STB28NM50N, STF28NM50N STP28NM50N, STW28NM50N N-channel 500 V, 0.135 Ω, 21 A D²PAK, TO-220, TO-220FP, TO-247 MDmesh™ II Power MOSFET Features Order codes RDS(on) max. VDSS (@Tjmax) ID 3 3 STB28NM50N STF28NM50N STP28NM50N 1 2 1 TO-220 TO-220FP 550 V < 0.158 Ω 2 21 A STW28NM50N ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 2 1 1 D²PAK TO-247 3 Applications ■ Figure 1. Switching applications Internal schematic diagram Description $ These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging D²PAK Tape and reel STB28NM50N STF28NM50N TO-220FP 28NM50N STP28NM50N TO-220 STW28NM50N TO-247 June 2011 Doc ID 17432 Rev 2 Tube 1/21 www.st.com 21 Contents STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 9 Doc ID 17432 Rev 2 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 D²PAK TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 500 V VGS Gate- source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 21 21 (1) A ID Drain current (continuous) at TC = 100 °C 13 13 (1) A IDM (2) Drain current (pulsed) 84 84 (1) A PTOT Total dissipation at TC = 25 °C 150 35 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 2500 V dv/dt (3) Peak diode recovery voltage slope Tstg Tj Storage temperature 15 V/ns - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 21 A, di/dt ≤ 400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb(1) Thermal resistance junction-pcb max Tl Maximum lead temperature for soldering purpose D²PAK TO-247 TO-220FP 0.83 62.5 50 30 3.6 °C/W 62.5 °C/W °C/W 300 300 °C 1. When mounted on 1inch² FR-4 board, 2 oz Cu Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 7.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 300 mJ Doc ID 17432 Rev 2 3/21 Electrical characteristics 2 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 10.5 A V(BR)DSS Table 6. Symbol Ciss Coss Crss Coss(eq)(1) Qg Qgs Qgd Rg 500 2 V 3 Ω 0.135 0.158 Dynamic Parameter Test conditions Min. Typ. Max. Unit - pF pF pF Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 1735 122 4.3 Equivalent output capacitance time related VGS = 0, VDS = 0 to 50 V - 418 - pF Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 21 A, VGS = 10 V, (see Figure 19) - 50 9.5 25 - nC nC nC Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain - 2.7 - Ω 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 4/21 Doc ID 17432 Rev 2 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Table 7. Symbol td(on) tr td(off) tf Table 8. Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM Min. Typ. - 13.6 19 62 52 Max. Unit - ns ns ns ns Source drain diode Parameter IRRM Test conditions VDD = 250 V, ID = 10.5 A RG = 4.7 Ω VGS = 10 V (see Figure 18) Symbol trr Qrr Electrical characteristics Test conditions Min. Typ. Max. Unit - 21 84 A A ISD = 21 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, di/dt = 100 A/µs VDD = 400 V (see Figure 23) - 326 5 30 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, di/dt = 100 A/µs VDD = 400 V, Tj = 150 °C (see Figure 23) - 376 6.2 33.2 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 17432 Rev 2 5/21 Electrical characteristics STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK O N /P ,IM ERAT ITE ION DB IN YM THIS AX ARE 2 AI $3 S )$ ! Thermal impedance for TO-220, D²PAK Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 !-V Figure 3. S S MS MS 4J # 4C # 3INGLE PULSE Figure 4. 6$36 Safe operating area for TO-220FP !-V N O $3 )$ ! /P ,IM ERAT ITE ION DB IN YM THIS AX ARE 2 A IS S S MS 4J # 4C # MS 3INGLE PULSE Figure 6. 6$36 Safe operating area for TO-247 !-V )$ ! ON S S $3 /P ,IM ERAT ITE ION DB IN YM THIS AX ARE 2 A IS MS 4J # 4C # MS 3INGLE PULSE 6/21 6$36 Doc ID 17432 Rev 2 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Figure 8. Output characteristics Figure 9. !-V )$ ! 6'36 Electrical characteristics Transfer characteristics )$ ! !-V 6$36 6 6 6$36 6'36 Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance !-V 6'3 6 6$3 6'3 6$$6 /HM )$! 1GN# Figure 12. Capacitance variations 6'36 )$! Figure 13. Output capacitance stored energy !-V # P& !-V 2$3ON #ISS !-V %OSS * #OSS #RSS 6$36 Doc ID 17432 Rev 2 6$36 7/21 Electrical characteristics STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Figure 14. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM Figure 15. Normalized on resistance vs temperature !-V 2$3ON NORM )$! 6'36 )$! 4* # Figure 16. Normalized BVDSS vs temperature !-V "6$33 NORM )$M! 4* # Figure 17. Source-drain diode forward characteristics AM09090v1 VSD (V) TJ=-50°C 1.2 TJ=25°C 1.0 0.8 TJ=150°C 0.6 0.4 0.2 8/21 0 4* # Doc ID 17432 Rev 2 0 5 10 15 20 ISD(A) STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 17432 Rev 2 10% AM01473v1 9/21 Package mechanical data 4 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/21 Doc ID 17432 Rev 2 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 24. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 17432 Rev 2 11/21 Package mechanical data Table 10. STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/21 Max. 0.4 0° 8° Doc ID 17432 Rev 2 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Package mechanical data Figure 25. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint Figure 26. D²PAK (TO-263) drawing 0079457_S a. All dimension are in millimeters Doc ID 17432 Rev 2 13/21 Package mechanical data Table 11. STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/21 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 17432 Rev 2 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 17432 Rev 2 15/21 Package mechanical data Table 12. STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N TO-247 mechanical data mm Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 16/21 Max. 5.50 Doc ID 17432 Rev 2 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Package mechanical data Figure 28. TO-247 drawing 0075325_F Doc ID 17432 Rev 2 17/21 Packaging mechanical data 5 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 18/21 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 17432 Rev 2 Min. Max. 330 13.2 26.4 30.4 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Packaging mechanical data Figure 29. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 30. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 17432 Rev 2 19/21 Revision history 6 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Revision history Table 14. 20/21 Document revision history Date Revision Changes 19-Jul-2010 1 First release. 27-Jun-2011 2 – Updated Table 6: Dynamic. – Updated Section 2.1: Electrical characteristics (curves). Doc ID 17432 Rev 2 STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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