T630W 6 A Snubberless™ Triac Features ■ IT(RMS) = 6 A ■ VDRM = VRRM = 600 and 800 V A2 G A1 Description The high commutation performance of this device is based on Snubberless technology from ST. The T630W is especially suited for high inductance loads. This device complies with UL standards (Ref. E81734). A1 A2 ISOWATT220AB (Plastic) Table 1. February 2010 G Device summary Symbol Value Unit IT(RMS) 6 A VDRM/VRRM 600 and 800 V IGT 30 mA Doc ID 3764 Rev 3 1/8 www.st.com 8 Characteristics 1 T630W Characteristics Table 2. Absolute ratings (limiting values) Symbol IT(RMS) Parameter On-state rms current (full sine wave) Value Unit Tc = 105°C 6 A Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 80 F = 60 Hz t = 16.7 ms 84 I²t Value for fusing tp = 10 ms 36 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C ITSM I²t PG(AV) Tstg Tj Table 3. Average gate power dissipation Storage junction temperature range Operating junction temperature range Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol IGT (1) VGT A Test conditions Quadrant VD = 12 V RL = 30 Ω VGD VD = VDRM RL = 3.3 kΩ IH (2) IT = 100 mA IL IG = 1.2 IGT Tj = 125 °C Unit I - II - III Max. 30 mA I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 50 mA I - III dV/dt (2) Value 70 Max. II VD = 67 %VDRM gate open (dI/dt)c (2) Without snubber mA 80 Tj = 125 °C Min. 500 V/µs Tj = 125 °C Min. 4.5 A/ms Value Unit 1. Minimum IGT is guaranted at 5% of IGT max. 2. For both polarities of A2 referenced to A1 Table 4. Static characteristics Symbol Test conditions VT (1) ITM = 8.5 A Vt0 (1) tp = 380 µs Tj = 25 °C Max. 1.4 V Threshold voltage Tj = 125 °C Max. 0.85 V Rd (1) Dynamic resistance Tj = 125 °C Max. 50 mΩ IDRM IRRM 5 µA VDRM = VRRM 1 mA Tj = 25 °C Tj = 125 °C 1. For both polarities of A2 referenced to A1 2/8 Doc ID 3764 Rev 3 Max. T630W Characteristics Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) (360° conduction angle) 3.4 °C/W Rth(j-a) Junction to ambient 50 °C/W Figure 1. Maximum power dissipation versus Figure 2. rms on-state current P(W) On-state rms current versus case temperature IT(RMS)(A) 7 7 α=180° α=180° 6 6 5 5 4 4 3 3 2 2 180° α α 1 1 TC(°C) IT(RMS)(A) 0 0 0.0 0.5 Figure 3. 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Relative variation of thermal impedance versus pulse duration 0 25 Figure 4. K=[Zth/Rth] 50 75 100 125 On-state characteristics (maximum values) ITM(A) 1.E+00 100 Tj max. Vt0 = 0.85V Rd = 50 mΩ Zth(j-c) Zth(j-a) 1.E-01 Tj = Tj max. 10 1.E-02 Tj = 25°C VTM(V) tp(s) 1 1.E-03 1.E-03 Figure 5. 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 1.E+03 1 Surge peak on-state current versus Figure 6. number of cycles 2 4 5 6 Non-repetitive surge peak on-state current for a sinusoidal 2 ITSM(A) 3 2 ITSM(A), I t (A s) 90 1000 Tj initial=25°C 80 t=20ms 70 One cycle 60 dI/dt limitation: 50A/µs Non repetitive Tj initial=25°C 50 ITSM 100 40 Repetitive TC=105°C I2t 30 20 2 Pulse with width tp < 10 ms and corresponding value of I t 10 Number of cycles 0 tp(ms) 10 1 10 100 1000 0.01 Doc ID 3764 Rev 3 0.10 1.00 10.00 3/8 Characteristics Figure 7. T630W Relative variation of gate trigger current, holding current and latching Figure 8. IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] Relative variation of critical rate of decrease of main current versus reapplied (dV/dt)c (typical value) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 3.0 2.0 Current versus junction temperature (typical values) 2.5 1.8 1.6 1.4 2.0 1.2 IGT 1.5 1.0 0.8 1.0 IH & I L 0.6 0.4 0.5 0.2 Tj(°C) (dV/dt) (V/µs) 0.0 0.0 -40 -30 -20 -10 Figure 9. 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.1 1.0 10.0 Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C] 8 7 6 5 4 3 2 1 Tj(°C) 0 0 4/8 25 50 75 Doc ID 3764 Rev 3 100 125 100.0 T630W 2 Ordering information scheme Ordering information scheme Figure 10. Ordering information scheme T 6 30 - x00 W Triac series Current 6 = 6A Sensitivity 30 = 30mA Voltage 600 = 600V 800 = 800V Package W = ISOWATT220AB Doc ID 3764 Rev 3 5/8 Package information 3 T630W Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. ISOWATT220AB dimensions Dimensions Ref. A B H Dia L6 L2 L7 L3 F2 F1 D L4 F E Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.40 2.70 0.094 0.106 H 10.00 10.40 0.394 0.409 L2 16.00 typ. 0.630 typ. G1 G 6/8 Doc ID 3764 Rev 3 L3 28.60 30.60 1.125 1.205 L4 9.80 10.60 0.386 0.417 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.126 T630W 4 Ordering information Ordering information Table 7. 5 Ordering information Order code Marking T630-600W T630600W T630-800W T630800W Package Weight Base qty Delivery mode ISOWATT220AB 2.3 g 50 Tube Revision history Table 8. Document revision history Date Revision Changes March-2004 2 Last release. 09-Feb-2010 3 Document split into T620W and T630W. This document provides information for the T630W. Doc ID 3764 Rev 3 7/8 T630W Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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