VN750PS-E High-side driver Features Type RDS(on) IOUT VCC VN750PS-E 60 mΩ 6A 36 V ■ ECOPACK® : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection ■ Shorted load protection ■ Undervoltage and overvoltage shutdown ■ Protection against loss of ground ■ Very low standby current ■ Reverse battery protection SO-8 Description The VN750PS-E is a monolithic device designed in STMicroelectronics™ VIPower™ M0-3 Technology intended for driving any kind of load with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). Active current limitation combined with thermal shutdown and automatic restart help protect the device against overload. The device detects open load condition in on and off-state. Output shorted to VCC is detected in the off-state. Device automatically turns off in case of ground pin disconnection. Table 1. Device summary Order codes Package SO-8 October 2010 Doc ID 16782 Rev 2 Tube Tape and reel VN750PS-E VN750PSTR-E 1/27 www.st.com 1 Contents VN750PS-E Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.5 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 16 2.6 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.7 Microcontroller I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.8 Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.9 SO-8 maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . 19 Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 3.1 4 5 2/27 SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.1 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.2 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Doc ID 16782 Rev 2 VN750PS-E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 5 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical transient requirements on VCC pin (part 1/3). . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical transient requirements on VCC pin (part 2/3). . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical transient requirements on VCC pin (part 3/3). . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Doc ID 16782 Rev 2 3/27 List of figures VN750PS-E List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. 4/27 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Status timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Off-state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Status low output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Status clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 On-state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 On-state resistance vs VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Open-load on-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Open-load off-state voltage detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Ilim vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 SO-8 maximum turn-off current versus inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 20 SO-8 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Thermal fitting model of a single channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Doc ID 16782 Rev 2 VN750PS-E 1 Block diagram and pin description Block diagram and pin description Figure 1. Block diagram VCC OVERVOLTAGE DETECTION VCC CLAMP UNDERVOLTAGE DETECTION GND Power CLAMP DRIVER OUTPUT LOGIC INPUT CURRENT LIMITER ON-STATE OPEN-LOAD DETECTION STATUS OVER TEMPERATURE DETECTION Figure 2. OFF-STATE OPEN-LOAD AND OUTPUT SHORTED TO VCC DETECTION Configuration diagram (top view) VCC OUTPUT OUTPUT VCC 5 4 8 1 N.C. STATUS INPUT GND SO-8 