STMICROELECTRONICS STF34NM60N

STF34NM60N
STP34NM60N, STW34NM60N
N-channel 600 V, 0.092 Ω, 29 A MDmesh™ II Power MOSFET
TO-220, TO-247, TO-220FP
Features
Type
STF34NM60N
STP34NM60N
STW34NM60N
VDSS
RDS(on)
max.
ID
PTOT
600 V
600 V
600 V
0.105 Ω
0.105 Ω
0.105 Ω
29 A
29 A
29 A
40 W
210 W
210 W
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
2
3
3
1
1
TO-247
2
TO-220
3
1
2
TO-220FP
Application
Switching applications
Figure 1.
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Internal schematic diagram
$
'
3
!-V
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STF34NM60N
STP34NM60N
STW34NM60N
34NM60N
TO-220FP
TO-220
TO-247
Tube
March 2011
Doc ID 17740 Rev 3
1/17
www.st.com
17
Contents
STF34NM60N, STP34NM60N, STW34NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
.............................................. 9
Doc ID 17740 Rev 3
STF34NM60N, STP34NM60N, STW34NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220, TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
600
V
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
29
29 (1)
A
ID
Drain current (continuous) at TC = 100 °C
18
18
A
Drain current (pulsed)
116
116
A
Total dissipation at TC = 25 °C
210
40
W
IDM
(2)
PTOT
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max)
10.5
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
345
mJ
Peak diode recovery voltage slope
15
V/ns
dv/dt(3)
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
TJ
1200
V
- 55 to 150
°C
Max. operating junction temperature
150
1. Limited only by maximu temperature allowed.
2. Pulse width limited by safe operating area.
3.
ISD ≤ 29 A, di/dt ≤ 400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
Doc ID 17740 Rev 3
TO-220
TO-247
0.60
62.5
50
300
TO-220FP
Unit
3.13
°C/W
62.5
°C/W
°C
3/17
Electrical characteristics
2
STF34NM60N, STP34NM60N, STW34NM60N
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Value
Symbol
Parameter
Test conditions
Unit
Min.
Typ.
Max.
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating @125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 14.5 A
0.092
0.105
Ω
V(BR)DSS
Table 5.
Symbol
600
2
V
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
2722
173
1.75
-
pF
pF
pF
Coss eq.(1)
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
-
458
-
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =300 V, ID = 14.5 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 23),
(see Figure 18)
-
17
34
106
67
-
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 29 A,
VGS = 10 V,
(see Figure 19)
-
83.6
14
45
-
nC
nC
nC
Rg
Gate input resistance
f=1MHz Gate DC Bias=0
Test signal level=20 mV
Open drain
-
2.9
-
Ω
Ciss
Coss
Crss
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/17
Doc ID 17740 Rev 3
STF34NM60N, STP34NM60N, STW34NM60N
Table 6.
Symbol
Electrical characteristics
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
29
116
A
A
1.6
V
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 29 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 29 A, VDD = 60 V
di/dt=100 A/µs
(see Figure 20)
-
408
8
39
ns
nC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 29 A,VDD = 60 V
di/dt=100 A/µs,
TJ = 150 °C
(see Figure 20)
-
480
10
42
ns
nC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Doc ID 17740 Rev 3
5/17
Electrical characteristics
STF34NM60N, STP34NM60N, STW34NM60N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Thermal impedance for TO-247
AM09017v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
100
10
10µs
100µs
1ms
10ms
1
0.1
0.1
Figure 4.
10
1
100
VDS(V)
Safe operating area for TO-220FP
AM09018v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
100
10
1
is
a
re on)
a
is DS(
th
in ax R
n
io y m
at
er d b
Op mite
Li
10µs
100µs
1ms
10ms
0.1
0.01
0.1
Figure 6.
10
1
100
VDS(V)
Safe operating area for TO-247
AM09019v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
100
is
ea )
ar S(on
t
RD
in ax
n
io y m
t
b
ra
pe ed
O mit
i
L
10µs
s
hi
10
100µs
1ms
10ms
1
0.1
0.1
6/17
1
10
100
VDS(V)
Doc ID 17740 Rev 3
STF34NM60N, STP34NM60N, STW34NM60N
Figure 8.
