STW43NM60N N-channel 600 V, 0.075 Ω, 35 A MDmesh™ II Power MOSFET TO-247 Features Type VDSS (@Tjmax) RDS(on) max ID STW43NM60N 650 V <0.088 Ω 35 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 TO-247 Application ■ 3 1 Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $ ' 3 3# Table 1. Device summary Order code Marking Package Packaging STW43NM60N 43NM60N TO-247 Tube January 2009 Rev 3 1/12 www.st.com 12 Contents STW43NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 STW43NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 35 A ID Drain current (continuous) at TC = 100 °C 22 A Drain current (pulsed) 140 A Total dissipation at TC = 25 °C 255 W Peak diode recovery voltage slope 15 V/ns –55 to 150 °C 150 °C Value Unit 0.49 °C/W IDM (1) PTOT dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 35 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit 14 A 1000 mJ Table 4. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 3/12 Electrical characteristics 2 STW43NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD=480 V, ID = 35 A, VGS=10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 17.5 A 600 V 30 2 3 V/ns 0.075 0.088 Ω 1. Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs (1) Forward transconductance VDS=15 V, ID = 17.5 A 17 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 4200 290 30 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 600 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 35 A, VGS = 10 V, (see Figure 15) 130 22 66 nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain 1.4 Ω Coss eq. (2) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/12 STW43NM60N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. Unit 25 45 130 60 VDD = 300 V, ID = 17.5 A RG = 4.7 Ω VGS = 10 V (see Figure 14) ns ns ns ns Source drain diode Parameter Test conditions Min Typ. Source-drain current Source-drain current (pulsed) Max Unit 35 140 A A 1.5 V Forward on voltage ISD = 35 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, di/dt = 100 A/µs VDD = 100 V (see Figure 16) 540 12 44 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 16) 660 14 45 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STW43NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Thermal impedance Figure 5. Transfer characteristics AM00887v1 ID (A) 100 Figure 3. 10µs Operation in this area is Limited by max RDS(on) 100µs 10 1ms 10ms 1 0.1 0.1 Figure 4. ID (A) 10 1 VDS(V) 100 Output characteristics AM00888v1 VGS=10V 100 AM00889v1 ID (A) 100 7V 80 80 6V 60 60 40 40 5V 20 0 0 Figure 6. 20 5 10 20 15 25 VDS(V) Transconductance 0 0 Figure 7. AM00890v1 GFS (S) TJ=-50°C RDS(on) (Ω) 0.080 20.5 2 4 6 8 10 VGS(V) Static drain-source on resistance AM00891v1 ID=17.5A VGS=10V 0.078 TJ=25°C 0.076 15.5 0.074 TJ=150°C 10.5 0.072 0.070 5.5 0.068 0.5 0 6/12 10 20 30 ID(A) 0.066 0 10 20 30 ID(A) STW43NM60N Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM00892v1 VGS (V) VDD=480V VGS=10V ID=35A 10 Capacitance variations AM00893v1 C (pF) 10000 Ciss 8 1000 6 Coss 100 4 Crss 10 2 0 0 20 40 60 80 100 120 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM00894v1 VGS(th) (norm) 1.10 1 0.1 1 10 100 VDS(V) Figure 11. Normalized on resistance vs temperature AM00895v1 RDS(on) (norm) 2.0 1.00 1.5 0.90 1.0 0.80 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics 0 25 50 75 100 TJ(°C) Figure 13. Normalized BVDSS vs temperature AM00896v1 VSD (V) 0.5 -50 -25 AM00897v1 BVDSS (norm) 1.0 1.06 TJ=-50°C 0.9 1.03 0.8 TJ=-50°C 1.00 0.7 TJ=150°C 0.98 0.6 0.95 0.5 0.4 0 10 20 30 40 50 ISD(A) 0.92 -50 -25 0 25 50 75 100 TJ(°C) 7/12 Test circuits 3 STW43NM60N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/12 Figure 19. Switching time waveform STW43NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 9/12 Package mechanical data STW43NM60N TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Max. 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 10/12 Typ 5.50 STW43NM60N 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 16-Nov-2007 1 First release 23-Sep-2008 2 Document status promoted from preliminary data to datasheet. 14-Jan-2009 3 VGS value has been modified in Table 2: Absolute maximum ratings 11/12 STW43NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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