Table 2. Suggested connections for unused and not connected pins Connection/pin Status N.C. Output Input Floating X X X X To ground X Doc ID 16782 Rev 2 Through 10 KΩ resistor 5/27 Electrical specifications 2 VN750PS-E Electrical specifications Figure 3. Current and voltage conventions IS VF IIN VCC INPUT ISTAT IOUT STATUS VCC OUTPUT GND VIN VSTAT 2.1 VOUT IGND Absolute maximum ratings Stress values that exceed those listed in the “Absolute maximum ratings” table can cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions greater than those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics sure program and other relevant quality documents. Table 3. Absolute maximum ratings Symbol 6/27 Parameter Value Unit 41 V VCC DC supply voltage -VCC Reverse DC supply voltage - 0.3 V -Ignd DC reverse ground pin current - 200 mA IOUT DC output current Internally limited A -IOUT Reverse DC output current -6 A IIN DC input current +/-10 mA ISTAT DC status current +/- 10 mA VESD Electrostatic discharge (human body model: R = 1.5 KΩ; C = 100 pF) - Input - Status - Output - VCC 4000 4000 5000 5000 V V V V Doc ID 16782 Rev 2 VN750PS-E Electrical specifications Table 3. Absolute maximum ratings (continued) Symbol Parameter EMAX Ptot Unit Maximum switching energy (L = 1.8 mH; RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C; IL = 9 A) 100 mJ Power dissipation TC = 25 °C 4.2 W Internally limited °C Tj Junction operating temperature Tc Case operating temperature - 40 to 150 °C Storage temperature - 55 to 150 °C Tstg 2.2 Value Thermal data Table 4. Thermal data Symbol Parameter Max. value Unit Rthj-lead Thermal resistance junction-lead 30 °C/W 93(1) °C/W 82(2) °C/W Rthj-amb Thermal resistance junction-ambient 2 1. When mounted on a standard single-sided FR-4 board with 0.5 cm of Cu (at least 35 µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow. 2. When mounted on a standard single-sided FR-4 board with 2 cm2 of Cu (at least 35 µm thick) connected to all VCC pins. Horizontal mounting and no artificial air flow. Doc ID 16782 Rev 2 7/27 Electrical specifications 2.3 VN750PS-E Electrical characteristics Values specified in this section are for 8 V < VCC < 36 V; -40 °C < Tj < 150 °C, unless otherwise stated. Table 5. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Power VCC Operating supply voltage 5.5 13 36 V VUSD Undervoltage shutdown 3 4 5.5 V VUSDhyst Undervoltage shutdown hysteresis VOV Overvoltage shutdown RON IS On-state resistance Supply current 0.5 V 36 V IOUT = 2 A; Tj = 25 °C; VCC > 8 V 60 mΩ IOUT = 2 A; VCC>8 V 120 mΩ Off-state; VCC = 13 V; VIN = VOUT = 0 V 10 25 µA Off-state; VCC = 13 V; VIN = VOUT = 0 V; Tj = 25 °C 10 20 µA On-state; VCC = 13 V; VIN = 5 V; IOUT = 0 A 2 3.5 mA 0 50 µA -75 0 µA IL(off1) Off-state output current VIN = VOUT = 0 V IL(off2) Off-state output current VIN = 0 V; VOUT = 3.5 V IL(off3) Off-state output current VIN = VOUT = 0 V; VCC = 13 V; Tj = 125 °C 5 µA IL(off4) Off-state output current VIN = VOUT = 0 V; VCC = 13 V; Tj = 25 °C 3 µA Switching (VCC = 13V) td(on) Turn-on delay time RL = 6.5 Ω from VIN rising edge to VOUT = 1.3 V 40 µs td(off) Turn-off delay time RL = 6.5 Ω from VIN falling edge to VOUT = 11.7 V 30 µs dVOUT/dt(on) Turn-on voltage slope RL = 6.5 Ω from VOUT = 1.3 V to VOUT = 10.4 V See Figure 21 V/µs dVOUT/dt(off) Turn-off voltage slope RL = 6.5 Ω from VOUT = 11.7 V to VOUT = 1.3 V See Figure 22 V/µs Input pin 8/27 VIL Input low level IIL Low level input current VIH Input high level 1.25 VIN = 1.25 V Doc