ONSEMI SFT1202-TL-E

SFT1202
Ordering number : ENA1169A
SANYO Semiconductors
DATA SHEET
SFT1202
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
•
•
•
Adoption of FBET, MBIT process
Low collector-to-emitter saturation voltage
High allowable power dissipation
Large current capacity
High-speed switching
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCES
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
VCEO
VEBO
IC
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
ICP
IB
Base Current
Unit
180
V
180
V
150
V
7
V
2
A
3
400
A
mA
Continued on next page.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7518-003
7003-003
5.5
0.85
0.7
0.5
0.6
1
2
2.3
0.5
3
2.3
2.5
0.8
1
7.5
0.8
1.6
0.85
1.2
2
3
0 to 0.2
0.6
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SFT1202-TL-E
0.5
1.2
4
7.0
5.5
4
2.3
6.5
5.0
SFT1202-E
1.5
1.5
0.5
7.0
2.3
6.5
5.0
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
SANYO : TP
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
T1202
1
LOT No.
TL
3
http://www.sanyosemi.com/en/network/
80812 TKIM/73008EA TIIM TC-00001478 No. A1169-1/9
SFT1202
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
1
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
W
15
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
VCE=5V, IC=100mA
typ
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
Unit
max
200
VCE=10V, IC=300mA
tstg
tf
Fall Time
Ratings
min
VCB=80V, IE=0A
VEB=4V, IC=0A
fT
Cob
Output Capacitance
Conditions
1
μA
1
μA
560
140
MHz
VCB=10V, f=1MHz
IC=1A, IB=100mA
12
110
165
mV
pF
IC=0.5A, IB=50mA
IC=1A, IB=100mA
65
100
mV
0.85
1.2
V
IC=10μA, IE=0A
180
V
IC=100μA, RBE=0Ω
180
V
IC=1mA, RBE=∞
IE=10μA, IC=0A
150
V
7
V
50
See specified Test Circuit.
ns
1460
ns
70
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
RB
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=75V
IC=10IB1= --10IB2=0.5A
Ordering Information
Device
SFT1202-E
SFT1202-TL-E
Package
Shipping
TP
500pcs./bag
TP-FA
700pcs./reel
memo
Pb Free
No. A1169-2/9
SFT1202
IC -- VCE
A
0m
200
mA
250
mA
16
1
Collector Current, IC -- A
60mA
40mA
1.0
20mA
10mA
5mA
0.5
IB=0mA
0
0
0.1
0.2
0.3
0.4
A
20m
1
1.0
10mA
5mA
2mA
1mA
0.5
IB=0mA
0
DC Current Gain, hFE
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- A
1.0
VCE=5V
3
2
Ta=75°C
25°C
--25°C
100
7
5
2
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
10
0.01
1.2
2
3
5
7 0.1
2
3
5
7 1.0
5
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, fT -- MHz
5
f=1MHz
VCE=10V
100
7
5
3
2
10
0.01
2
3
5
7
2
0.1
3
5
Collector Current, IC -- A
3
2
10
7
5
3
0.1
7
1.0
IT13546
2
3
5
7 1.0
2
3
5
7 10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
0.1
7
5
°C
25
C
Ta=75°
--25°C
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
5 7 100
IT13547
IC / IB=10
IC / IB=10
2
3
VBE(sat) -- IC
2
3
3
2
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
IT13545
Cob -- VCB
7
2
0.01
0.01
2
Collector Current, IC -- A
IT13544
fT -- IC
3
5
IT13543
3
0
0.6
4
7
1.5
0.4
3
hFE -- IC
1000
5
0.2
2
Collector-to-Emitter Voltage, VCE -- V
2.0
0
1
IT13542
VCE=5V
0.5
20mA
mA
200
0
IC -- VBE
2.5
60mA
40mA
1.5
0.5
Collector-to-Emitter Voltage, VCE -- V
80mA
100mA
100mA 80mA
mA
1.5
IC -- VCE
2.0
20mA
500
Collector Current, IC -- A
2.0
3
IT13548
1.0
Ta= --25°C
7
5
25°C
75°C
3
2
0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
3
IT13549
No. A1169-3/9
SFT1202
ASO
3
10
2
0m
s
Collector Current, IC -- A
μs
μs 500
100
s
0m
n
s1
tio
era
3
1.0
7
5
op
0.1
7
5
1m
n
tio
2
IC=2A
DC
s
era
μs
μs 500
0m
op
3
<10μs
ICP=3A
3
2.5
2
100
10
DC
IC=2A
1.0
7
5
s
1m s
m
10
3
2.5
2
ASO
5
<10μs
ICP=3A
Collector Current, IC -- A
5
0.1
7
5
3
2
2
Ta=25°C
Single pulse
0.01
0.01 2 3 5 7 0.1
2 3 5 7 1.0
2 3 5 7 10
Tc=25°C
Single pulse
0.01
0.01 2 3 5 7 0.1
2 3 5 7100 2 3
IT13555
Collector-to-Emitter Voltage, VCE -- V
PC -- Ta
1.2
2 3 5 7 1.0
2 3 5 7 10
2 3 5 7100 2 3
IT13556
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
16
15
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
14
1.0
0.8
0.6
0.4
0.2
12
10
8
6
4
2
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13553
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT13554
No. A1169-4/9
SFT1202
Taping Specification
SFT1202-TL-E
No. A1169-5/9
SFT1202
Outline Drawing
SFT1202-TL-E
Land Pattern Example
Mass (g) Unit
0.282 mm
Unit: mm
* For reference
7.0
7.0
2.5
2.0
1.5
2.3
2.3
No. A1169-6/9
SFT1202
Bag Packing Specification
SFT1202-E
No. A1169-7/9
SFT1202
Outline Drawing
SFT1202-E
Mass (g) Unit
0.315 mm
* For reference
No. A1169-8/9
SFT1202
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of August, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1169-9/9