STD100N3LF3 N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET™ II Power MOSFET Features Type VDSSS STD100N3LF3 30 V RDS(on) ID Pw <0.0055 Ω 80 A(1) 110 W 3 1. Current limited by package 1 ■ 100% avalanche tested ■ Logic level threshold DPAK Applications ■ Switching application – Automotive Figure 1. Internal schematic diagram Description $4!"OR This STripFET™ II Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STD100N3LF3 100N3LF3 DPAK Tape and reel November 2009 Doc ID 13206 Rev 3 1/14 www.st.com 14 Contents STD100N3LF3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/14 ............................................... 9 Doc ID 13206 Rev 3 STD100N3LF3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 20 V Drain current (continuous) at TC = 25 °C 80 A Drain current (continuous) at TC=100 °C 70 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C 3.9 V/ns -55 to 175 °C Value Unit VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID (1) ID IDM (2) PTOT dv/dt (3) Peak diode recovery voltage slope Tstg TJ Storage temperature Max. operating junction temperature 1. Current limited by package. 2. Pulse width limited by safe operating area 3. ISD ≤80A, di/dt ≤360 A/µs, VDS ≤V(BR)DSS, TJ ≤TJMAX Table 3. Symbol Thermal data Parameter RthJC Thermal resistance junction-case max 1.36 °C/W RthJA Thermal resistance junction-ambient max 100 °C/W Tl Maximum lead temperature for soldering purpose 275 °C Value Unit Table 4. Symbol Avalanche characteristics Parameter IAR Not-repetitive avalanche current (pulse width limited by TJ max) 40 A EAS Single pulsed avalanche energy (starting TJ = 25 °C, ID = IAV, VDD = 24 V) 500 mJ Doc ID 13206 Rev 3 3/14 Electrical characteristics 2 STD100N3LF3 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V Gate threshold voltage VDS= VGS, ID = 250 µA V(BR)DSS VGS(th) Min. Table 6. Symbol Static drain-source on resistance Unit V 1 VGS = 10 V, ID = 40 A @125 °C VGS = 5 V, ID = 20 A @125 °C 1 10 µA µA ±200 nA 2.5 V 0.0045 0.0055 0.008 0.01 Ω Ω 0.0068 Ω 0.0146 Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS = 10 V, ID = 15 A - 31 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 2060 728 67 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 24 V, ID = 80 A VGS = 5 V Figure 16 on page 9 - 20 7 7.5 RG Gate input resistance f = 1 MHz gate DC Bias = 0 test signal level = 20 mV open drain - 1.9 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/14 Max. 30 VGS = 10 V, ID = 40 A VGS = 5 V, ID = 20 A RDS(on) Typ. Doc ID 13206 Rev 3 27 nC nC nC Ω STD100N3LF3 Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Test conditions Turn-on delay time Rise time Turn-off delay time Fall time VDD= 15 V, ID= 40 A, RG=4.7Ω, VGS=10 V Figure 15 on page 9 Min. Typ. Max. Unit - 9 205 31 35 - ns ns ns ns Min Typ. Max Unit Source drain diode Parameter Test conditions Source-drain current - 80 A Source-drain current (pulsed) - 320 A 1.3 V Forward on voltage ISD = 40 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 25 V, TJ = 150 °C Figure 17 on page 9 - 40 40 2 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 13206 Rev 3 5/14 Electrical characteristics STD100N3LF3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/14 Doc ID 13206 Rev 3 STD100N3LF3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized BVDSS vs temperature Figure 12. Normalized on resistance vs temperature Figure 13. Source-drain diode forward characteristics Doc ID 13206 Rev 3 7/14 Electrical characteristics STD100N3LF3 Figure 14. Allowable Iav vs time in avalanche The previous curve gives the single pulse safe operating area for unclamped inductive loads, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS *IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in avalanche (single pulse) tAV is the time in avalanche 8/14 Doc ID 13206 Rev 3 STD100N3LF3 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Doc ID 13206 Rev 3 9/14 Package mechanical data 4 STD100N3LF3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/14 Doc ID 13206 Rev 3 STD100N3LF3 Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 13206 Rev 3 11/14 Packaging mechanical data 5 STD100N3LF3 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 B1 12/14 inch D 1.5 D1 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 0.059 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 R 40 W 15.7 0.075 0.082 1.574 16.3 0.618 0.641 Doc ID 13206 Rev 3 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD100N3LF3 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 07-Feb-2006 1 Initial release. 07-May-2009 2 Added VGS(th) max value in Table 5: On/off states 09-Nov-2009 3 Added VGS parameter in Table 2: Absolute maximum ratings Doc ID 13206 Rev 3 13/14 STD100N3LF3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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