ID 16782 Rev 2 V 1 µA 3.25 V VN750PS-E Table 5. Electrical specifications Electrical characteristics (continued) Symbol Parameter IIH High level input current Vhyst Input hysteresis voltage VICL Input clamp voltage Test conditions Min. Typ. VIN = 3.25 V Max. Unit 10 µA 0.5 IIN = 1 mA 6 IIN = -1 mA V 6.8 8 -0.7 V V VCC output diode VF Forward on voltage -IOUT = 1.3 A; Tj = 150 °C 0.6 V VSTAT Status low output voltage ISTAT = 1.6 mA 0.5 V ILSTAT Status leakage current Normal operation; VSTAT = 5 V 10 µA CSTAT Status pin input capacitance Normal operation; VSTAT = 5 V 100 pF 8 V VSCL Status clamp voltage Status pin ISTAT = 1 mA 6 ISTAT = -1 mA 6.8 -0.7 V Protections(1) TTSD Shutdown temperature 150 TR Reset temperature 135 Thyst Thermal hysteresis 7 tSDL Status delay in overload condition Ilim Current limitation Vdemag 175 6 15 9 5 V<VCC<36 V Turn-off output clamp voltage IOUT = 2 A; VIN = 0 V; L = 6 mH VCC-41 °C °C Tj>Tjsh 9 V<VCC<36 V 200 VCC-48 °C 20 ms 15 A 15 A VCC-55 V 200 mA 200 µs 3.5 V 1000 µs Open-load detection IOL Open-load on-state detection threshold VIN = 5 V tDOL(on) Open-load on-state detection delay IOUT = 0 A VOL Open-load off-state voltage detection threshold VIN = 0 V tDOL(off) Open-load detection delay at turn-off 50 1.5 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device operates under abnormal conditions this software must limit the duration and number of activation cycles. Doc ID 16782 Rev 2 9/27 Electrical specifications Figure 4. VN750PS-E Status timings OPEN-LOAD STATUS TIMING (with external pull-up) IOUT< IOL VOUT > VOL OVERTEMP STATUS TIMING Tj > Tjsh VIN VIN VSTAT VSTAT tDOL(off) Figure 5. tDOL(on) tSDL tSDL Switching time waveforms VOUT 90% 80% dVOUT/dt(off) dVOUT/dt(on) 10% t VIN td(on) td(off) t Table 6. 10/27 Truth table Conditions Input Output Status Normal operation L H L H H H Current limitation L H H L X X H (Tj < TTSD) H (Tj > TTSD) L Over temperature L H L L H L Undervoltage L H L L X X Overvoltage L H L L H H Doc ID 16782 Rev 2 VN750PS-E Electrical specifications Table 6. Truth table (continued) Conditions Input Output Status Output voltage > VOL L H H H L H Output current < IOL L H L H H L Table 7. Electrical transient requirements on VCC pin (part 1/3) Test levels ISO T/R 7637/1 test pulse I II III IV Delays and impedance 1 -25 V -50 V -75 V -100 V 2 ms 10 Ω 2 +25 V +50 V +75 V +100 V 0.2 ms 10 Ω 3a -25 V -50 V -100 V -150 V 0.1 µs 50 Ω 3b +25 V +50 V +75 V +100 V 0.1 µs 50 Ω 4 -4 V -5 V -6 V -7 V 100 ms, 0.01 Ω 5 +26.5 V +46.5 V +66.5 V +86.5 V 400 ms, 2 Ω Table 8. Electrical transient requirements on VCC pin (part 2/3) Test levels results ISO T/R 7637/1 test pulse I II III IV 1 C C C C 2 C C C C 3a C C C C 3b C C C C 4 C C C C 5 C E E E Table 9. Class Electrical transient requirements on VCC pin (part 3/3) Contents C All functions of the device are performed as designed after exposure to disturbance. E One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device. Doc ID 16782 Rev 2 11/27 Electrical specifications Figure 6. VN750PS-E Waveforms NORMAL OPERATION INPUT LOAD VOLTAGE STATUS UNDERVOLTAGE VUSDhyst VCC VUSD INPUT LOAD VOLTAGE STATUS undefined OVERVOLTAGE VCC<VOV VCC>VOV VCC INPUT LOAD VOLTAGE STATUS OPEN LOAD with external pull-up INPUT VOUT>VOL LOAD VOLTAGE VOL STATUS OPEN LOAD without external pull-up INPUT LOAD VOLTAGE STATUS Tj TTSD TR OVER TEMPERATURE INPUT LOAD CURRENT STATUS 12/27 Doc ID 16782 Rev 2 VN750PS-E 2.4 Electrical specifications Electrical characteristics curves Figure 7. Off-state output current Figure 8. High level input current Iih (uA) IL(off1) (uA) 7 3 6 2.5 Vin=3.25V Off state Vcc=36V Vin=Vout=0V 2 5 1.5 4 1 3 0.5 2 0 1 -0.5 0 -1 -50 -25 0 25 50 75 100 125 150 -50 175 -25 0 25 Figure 9. 