STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages Datasheet − production data Features Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 TAB VDSS RDS(on) max. 620 V < 1.2 Ω ID PTOT 5.5 A 30 W 30 W 90 W 90 W 90 W 3 1 3 12 2 TO-220FP I²PAK TAB 1 3 TAB I²PAK FP ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected 3 3 1 2 2 1 IPAK TO-220 Figure 1. Internal schematic diagram Applications ■ 2 D(2,TAB) Switching applications Description G(1) These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. S(3) AM01476v1 Device summary Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 August 2012 This is information on a product in full production. Marking Package Packaging 6N62K3 TO-220FP I²PAKFP I²PAK TO-220 IPAK Tube Doc ID 14676 Rev 4 1/19 www.st.com 19 Contents STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/19 .............................................. 9 Doc ID 14676 Rev 4 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220FP I²PAK TO-220 I²PAKFP VDS Drain-source voltage VGS Gate- source voltage ID Drain current (continuous) at TC = 25 °C ID 5.5 Unit IPAK 620 V ± 30 V (1) 5.5 A 3 A (1) Drain current (continuous) at TC = 100 °C 3 IDM (2) Drain current (pulsed) 22 (1) 22 A PTOT Total dissipation at TC = 25 °C 30 90 W IAR (3) Avalanche current, repetitive or not-repetitive 5.5 A EAS (4) Single pulse avalanche energy 140 mJ Gate-source human body model (R=1.5 kΩ, C=100 pF) 2.5 kV Peak diode recovery voltage slope 12 V/ns ESD dv/dt (5) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. Pulse width limited by Tj max. 4. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. 5. ISD ≤ 5.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDSpeak ≤V(BR)DSS. Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max. Doc ID 14676 Rev 4 TO-220FP I²PAK I²PAKFP TO-220 4.17 1.39 62.5 IPAK Unit °C/W 100 °C/W 3/19 Electrical characteristics 2 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. 620 V IDSS Zero gate voltage VDS = 620 V drain current (VGS = 0) VDS = 620 V, TC=125 °C 0.8 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±9 µA 3.75 4.5 V 0.95 1.2 Ω VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on Static drain-source on resistance Table 5. Symbol VGS = 10 V, ID = 2.8 A Parameter Test conditions Min. Typ. Max. Unit VDS = 50 V, f = 1 MHz, VGS = 0 - 875 100 17 - pF pF pF - 28 - pF - 63 - pF - 3.5 - Ω - 34 4 22 - nC nC nC Equivalent output Coss(er)(1) capacitance energy related Coss(tr) (2) 3 Dynamic Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss Equivalent output capacitance time related VGS = 0, VDS = 0 to 480 V RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 496 V, ID = 5.5 A, VGS = 10 V (see Figure 20) 1. Is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS increases from 0 to 80% VDSS 4/19 Unit Doc ID 14676 Rev 4 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Table 6. Symbol td(on) tr td(off) tf Table 7. Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 310 V, ID = 2.75 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 22 12 49 20 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 5.5 27 A A ISD = 5.5 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 24) - 290 1.9 13.5 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 24) - 335 2.4 14.5 ns µC A Min. Typ. 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol V(BR)GSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage (ID = 0) Igs=± 1 mA 30 Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components Doc ID 14676 Rev 4 5/19 Electrical characteristics STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, I²PAK Figure 3. Thermal impedance for TO-220, I²PAK Figure 5. Thermal impedance for TO-220FP, I²PAKFP Figure 7. Thermal impedance for IPAK AM09051v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 n) 100µs S( o Op Lim era ite tion d b in y m this ax ar RD ea is 10µs 1 0.1 0.1 Figure 4. 