Output characteristics
Electrical characteristics
Figure 9.
Transfer characteristics
AM09020v1
ID (A)
AM09021v1
ID (A)
VGS=10V
80
80
VDS=20V
70
70
60
60
6V
50
50
40
40
30
30
20
20
5V
10
0
0
5
10
20
15
25
10
30
0
0
VDS(V)
2
4
8
6
VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM09022v1
VGS
(V)
VDS
VDD=480V
ID=29A
12
400
AM09023v1
RDS(on)
(Ω)
VGS=10V
0.098
350
10
300
0.096
8
250
0.094
6
200
0.092
150
4
0.090
100
2
50
0
0
2
6
4
8
10 12
14
0
16 Qg(nC)
Figure 12. Capacitance variations
0.086
0
5
10
15
20
25
30
ID(A)
Figure 13. Output capacitance stored energy
AM09024v1
C
(pF)
0.088
AM09025v1
Eoss
(µJ)
10000
Ciss
2
1000
Coss
100
1
10
1
0.1
Crss
1
10
100
VDS(V)
Doc ID 17740 Rev 3
0
0
100
200
300
400
500
VDS(V)
7/17
Electrical characteristics
STF34NM60N, STP34NM60N, STW34NM60N
Figure 14. Normalized gate threshold voltage
vs temperature
AM09026v1
VGS(th)
(norm)
Figure 15. Normalized on resistance vs
temperature
AM09027v1
RDS(on)
(norm)
ID=250µA
2.1
1.10
ID=14.5A
1.9
1.7
1.00
1.5
1.3
0.90
1.1
0.80
0.9
0.70
-50 -25
0.5
-50 -25
0.7
0
25
50
75 100
TJ(°C)
Figure 16. Normalized BVDSS vs temperature
AM00897v1
BVDSS
(norm)
ID=1mA
0
25
50
TJ(°C)
75 100
Figure 17. Source-drain diode forward
characteristics
AM09039v1
VSD
(V)
1.07
1.6
1.05
1.4
1.03
1.2
1.01
1.0
0.99
0.8
0.97
0.6
0.95
0.4
TJ=-50°C
TJ=25°C
TJ=150°C
0.93
-50 -25
8/17
0
25
50
75 100
TJ(°C)
Doc ID 17740 Rev 3
0
5
10
15
20
25
ISD(A)
STF34NM60N, STP34NM60N, STW34NM60N
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 22. Unclamped inductive waveform
AM01471v1
Figure 23. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 17740 Rev 3
10%
AM01473v1
9/17
Package mechanical data
4
STF34NM60N, STP34NM60N, STW34NM60N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/17
Doc ID 17740 Rev 3
STF34NM60N, STP34NM60N, STW34NM60N
Table 7.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Figure 24. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 17740 Rev 3
11/17
Package mechanical data
Table 8.
STF34NM60N, STP34NM60N, STW34NM60N
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
12/17
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 17740 Rev 3
STF34NM60N, STP34NM60N, STW34NM60N
Package mechanical data
Figure 25. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 17740 Rev 3
13/17
Package mechanical data
Table 9.
STF34NM60N, STP34NM60N, STW34NM60N
TO-247 mechanical data
mm
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
14/17
Max.
5.50
Doc ID 17740 Rev 3
STF34NM60N, STP34NM60N, STW34NM60N
Package mechanical data
Figure 26. TO-247 drawing
0075325_F
Doc ID 17740 Rev 3
15/17
Revision history
5
STF34NM60N, STP34NM60N, STW34NM60N
Revision history
Table 10.
16/17
Document revision history
Date
Revision
Changes
05-Aug-2010
1
Initial release.
02-Sep-2010
2
Updated title on cover page and Table 4: On/off states.
08-Mar-2011
3
Document status promoted from preliminary data to datasheet.
Doc ID 17740 Rev 3
STF34NM60N, STP34NM60N, STW34NM60N
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Doc ID 17740 Rev 3
17/17