No.7988-1/8
2SA2125 / 2SC5964
Continued from preceding page.
Parameter
Symbol
Collector Current
Collector Current (Pulse)
IC
ICP
Base Current
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
Ratings
Unit
(--)3
(--)6
A
A
(--)600
mA
When mounted on ceramic substrate (250mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
VCE=(--)2V, IC=(--)100mA
VCE(sat)2
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
typ
200
VCE=(--)10V, IC=(--)500mA
VCE(sat)1
Collector-to-Emitter Saturation Voltage
Ratings
min
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
fT
Cob
Output Capacitance
Conditions
max
(--)1
μA
(--)1
μA
560
(390)380
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)50mA
MHz
(24)13
IC=(--)2A, IB=(--)100mA
IC=(--)2A, IB=(--)100mA
Unit
pF
(--125)100
(--230)150
mV
(--250)190
(--500)290
mV
(--)0.94
(--)1.2
VBE(sat)
V(BR)CBO
IC=(--)10μA, IE=0A
(--50)100
V
V(BR)CES
V(BR)CEO
IC=(--)100μA, RBE=0Ω
IC=(--)1mA, RBE=∞
(--50)100
V
(--)50
V
V(BR)EBO
ton
IE=(--)10μA, IC=0A
tstg
tf
See specified Test Circuit.
(--)6
V
V
(30)35
ns
(230)300
ns
(18)25
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
OUTPUT
IB2
INPUT
VR
RB
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=25V
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
Ordering Information
Package
Shipping
memo
2SA2125-TD-E
Device
PCP
1,000pcs./reel
Pb Free
2SA2125-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
2SC5964-TD-E
PCP
1,000pcs./reel
Pb Free
2SC5964-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
No.7988-2/8
2SA2125 / 2SC5964
IC -- VCE
2SA2125
mA
--250
mA
mA
--150
mA
--100
--200
--4.0
--3.5
A
--2.5
--20mA
--2.0
--10mA
--1.5
--5mA
4.0
40mA
3.5
3.0
20mA
2.5
10mA
2.0
5mA
1.5
1.0
--0.5
0.5
IB=0mA
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
Collector-to-Emitter Voltage, VCE -- V
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Collector-to-Emitter Voltage, VCE -- V
2.0
IT07259
IC -- VBE
3.0
2SC5964
VCE=2V
2SA2125
VCE= --2V
--2.5
--1.5
--0.5
0
0
--0.2
--0.4
--0.6
--25°
C
Ta=
7
5°C
25°C
--1.0
--0.8
--1.0
1.0
0
0
--1.2
0.2
0.4
2SA2125
VCE= --2V
DC Current Gain, hFE
Ta=75°C
--25°C
2
100
1.0
1.2
IT07261
2SC5964
VCE=2V
7
25°C
0.8
hFE -- IC
1000
7
0.6
Base-to-Emitter Voltage, VBE -- V
IT07260
hFE -- IC
3
1.5
0.5
Base-to-Emitter Voltage, VBE -- V
1000
2.0
--25°C
Collector Current, IC -- A
2.5
--2.0
5
0.2
IT07258
IC -- VBE
--3.0
IB=0mA
0
--2.0
°C
25°C
0
Collector Current, IC -- A
80mA
60mA
--1.0
DC Current Gain, hFE
100m
4.5
--50m
--3.0
A
2SC5964
Ta=7
5
Collector Current, IC -- A
--4.5
IC -- VCE
5.0
Collector Current, IC -- A
--5.0
Ta=75°C
25°C
5
--25°C
3
2
7
5
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
2SA2125
VCE= --10V
5
3
2
100
7
5
2
3
5
7 --0.1
2
3
2
3
5
7 0.1
5
7 --1.0
Collector Current, IC -- A
2
3
5
IT07264
2
3
5
7 1.0
2
Collector Current, IC -- A
IT07262
3
5
IT07263
f T -- IC
1000
7
3
--0.01
7
0.01
5
f T -- IC
1000
Gain-Bandwidth Product, f T -- MHz
3
Gain-Bandwidth Product, f T -- MHz
3
--0.01
100
2SC5964
VCE=10V
7
5
3
2
100
7
5
3
2
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
IT07265
No.7988-3/8
2SA2125 / 2SC5964
Cob -- VCB
100
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
7
5
3
2
10
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
VCE(sat) -- IC
3
2
--0.1
°C
75
=
Ta
5
3
°C
25
5°C
--2
2
--0.01
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
5
3
2
C
75°
Ta=
7
5
°C
25
°C
--25
3
2
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
3
7
75°C
25°C
5
3
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
3
2
3
2
5
IT07272
3
5 7 100
IT07267
2
0.1
7
5
°C
75
=
Ta
3
2
25
°C
C
5°
--2
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
IT07269
VCE(sat) -- IC
2SC5964
IC / IB=50
3
2
0.1
°C
75
7
5
=
Ta
3
5°C
--2
2
2
3
5
7 0.1
2
3
°C
25
5
7 1.0
2
Collector Current, IC -- A
3
5
IT07271
VBE(sat) -- IC
3
2
Ta= --25°C
5 7 10
VCE(sat) -- IC
IT07270
2SA2125
IC / IB=20
--1.0
3
2SC5964
IC / IB=20
0.01
0.01
5
VBE(sat) -- IC
3
2
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
--0.1
5 7 1.0
5
--2
2
5°C 5°C
75
°C
--1.0
--0.01
--0.01
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
3
7
2SA2125
IC / IB=50
5
2
IT07268
Ta=
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
2
7
5
0.01
VCE(sat) -- IC
3
3
5
2SA2125
IC / IB=20
7
5
Collector-to-Base Voltage, VCB -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
7
IT07266
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
7
2SC5964
f=1MHz
10
0.1
5 7 --100
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
100
2SA2125
f=1MHz
2SC5964
IC / IB=20
2
1.0
Ta= --25°C
7
5
3
0.01
75°C
25°C
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
IT07273
No.7988-4/8
2SA2125 / 2SC5964
ASO
ICP=6A
IC=3A
s
2
ms
0m
DC
s
0μ
1.0
7
5
50
s
op
era
tio
n
3
2
0.1
7
5
2SA2125 / 2SC5964
Tc=25°C
Single Pulse
(For PNP, minus sign is omitted.)
3
2
0.01
0.1
2
3
5
7 1.0
2
3
M
1.2
s
0μ
10
10
2SA2125 / 2SC5964
1.3
10
3
Collector Current, IC -- A
1m
PC -- Ta
1.4
<10μs
Collector Dissipation, PC -- W
10
7
5
ou
nt
1.0
ed
on
ac
er
am
ic
0.8
bo
ar
0.6
d
(2
50
m
m2
✕
0.
0.4
8m
m
)
0.2
0
5
7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
5
7
IT07274
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07275
PC -- Tc
4.0
2SA2125 / 2SC5964
Collector Dissipation, PC -- W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT07276
No.7988-5/8
2SA2125 / 2SC5964
Embossed Taping Specification
2SA2125-TD-E, 2SA2125-TD-H, 2SC5964-TD-E, 2SC5964-TD-H
No.7988-6/8
2SA2125 / 2SC5964
Outline Drawing
Land Pattern Example
2SA2125-TD-E, 2SA2125-TD-H, 2SC5964-TD-E, 2SC5964-TD-H
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.7988-7/8
2SA2125 / 2SC5964
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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This catalog provides information as of September, 2012. Specifications and information herein are subject
to change without notice.
PS No.7988-8/8