STMICROELECTRONICS STD11NM50N

STD11NM50N
STF11NM50N, STP11NM50N
N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP and TO-220
Features
Order codes
VDSS @TJmax
RDS(on)
max
ID
3
1
STD11NM50N
STF11NM50N
STP11NM50N
3
550 V
< 0.47 Ω
8.5 A
DPAK
1
2
TO-220
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
3
1
2
TO-220FP
Application
Switching applications
Figure 1.
Internal schematic diagram
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
$
'
3
!-V
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD11NM50N
11NM50N
DPAK
Tape and reel
STF11NM50N
11NM50N
TO-220FP
Tube
STP11NM50N
11NM50N
TO-220
Tube
November 2010
Doc ID 17156 Rev 3
1/16
www.st.com
16
Contents
STD11NM50N, STF11NM50N, STP11NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
.............................................. 9
Doc ID 17156 Rev 3
STD11NM50N, STF11NM50N, STP11NM50N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
DPAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
500
V
VGS
Gate-source voltage
± 25
V
ID
ID
IDM
(2)
PTOT
dv/dt (3)
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
(1)
6
34
34(1)
A
25
W
70
Peak diode recovery voltage slope
15
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
A
6
70
VISO
Tj
8.5 (1)
8.5
A
V/ns
2500
V
- 55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 8.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS,VDD = 80% V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Rthj-pcb
Thermal resistance junction-pcb max(1)
Tl
Maximum lead temperature for soldering
purpose
DPAK
1.79
62.5
TO-220FP
5
°C/W
62.5
°C/W
50
300
°C/W
300
°C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
Thermal data
Symbol
Parameter
IAR
Avalanche current, repetetive or not
EAS
Single pulse avalanche energy (2)
repetetive(1)
Value
Unit
3
A
150
mJ
1. Pulse width limited by TJMAX.
2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Doc ID 17156 Rev 3
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Electrical characteristics
2
STD11NM50N, STF11NM50N, STP11NM50N
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
500
V
IDSS
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
100
nA
3
4
V
0.4
0.47
Ω
Min.
Typ.
Max.
Unit
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Table 6.
Symbol
2
VGS = 10 V, ID = 4.5 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
547
42
2
-
pF
pF
pF
Output equivalent
capacitance
VDS = 0 to 400 V, VGS = 0
-
210
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
5.8
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 8.5 A,
VGS = 10 V
(see Figure 18)
-
19
3.7
10
-
nC
nC
nC
Ciss
Coss
Crss
Coss eq.(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
4/16
Doc ID 17156 Rev 3
STD11NM50N, STF11NM50N, STP11NM50N
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 250 V, ID = 4.25 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Min.
Typ.
-
8
10
33
10
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Electrical characteristics
Test conditions
Max. Unit
-
8.5
34
A
A
ISD = 8.5 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8.5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 22)
-
230
2.1
18
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
-
275
2.5
18
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17156 Rev 3
5/16
Electrical characteristics
STD11NM50N, STF11NM50N, STP11NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Thermal impedance for DPAK
!-V
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,I PER
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D NI
BY N
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AX SA
2 RE
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IS
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3
ON
—S
—S
MS
MS
4J #
4C #
3INGLE
PULSE
Figure 4.
Safe operating area for TO-220FP
!-V
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ON
IS
—S
$
3
/
,I PER
M AT
ITE IO
D NI
BY N
M THI
AX SA
2 RE
A
6$36
—S
MS
MS
4J #
4C #
3INGLE
PULSE
Figure 6.
Safe operating area for DPAK
!-V
ON
—S
$
3
/
,I PER
M AT
ITE IO
D NI
BY N
M THI
AX SA
2 RE
A
IS
)$
!
6$36
—S
MS
MS
4J #
4C #
3INGLE
PULSE
6/16
6$36
Doc ID 17156 Rev 3
STD11NM50N, STF11NM50N, STP11NM50N
Figure 8.
Electrical characteristics
Output characteristics
Figure 9.
Transfer characteristics
!-V
)$ !
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)$ !
6'36
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6
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6'36
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
!-V
6'3
6
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6$$6
)$!
/HM
6'36
!-V
2$3ON
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Figure 12. Capacitance variations
)$!
Figure 13. Output capacitance stored energy
!-V
#
P&
!-V
%OSS
—*
#ISS
#OSS
#RSS
6$36
Doc ID 17156 Rev 3
6$36
7/16
Electrical characteristics
STD11NM50N, STF11NM50N, STP11NM50N
Figure 14. Normalized gate threshold voltage
vs temperature
!-V
6'3TH
NORM
Figure 15. Normalized on resistance vs
temperature
NORM
)$—!
4* #
Figure 16. Normalized BVDSS vs temperature
!-V
"6$33
NORM
)$M!
8/16
!-V
2$3ON
4* #
Doc ID 17156 Rev 3
)$!
4* #
STD11NM50N, STF11NM50N, STP11NM50N
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 21. Unclamped inductive waveform
AM01471v1
Figure 22. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 17156 Rev 3
10%
AM01473v1
9/16
Package mechanical data
4
STD11NM50N, STF11NM50N, STP11NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/16
Doc ID 17156 Rev 3
STD11NM50N, STF11NM50N, STP11NM50N
Table 9.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Figure 23. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 17156 Rev 3
11/16
Package mechanical data
STD11NM50N, STF11NM50N, STP11NM50N
TO-252 (DPAK) mechanical data
DIM.
mm.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
L4
0.80
0.60
1
R
V2
0.20
8o
0o
0068772_G
12/16
Doc ID 17156 Rev 3
STD11NM50N, STF11NM50N, STP11NM50N
Package mechanical data
TO-220 type A mechanical data
mm
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.48
15.25
Max
4.60
0.88
1.70
0.70
15.75
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.75
2.65
3.85
2.95
0015988_Rev_S
Doc ID 17156 Rev 3
13/16
Packaging mechanical data
5
STD11NM50N, STF11NM50N, STP11NM50N
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
14/16
inch
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
D
1.5
D1
1.5
E
1.65
1.85
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.153 0.161
0.059
0.065 0.073
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
1.574
16.3
0.618
0.641
Doc ID 17156 Rev 3
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
0.059
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STD11NM50N, STF11NM50N, STP11NM50N
6
Revision history
Revision history
Table 10.
Document revision history
Date
Revision
Changes
22-Feb-2010
1
First release.
26-Apr-2010
2
Updated Table 8: Source drain diode.
24-Nov-2010
3
New value inserted in Table 6: Dynamic.
Doc ID 17156 Rev 3
15/16
STD11NM50N, STF11NM50N, STP11NM50N
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Doc ID 17156 Rev 3