1ms 10ms 10 1 100 VDS(V) Safe operating area for TO-220FP, I²PAKFP AM09053v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 is ea ) ar S(on D R t in ax n io y m t b ra pe ed O imit L 10µs 100µs s hi 1 1ms 10ms 0.1 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for IPAK AM09052v1 ID (A) Tj=150°C Tc=25°C Single pulse ) 10µs (o n 100µs DS Op Lim era ite tion d b in y m this ax ar R e ai s 10 1 0.1 0.1 6/19 1 1ms 10ms 10 100 VDS(V) Doc ID 14676 Rev 4 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Figure 8. Output characteristics Figure 9. AM09054v1 ID (A) 12 Electrical characteristics Transfer characteristics AM09055v1 ID (A) 8 VGS=10V VDS=15V 7 10 6 8 5 6V 4 6 3 4 2 2 1 5V 0 0 20 10 0 0 VDS(V) 2 4 8 6 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance AM09057v1 VGS (V) VDS(V) VDD=496V ID=5.5A 12 500 AM09056v1 RDS(on) (Ω) VGS=10V 1.15 VDS 1.10 10 400 8 1.05 300 1.00 6 200 4 100 2 0 0 10 20 30 0 Qg(nC) Figure 12. Capacitance variations 0.90 0.85 0 1 2 3 4 5 6 ID(A) Figure 13. Output capacitance stored energy AM09058v1 C (pF) 0.95 AM09059v1 Eoss (µJ) 5 1000 Ciss 4 100 3 Coss 10 2 Crss 1 1 0.1 1 10 100 VDS(V) Doc ID 14676 Rev 4 0 0 100 200 300 400 500 VDS(V) 7/19 Electrical characteristics STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Figure 14. Normalized gate threshold voltage vs temperature AM09061v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature AM09062v1 RDS(on) (norm) ID=50µA 1.10 ID=2.8A VGS=10V 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 25 -25 75 125 TJ(°C) Figure 16. Normalized BVDSS vs temperature AM09060v1 BVDSS (norm) 0.0 -75 Figure 17. 25 -25 75 TJ(°C) 125 Source-drain diode forward characteristics AM09063v1 VSD (V) TJ=-50°C ID=1mA 1.0 1.10 TJ=25°C 0.8 1.05 0.6 1.00 TJ=150°C 0.4 0.95 0.90 -75 0.2 25 -25 75 125 TJ(°C) Figure 18. Maximum avalanche energy vs temperature AM09064v1 EAS (mJ) 160 ID=5.5 A VDD=50 V 140 120 100 80 60 40 20 0 0 8/19 20 40 60 80 100 120 140 TJ(°C) Doc ID 14676 Rev 4 0 0 1 2 3 4 5 6 ISD(A) STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 14676 Rev 4 10% AM01473v1 9/19 Package mechanical data 4 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/19 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 14676 Rev 4 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Package mechanical data Figure 25. TO-220FP drawing 7012510_Rev_K_B Doc ID 14676 Rev 4 11/19 Package mechanical data Table 10. STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 26. I2PAKFP (TO-281) drawing REV! 12/19 Doc ID 14676 Rev 4 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Table 11. Package mechanical data I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 27. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 14676 Rev 4 13/19 Package mechanical data Table 12. STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/19 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 14676 Rev 4 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Package mechanical data Figure 28. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 14676 Rev 4 15/19 Package mechanical data Table 13. STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 IPAK (TO-251) mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 16/19 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° Doc ID 14676 Rev 4 1.00 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Package mechanical data Figure 29. IPAK (TO-251) drawing 0068771_J Doc ID 14676 Rev 4 17/19 Revision history 5 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Revision history Table 14. Document revision history Date Revision 19-May-2006 1 First release. 02-May-2011 2 RG value has been updated. 06-Dec-2011 3 Removed p/n STD6N62K3 in DPAK. 4 Added package, mechanical data: I²PAKFP Updated Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal data, Table 4: On /off states, Table 13: IPAK (TO-251) mechanical data and Figure 29: IPAK (TO-251) drawing Minor text changes. 03-Aug-2012 18/19 Changes Doc ID 14676 Rev 4 STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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