STW9N150 N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH™ Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS(on) ID Pw STW9N150 1500V < 2.7Ω 8A 350W ■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance TO-247 Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Internal schematic diagram Applications ■ Switching application Order code Part number Marking Package Packaging STW9N150 W9N150V TO-247 Tube May 2007 Rev 1 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. 1/9 www.st.com 9 Electrical ratings 1 STW9N150 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 8 A ID Drain current (continuous) at TC = 100°C 5 A Drain current (pulsed) 32 A Total dissipation at TC = 25°C 350 W Derating factor 0.37 W/°C -55 to 150 °C Value Unit Rthj-case Thermal resistance junction-case max 0.36 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Max value Unit IDM (1) PTOT Tj Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area Table 2. Symbol Table 3. Symbol 2/9 Thermal data Parameter Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Tbd A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) Tbd mJ STW9N150 2 Electrical characteristics Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125°C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on Static drain-source on resistance Symbol Typ. Max. 1500 3 VGS = 10V, ID = 1.3A Unit V 10 500 µA µA ± 100 nA 4 5 V 2.2 2.7 Ω Typ. Max. Unit VGS = ± 30V VGS(th) Table 5. Min. Dynamic Parameter gfs (1) Forward transconductance Ciss Coss Crss Test conditions Min. VDS = 30V, ID = 2A Tbd S Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 3600 280 35 pF pF pF Rg Gate input resistance f=1MHz Gate DC Bias=0 Test signal level=20mV open drain 2 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 600V, ID = 2.5A, VGS = 10V (see Figure 2) 90 Tbd Tbd nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 3/9 Electrical characteristics STW9N150 Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 750V, ID = 2A, RG = 4.7Ω, VGS = 10V (see Figure 1) Typ. Max Unit Tbd Tbd Tbd Tbd ns ns ns ns Source drain diode Parameter Test conditions Min. Typ. Max Unit Source-drain current Source-drain current (pulsed) 8 32 A A Tbd V Forward on voltage ISD = 4A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, di/dt = 100A/µs VDD= 45V Tj = 25°C (see Figure 3) Tbd Tbd Tbd ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4A, di/dt = 100A/µs VDD= 45V Tj = 150°C (see Figure 3) Tbd Tbd Tbd ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/9 Min. STW9N150 Test circuits 3 Test circuits Figure 1. Switching times test circuit for resistive load Figure 3. Test circuit for inductive load Figure 4. switching and diode recovery times Unclamped Inductive load test circuit Figure 5. Unclamped inductive waveform Switching time waveform Figure 2. Figure 6. Gate charge test circuit 5/9 Package mechanical data 4 STW9N150 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STW9N150 Package mechanical data TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 7/9 Revision history 5 STW9N150 Revision history Table 8. 8/9 Revision history Date Revision 24-May-2007 1 Changes First release STW9N150 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9