STF19NM50N STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω, 14 A MDmesh™ II Power MOSFET in TO-220FP, TO-220 and TO-247 Features Type STF19NM50N STP19NM50N STW19NM50N VDSS @ TJmax RDS(on) max 550 V < 0.25 Ω ID 2 14 A ■ 100% avalanche tested ■ Low input capacitances and gate charge ■ 3 3 1 1 TO-247 2 TO-220 3 1 Low gate input resistance 2 TO-220FP Application ■ Switching applications Figure 1. Description This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order codes Marking STF19NM50N STP19NM50N Package TO-220FP 19NM50N STW19NM50N February 2010 Packaging TO-220 Tube TO-247 Doc ID 17079 Rev 1 1/15 www.st.com 15 Contents STF19NM50N, STP19NM50N, STW19NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 9 Doc ID 17079 Rev 1 STF19NM50N, STP19NM50N, STW19NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 500 V VGS Gate-source voltage ± 25 V ID ID IDM (2) PTOT dv/dt (3) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C 9 9 Drain current (pulsed) 56 Total dissipation at TC = 25 °C 110 Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature (1) 56 (1) 30 Peak diode recovery voltage slope VISO Tj 14 (1) 14 15 A A A W V/ns 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 14 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Table 4. TO-247 1.14 62.5 50 TO-220FP 4.17 °C/W 62.5 °C/W 300 °C Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 7 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50 V) 208 mJ Doc ID 17079 Rev 1 3/15 Electrical characteristics 2 STF19NM50N, STP19NM50N, STW19NM50N Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 500 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) 10 µA 3 4 V 0.2 0.25 Ω Min. Typ. Max. Unit - 1000 72 3 - pF pF pF - 104 - pF - 51 - pF - 4.4 - Ω - 34 5 18 - nC nC nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 6. Symbol Ciss Coss Crss 2 VGS = 10 V, ID = 7 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 VDS = 0 to 400 V, VGS = 0 RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 14 A, VGS = 10 V (see Figure 19) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/15 Doc ID 17079 Rev 1 STF19NM50N, STP19NM50N, STW19NM50N Table 7. Symbol td(on) tr td(off) tf Table 8. Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 250 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 20) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 12 16 61 17 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 14 56 A A ISD = 14 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 14 A, di/dt = 100 A/µs VDD = 60 V (see Figure 23) - 296 3.5 23 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 14 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 23) - 346 4 24 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 17079 Rev 1 5/15 Electrical characteristics STF19NM50N, STP19NM50N, STW19NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Thermal impedance for TO-220 Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 !-V O N S $3 /P ,IM ERA ITE TION D IN BY TH M IS AX AR 2 E A IS )$ ! Figure 3. S S MS 4J # 4C # MS 3INGLE PULSE Figure 4. Safe operating area for TO-220FP !-V )$ ! 6$36 S IS A RE A IS TH 2 IN AX N IO YM T RA B PE ED / MIT ,I N S O 3 $ S MS MS 4J # 4C # 3INGLE PULSE Figure 6. 6$36 Safe operating area for TO-247 !-V )$ ! S S ON /P ,IM ERA ITE TION D IN BY TH M IS AX AR 2 EA IS $3 S MS MS 4J # 4C # 3INGLE PULSE 6/15 6$36 Doc ID 17079 Rev 1 STF19NM50N, STP19NM50N, STW19NM50N Figure 8. Output characteristics )$ ! Electrical characteristics Figure 9. !-V 6'36 Transfer characteristics !-V )$ ! 6$36 6 6 6$36 6'36 Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance !-V 6'3 6 6$3 2$3ON /HM 6$$6 6'3 )$! 1GN# Figure 12. Capacitance variations 6'36 )$! Figure 13. Output capacitance stored energy !-V # P& !-V !-V %OSS * #ISS #OSS #RSS 6$36 Doc ID 17079 Rev 1 6$36 7/15 Electrical characteristics STF19NM50N, STP19NM50N, STW19NM50N Figure 14. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM Figure 15. Normalized on resistance vs temperature !-V 2$3ON NORM 4* # Figure 16. Source-drain diode forward characteristics 4* # 4* # 4* # Figure 17. Normalized BVDSS vs temperature !-V 63$ 6 !-V "6$33 NORM 4* # 8/15 )3$! Doc ID 17079 Rev 1 4* # STF19NM50N, STP19NM50N, STW19NM50N 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 17079 Rev 1 10% AM01473v1 9/15 Package mechanical data 4 STF19NM50N, STP19NM50N, STW19NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 17079 Rev 1 STF19NM50N, STP19NM50N, STW19NM50N Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 24. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 17079 Rev 1 11/15 Package mechanical data STF19NM50N, STP19NM50N, STW19NM50N TO-247 mechanical data Dim. mm. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 L1 3.70 L2 14.80 4.30 18.50 øP 3.55 øR 4.50 S 12/15 Typ. 3.65 5.50 5.50 Doc ID 17079 Rev 1 STF19NM50N, STP19NM50N, STW19NM50N Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 17079 Rev 1 13/15 Revision history 5 STF19NM50N, STP19NM50N, STW19NM50N Revision history Table 10. 14/15 Document revision history Date Revision 09-Feb-2010 1 Changes First release Doc ID 17079 Rev 1 STF19NM50N, STP19NM50N, STW19NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 17079 Rev 1 15/15