STF24NM60N, STI24NM60N STP24NM60N, STW24NM60N N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET TO-220FP, I2PAK, TO-220 and TO-247 Features TAB Order codes VDSS (@Tjmax) RDS(on) max. ID STF24NM60N 650 V < 0.19 Ω 17 A STI24NM60N 650 V < 0.19 Ω 17 A STP24NM60N 650 V < 0.19 Ω 17 A STW24NM60N 650 V < 0.19 Ω 17 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 3 12 2 1 I2PAK TO-220FP 3 1 2 2 3 1 TO-247 TO-220 Applications ■ Switching applications Figure 1. Internal schematic diagram Description $OR4!" These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes Marking STF24NM60N Package TO-220FP I2PAK STI24NM60N 24NM60N Tube STP24NM60N TO-220 STW24NM60N TO-247 August 2011 Packaging Doc ID 18047 Rev 3 1/19 www.st.com 19 Contents STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 Doc ID 18047 Rev 3 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID Gate- source voltage 17 Drain current (continuous) at TC = 100 °C (2) PTOT (3) dv/dt Unit TO-220FP ± 30 Drain current (continuous) at TC = 25 °C ID IDM I2PAK TO-220 TO-247 Parameter 11 Drain current (pulsed) 68 Total dissipation at TC = 25 °C 125 V 17 (1) A 11 (1) A 68 (1) A 30 Peak diode recovery voltage slope W 15 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) TJ Tstg Operating junction temperature Storage temperature V/ns 2500 -55 to 150 V °C 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD ≤ 17 A, di/dt ≤ 400 A/µs, peak VDS ≤V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter TO-220FP Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max. TJ Table 4. Symbol Maximum lead temperature for soldering purpose Unit I2PAK TO-220 4 TO-247 1 62.5 °C/W 50 300 °C/W °C Avalanche characteristics Parameter Value Unit IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) 6 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 300 mJ Doc ID 18047 Rev 3 3/19 Electrical characteristics 2 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. Max. 600 V IDSS VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 3 4 V 0.168 0.19 Ω Min. Typ. Max. Unit - pF pF pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 6. Symbol 2 VGS = 10 V, ID = 8 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1400 44 7.4 Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 190 - pF Rg Gate input resistance f=1 MHz open drain - 5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 17 A, VGS = 10 V (see Figure 19) - 46 7 23 - nC nC nC Ciss Coss Crss Coss eq.(1) 1. Co(eff). is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 4/19 Unit Doc ID 18047 Rev 3 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Table 7. Switching times Symbol Parameter td(on) tr(v) td(off) tf(i) Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Electrical characteristics Test conditions Turn-on delay time Voltage rise time Turn-off-delay time Fall time VDD = 300 V, ID = 8.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Min. Typ. - 11.5 16.5 73 37 Max Unit - ns ns ns ns Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Min. Typ. Max Unit - 17 68 A A 1.6 V Forward on voltage ISD = 17 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VDD= 60 V (see Figure 20) - 340 4.6 27 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 20) - 404 5.7 28 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 18047 Rev 3 5/19 Electrical characteristics STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 5. Thermal impedance for I2PAK and TO-220 Figure 7. Thermal impedance for TO-247 AM07975v1 1 D S( on ) 10 O Li per m at ite io d ni by n m this ax a R rea is ID (A) 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 10 1 100 VDS(V) Safe operating area for I2PAK and TO-220 Figure 4. AM07976v1 D S( on ) O Li per m at ite io d ni by n m this ax a R rea is ID (A) 10 10µs 100µs 1ms 1 0.1 0.1 Figure 6. Tj=150°C Tc=25°C Sinlge pulse 10 1 10ms 100 VDS(V) Safe operating area for TO-247 AM10327v1 n) (o DS 10 Op Lim era ite tion d by in th m is ax ar R e a is ID (A) 10µs 100µs 1ms 1 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 6/19 1 10 100 VDS(V) Doc ID 18047 Rev 3 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Figure 8. Output characteristics Electrical characteristics Figure 9. Transfer characteristics AM07977v1 ID (A) 40 AM07978v1 ID (A) VGS = 10 V 40 VDS= 20 V VGS = 7 V 30 30 VGS = 6 V 20 20 10 10 VGS = 5 V 0 0 5 10 15 20 0 0 25 VDS(V) 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM07979v1 VGS (V) VDD=480V 12 500 ID= 17A VDS 10 AM08534v1 RDS(on) (Ω) 0.176 0.174 400 0.172 300 0.168 VGS=10V 0.170 8 6 0.166 200 0.164 4 100 2 0.162 0.160 0 0 20 10 30 0 50 Qg(nC) 40 Figure 12. Capacitance variations 0.158 0 5 10 15 ID(A) Figure 13. Output capacitance stored energy AM08535v1 C (pF) 6100 AM08536v1 Eoss (µJ) 9.0 8.0 5100 Ciss 7.0 6.0 4100 5.0 3100 4.0 Coss 3.0 2100 2.0 1100 1.0 Crss 100 0 20 40 60 VDS(V) Doc ID 18047 Rev 3 0 0 100 200 300 400 500 500 VDS(V) 7/19 Electrical characteristics STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Figure 14. Normalized gate threshold voltage vs temperature AM08537v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM08538v1 RDS(on) (norm) ID= 8 A 1.10 2.0 ID = 250 µA 1.00 1.5 0.90 1.0 0.80 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 16. Normalized BVDSS vs temperature AM08539v1 BVDSS (norm) 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 17. Source-drain diode forward characteristics AM10328v1 VSD (V) 1.4 TJ=-50°C 1.06 1.2 ID= 1 mA 1.03 TJ=25°C 1.0 1.00 TJ=150°C 0.8 0.6 0.98 0.4 0.95 0.92 -50 -25 8/19 0.2 0 0 25 50 75 100 TJ(°C) Doc ID 18047 Rev 3 0 2 4 6 8 10 12 14 16 ISD(A) STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 18047 Rev 3 10% AM01473v1 9/19 Package mechanical data 4 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/19 Doc ID 18047 Rev 3 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 24. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 18047 Rev 3 11/19 Package mechanical data Table 10. STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N I²PAK (TO-262) mechanical data mm. DIM. min. 12/19 typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Doc ID 18047 Rev 3 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Package mechanical data Figure 25. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 18047 Rev 3 13/19 Package mechanical data Table 11. STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/19 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 18047 Rev 3 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Package mechanical data Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 18047 Rev 3 15/19 Package mechanical data Table 12. STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N TO-247 mechanical data mm Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 16/19 Max. 5.50 Doc ID 18047 Rev 3 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Package mechanical data Figure 27. TO-247 drawing 0075325_F Doc ID 18047 Rev 3 17/19 Revision history 5 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Revision history Table 13. Document revision history Date Revision Changes 05-Jan-2011 1 First release. 01-Jul-2011 2 – Corrected Rthj-amb value (see Table 3: Thermal data) – Added new package and mechanical data: TO-247. Inserted device in I2PAK: 22-Aug-2011 18/19 3 – updated Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal data – inserted new mechanical data in Section 4: Package mechanical data Doc ID 18047 Rev 3 STF24NM60N, STI24NM60N, STP24NM60N, STW24NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 18047 Rev 3 19/19