STTH102-Y Automotive high efficiency ultrafast diode Features ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature ■ ECOPACK®2 compliant component ■ AEC-Q101 qualified A K SMA (JEDEC DO-214AC) STTH102AY Description The STTH102-Y, which is using ST’s new 200 V planar technology, is specially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications for automotive. November 2011 Table 1. Doc ID 17982 Rev 1 Device summary Symbol Value IF(AV) 1A VRRM 200 V Tj (max) 175 °C VF(max) 0.78 V trr (max) 20 ns 1/7 www.st.com 7 Characteristics STTH102-Y 1 Characteristics Table 2. Absolute rating (limiting values) Symbol Parameter Value Unit 200 V VRRM Repetitive peak reverse voltage IF(AV) Average forward current TL = 148 °C δ = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 40 A Tstg Storage temperature range -65 to + 175 °C Tj Operating junction temperature range -40 to +175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Value Unit 30 °C/W Table 3. Thermal resistance Symbol Rth(j-l) Table 4. Symbol IR (1) VF(2) Parameter Junction to lead Static Electrical Characteristics Parameter Tests conditions Tj = 25 °C Reverse leakage current Tj = 125 °C Tj = 25 °C Forward voltage drop Tj = 125 °C Min. Typ. Max. Unit 1 VR = VRRM µA 1 25 IF = 700 mA 0.90 IF = 1 A 0.97 IF = 1 A 0.68 V 0.78 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.130 IF2(RMS) Table 5. Dynamic electrical characteristics Symbol Parameter trr Reverse recovery time Tj = 25 °C tfr Forward recovery time Forward recovery voltage VFP 2/7 Tests conditions Typ. Max. Unit IF = 0.5 A Irr = 0.25 A IR = 1 A 12 20 ns Tj = 25 °C IF = 1 A dIF/dt = 50 A/ms VFR = 1.1 x VFmax 50 ns Tj = 25 °C IF = 1 A dIF/dt = 50 A/ms 1.8 V Doc ID 17982 Rev 1 Min. STTH102-Y Characteristics Figure 1. Average forward power dissipation Figure 2. versus average forward current PF(AV)(W) Average forward current versus ambient temperature (δ = 0.5) IF(AV)(A) 1.0 δ = 0.05 0.9 δ = 0.1 δ = 0.2 1.2 δ = 0.5 Rth(j-a)=Rth(j-I) 1.0 0.8 δ=1 0.7 0.8 0.6 0.5 Rth(j-a)=120°C/W 0.6 0.4 0.4 0.3 T T 0.2 0.2 0.1 IF(AV)(A) δ=tp/T 0.0 0.0 0.2 Figure 3. 1.0 0.4 0.6 0.8 tp 1.0 δ=tp/T 0.0 0 1.2 Relative variation of thermal impedance junction to ambient versus pulse duration 25 Figure 4. Zth(j-a)/Rth(j-a) Tamb(°C) tp 50 75 100 125 150 175 Forward voltage drop versus forward current IFM(A) 100.0 0.9 Tj=125°C (maximum values) 0.8 0.7 10.0 0.6 δ = 0.5 Tj=125°C (typical values) T 0.5 Tj=25°C (maximum values) 0.4 δ=tp/T 0.3 δ = 0.2 δ = 0.1 0.2 0.1 Figure 5. 1.0 epoxy printed circuit board, e(Cu) = 35 µm, recommended pad layout VFM(V) tp(s) Single pulse 0.0 1.E-01 tp 0.1 1.E+00 1.E+01 1.E+02 1.E+03 Junction capacitance versus reverse voltage applied (typical values) 0.0 0.2 Figure 6. 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Reverse recovery time versus dIF/dt (90% confidence) trr(ns) C(pF) 70 100 F=1MHz VOSC=30mVRMS Tj=25°C IF=1A VR=100V Tj=125°C 60 50 40 Tj=125°C 10 30 Tj=25°C 20 10 VR(V) dIF/dt(A/µs) 1 0 1 10 100 1000 1 Doc ID 17982 Rev 1 10 100 1000 3/7 Characteristics Figure 7. STTH102-Y Peak recovery current versus dIF/dt Figure 8. (90% confidence) IRM(A) Reverse recovery charges versus dIF/dt (90% confidence) Qrr(nC) 3.5 35.0 IF=1A VR=100V Tj=125°C 3.0 32.5 IF=1A VR=100V 30.0 27.5 2.5 25.0 22.5 2.0 20.0 Tj=125°C Tj=125°C 17.5 1.5 15.0 12.5 1.0 10.0 Tj=25°C Tj=25°C 7.5 5.0 0.5 2.5 dIF/dt(A/µs) 0.0 1 10 Figure 9. dIF/dt(A/µs) 0.0 100 1 1000 Relative variations of dynamic parameters versus junction temperature 10 100 1000 Figure 10. Thermal resistance junction to ambient versus copper surface under each lead IRM; trr; Qrr [Tj] / IRM; trr; Qrr [Tj =25°C] 120 3.5 Rth(j-a)(°C/W) Epoxy printed circuit board FR4, copper thickness: 35 µm 110 IF=IF(AV) dIF/dt=200A/µs VR=100V 100 3.0 90 80 QRR 70 2.5 60 50 2.0 40 trr 30 1.5 20 IRM 10 Tj(°C) 25 4/7 50 75 100 S(cm²) 0 1.0 125 150 175 0.0 Doc ID 17982 Rev 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 STTH102-Y 2 Package information Package information ● Epoxy meets UL94 V0 ● Lead-free packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. SMA dimensions Dimensions Ref. E1 D Max. Min. Max. A1 1.90 2.45 0.075 0.094 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.40 0.006 0.016 D 2.25 2.90 0.089 0.114 E 4.80 5.35 0.189 0.211 E1 3.95 4.60 0.156 0.181 L 0.75 1.50 0.030 0.059 A1 A2 L b Inches Min. E C Millimeters Figure 11. Footprint (dimensions in mm) 1.4 2.63 1.4 1.64 5.43 Doc ID 17982 Rev 1 5/7 Ordering information 3 Ordering information Table 7. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STTH102AY U12Y SMA 0.068 g 5000 Tape and reel Revision history Table 8. 6/7 STTH102-Y Revision history Date Revision 07-Nov-2011 1 Changes Initial release. Doc ID 17982 Rev 1 STTH102-Y Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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