STFI13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET in I²PAKFP package Datasheet — production data Features Type VDSS (@Tjmax) STFI13NM60N 650 V RDS(on) max PTOT ID < 0.36 Ω 11 A 25 W ■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 1 2 3 I²PAKFP (TO-281) Applications ■ Switching applications Description Figure 1. This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Internal schematic diagram $ ' 3 3# Table 1. Device summary Order codes Marking Packages Packaging STFI13NM60N 13NM60N I2PAKFP (TO-281) Tube May 2012 This is information on a product in full production. Doc ID 018960 Rev 4 1/12 www.st.com 12 Contents STFI13NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 018960 Rev 4 STFI13NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ± 25 V (1) A ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (2) PTOT dv/dt (3) Drain current (pulsed) 6.93 (1) 44 (1) A A Total dissipation at TC = 25 °C 25 W Peak diode recovery voltage slope 15 V/ns 2500 V - 55 to 150 °C 150 °C Value Unit 5 °C/W 62.5 °C/W Value Unit 3.5(1) A 200 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj 11 Max. operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Table 4. Symbol Avalanche characteristics Parameter IAS Repetitive or non repetitive avalanche current EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 1. Limited by maximum junction temperature. Doc ID 018960 Rev 4 3/12 Electrical characteristics 2 STFI13NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage (VGS = 0) ID = 1 mA IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, Tc = 125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±0.1 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 5.5 A 0.28 0.36 Ω V(BR)DSS Table 6. Symbol 600 2 V Dynamic Parameter Test conditions Min. Typ. Max. Unit - pF pF pF Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 790 60 3.6 Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 135 - pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 11 A, VGS = 10 V, (see Figure 14) - 30 4 15 - nC nC nC RG Gate input resistance f=1 MHz, ID = 0 3 4.7 6 Ω Ciss Coss Crss Coss eq. (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Table 7. Symbol td(on) tr td(off) tf 4/12 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 5.5 A RG = 4.7 Ω VGS = 10 V (see Figure 13) Doc ID 018960 Rev 4 Min. Typ. - 3 8 30 10 Max. Unit - ns ns ns ns STFI13NM60N Electrical characteristics Table 8. Symbol Source drain diode Parameter Test conditions Min Typ. Max Unit - 11 44 A A 1.5 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 11 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V (see Figure 15) - 230 2 18 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 9 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 15) - 290 190 17 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 018960 Rev 4 5/12 Electrical characteristics STFI13NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics !-V )$ ! ON / P ,I ERA M ITE TION D IN BY M THIS AX A 2 RE A $ 3 IS S S MS 4J # 4C # MS 3INGLE PULSE Figure 4. ID (A) Output characteristics AM03300v1 VGS=10V 22 20 18 16 14 12 10 8 6 4 2 0 0 Figure 6. 6$36 5V 4V 10 15 20 25 VDS(V) Normalized VDS vs temperature AM09028v1 VDS (norm) ID=1mA 1.10 VDS=20V 22 20 6V 5 AM03301v1 ID (A) 18 16 14 12 10 8 6 4 2 0 0 Figure 7. 2 1.06 8 6 10 VGS(V) Static drain-source on resistance AM03302v1 RDS(on) (Ω) 0.30 1.08 4 VGS=10V 0.28 1.04 1.02 0.26 1.00 0.24 0.98 0.96 0.94 0.92 -50 -25 6/12 0.22 0 25 50 75 100 TJ(°C) 0.2 0 Doc ID 018960 Rev 4 2 4 6 8 10 ID(A) STFI13NM60N Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM03305v1 VGS (V) VDS(V) VDD=480V 12 AM03304v1 C (pF) 500 ID=11A VDS Capacitance variations 1000 10 Ciss 400 8 300 100 6 Coss 200 4 10 100 2 0 20 10 0 30 1 0.1 0 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM03306v1 VGS(th) (norm) 1.10 Crss 1 10 100 VDS(V) Figure 11. Normalized on resistance vs temperature AM03307v1 RDS(on) (norm) 2.1 ID=250µA 1.9 ID=5.5A VGS=10V 1.7 1.00 1.5 1.3 0.90 1.1 0.80 0.9 0.70 -50 -25 0.5 -50 -25 0.7 0 25 50 75 100 TJ(°C) 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM09290v1 VSD (V) TJ=-50°C TJ=25°C 1.2 1.0 TJ=150°C 0.8 0.6 0.4 0 2 4 6 8 10 ISD(A) Doc ID 018960 Rev 4 7/12 Test circuits 3 STFI13NM60N Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 018960 Rev 4 10% AM01473v1 STFI13NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 018960 Rev 4 9/12 Package mechanical data Table 9. STFI13NM60N I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 19. I2PAKFP (TO-281) drawing 8291506 rev.A 10/12 Doc ID 018960 Rev 4 STFI13NM60N 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 21-Jun-2011 1 First release. 03-Nov-2011 2 Figure 2: Safe operating area and Figure 3: Thermal impedance have been added. 20-Mar-2012 3 Document status promoted from preliminary data to production data. Package name has been updated. 15-May-2012 4 RG values have been modified in Table 6: Dynamic Doc ID 018960 Rev 4 11/12 STFI13NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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