50A02CH Ordering number : EN7487B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 50A02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive, muting circuit Features • • • • High collector current capability Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA] Low ON-resistance (Ron) Halogen free conpliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg --50 V --50 V --5 --500 --1.0 A 700 mW When mounted on ceramic substrate (600mm2×0.8mm) 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7015A-003 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 0.6 2.9 50A02CH-TL-E 50A02CH-TL-H 0.15 Packing Type: TL Marking 0.05 LOT No. 0.2 AX 3 1.6 2.8 V mA 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector Electrical Connection 3 SANYO : CPH3 1 2 http://semicon.sanyo.com/en/network 70412 TKIM/72110EA TKIM TC-00002407/O3103 TSIM TA-100637 No.7487-1/7 50A02CH Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Conditions Ratings min typ max Unit ICBO IEBO hFE VCB= --40V, IE=0A VEB= --4V, IC=0A VCE= --2V, IC= --10mA fT Cob VCE= --10V, IC= --50mA VCB= --10V, f=1MHz 690 VCE(sat) VBE(sat) IC= --100mA, IB= --10mA IC= --100mA, IB= --10mA --60 --120 --0.9 --1.2 V(BR)CBO V(BR)CEO IC= --10μA, IE=0A IC= --1mA, RBE=∞ --50 --50 V V(BR)EBO ton IE= --10μA, IC=0A --5 V tstg tf See specified Test Circuit. 200 --100 nA --100 nA 500 MHz 3.8 pF mV V V 30 ns 170 ns 30 ns Switching Time Test Circuit IB1 PW=20μs D.C. ≤1% INPUT OUTPUT IB2 VR 50Ω RB RL + + 220μF 470μF VBE=5V VCC= --25V IC=20IB1= --20IB2= --200mA Ordering Information Package Shipping memo 50A02CH-TL-E Device CPH3 3,000pcs./reel Pb Free 50A02CH-TL-H CPH3 3,000pcs./reel Pb Free and Halogen Free No.7487-2/7 50A02CH IC -- VCE VCE= --2V A A --10m --5mA --300 --250 --2mA --200 --1mA --150 --500μA --100 --500 --400 --300 Ta=75 °C 25°C --25°C --350 --15m A Collector Current, IC -- mA --400 IC -- VBE --600 --50m --450 --40 m A A A mA 0m -25m --20 --3 - Collector Current, IC -- mA --500 --200 --200μA --100 IB=0μA 0 --50 0 0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV 0 VCE= --2V DC Current Gain, hFE 3 100 7 5 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 7 5 75 = Ta C 25° 3 2 3 5 C 5° 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA IC / IB=20 5 7 IT05410 VCE(sat) -- IC IC / IB=50 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 °C --2 2 3 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1.2 IT05119 2 --10 --1.0 5 7--1000 IT05120 VCE(sat) -- IC --1000 --1.0 --100 2 3 --1.0 --0.8 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Ta=75°C 25°C --25°C --0.6 VCE(sat) -- IC 3 7 5 --0.4 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 --0.2 IT05118 --1000 3 2 --100 7 C 75° Ta= 5 3 °C 25°C 2 --10 7 --1.0 5 --2 2 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA 5 3 2 --100 75°C Ta= °C --25 7 5 3 25°C 2 --10 --1.0 5 7--1000 IT05123 2 3 5 7 --10 2 3 5 7 --100 2 3 Cob -- VCB 10 Ta= --25°C 7 75°C 25°C 5 3 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA f=1MHz Output Capacitance, Cob -- pF Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=20 --1.0 2 3 5 7--1000 IT05125 5 7--1000 IT05124 Collector Current, IC -- mA VBE(sat) -- IC 2 7 7 5 3 2 1.0 --1.0 2 3 5 7 --10 2 5 3 Collector-to-Base Voltage, VCB -- V 7 --100 IT05122 No.7487-3/7 50A02CH f T -- IC 7 Ron -- IB 1kΩ f=1MHz 5 3 2 OUT IN 1kΩ 3 2 IB 10 7 5 3 2 1.0 7 5 3 2 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05121 Collector Current, IC -- mA PC -- Ta 800 Collector Dissipation, PC -- mW 100 7 5 VCE= --10V ON Resistance, Ron -- Ω Gain-Bandwidth Product, f T -- MHz 1000 700 0.1 --0.1 2 3 5 7 --1.0 2 Base Current, IB -- mA 3 5 7 --10 IT06093 M ou nt 600 500 ed on ac er am ic 400 bo ar d (6 00 300 m m2 ✕ 0. 200 8m 100 m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05047 No.7487-4/7 50A02CH Embossed Taping Specification 50A02CH-TL-E, 50A02CH-TL-H No.7487-5/7 50A02CH Outline Drawing 50A02CH-TL-E, 50A02CH-TL-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.7487-6/7 50A02CH Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. PS No.7487-7/7