50 75 100 125 150 175 Tc (ºC) Tc (ºC) Input clamp voltage Figure 10. Status leakage current Ilstat (uA) Vicl (V) 0.05 8 7.8 Iin=1mA 7.6 0.04 Vstat=5V 7.4 0.03 7.2 7 6.8 0.02 6.6 6.4 0.01 6.2 6 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (°C) Figure 11. 50 75 100 125 150 175 Tc (°C) Status low output voltage Figure 12. Status clamp voltage Vscl (V) Vstat (V) 8 0.6 7.8 0.5 Istat=1mA 7.6 Istat=1.6mA 7.4 0.4 7.2 7 0.3 6.8 0.2 6.6 6.4 0.1 6.2 0 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 6 -50 -25 0 25 50 75 100 125 150 175 Tc (°C) Doc ID 16782 Rev 2 13/27 Electrical specifications VN750PS-E Figure 13. On-state resistance vs Tcase Figure 14. On-state resistance vs VCC Ron (mOhm) Ron (mOhm) 140 120 110 120 Iout=2A Vcc=8V; 13V; 36V 100 Iout=2A 100 Tc= 150°C 90 80 80 Tc= 125°C 70 60 60 50 40 Tc= 25°C 40 20 Tc= - 40°C 30 0 20 -50 -25 0 25 50 75 100 125 150 175 5 10 15 20 Tc (ºC) 25 30 35 40 Vcc (V) Figure 15. Open-load on-state detection Figure 16. Input high level threshold Iol (mA) Vih (V) 220 3.6 200 3.4 Vcc=13V Vin=5V 180 3.2 160 140 3 120 2.8 100 2.6 80 60 2.4 40 2.2 20 0 2 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC) 50 75 100 125 150 175 Tc (ºC) Figure 17. Input low level Figure 18. Input hysteresis voltage Vil (V) Vhyst (V) 2.8 1.5 2.6 1.4 1.3 2.4 1.2 2.2 1.1 2 1 1.8 0.9 1.6 0.8 1.4 0.7 1.2 0.6 1 0.5 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 14/27 -50 -25 0 25 50 75 Tc (ºC) Doc ID 16782 Rev 2 100 125 150 175 VN750PS-E Electrical specifications Figure 19. Overvoltage shutdown Figure 20. Open-load off-state voltage detection threshold Vol (V) Vov (V) 50 5 48 4.5 Vin=0V 46 4 44 3.5 42 3 40 38 2.5 36 2 34 1.5 32 1 30 -50 -25 0 25 50 75 100 125 150 -50 175 -25 0 25 50 75 100 125 150 175 Tc (ºC) Tc (°C) Figure 21. Turn-on voltage slope Figure 22. Turn-off voltage slope dVout/dt/(on) (V/ms) dVout/dt(off) (V/ms) 1000 500 900 450 Vcc=13V Rl=6.5Ohm 800 Vcc=13V Rl=6.5Ohm 400 700 350 600 300 500 250 400 200 300 150 200 100 100 50 0 0 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Figure 23. Ilim vs Tcase Ilim (A) 20 18 Vcc=13V 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) Doc ID 16782 Rev 2 15/27 Electrical specifications VN750PS-E Figure 24. Application schematic +5V +5V VCC Rprot STATUS Dld μC Rprot INPUT OUTPUT GND VGND 2.5 RGND DGND GND protection network against reverse battery Solution 1: resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1. RGND ≤ 600 mV / (IS(on)max). 2. RGND ≥ (−VCC) / (−IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the device datasheet. Power dissipation in RGND (when VCC < 0: during reverse battery situations) is: PD = (−VCC)2/RGND This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not shared by the device ground then the RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift varies depending on how many devices are on in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then ST suggests to utilize solution 2 (see below). Solution 2: diode (DGND) in the ground line A resistor (RGND =1 kΩ) should be inserted in parallel to DGND if the device drives an inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift (≈600 mV) in the input threshold and in the status output values if the microprocessor ground is not common to the 16/27 Doc ID 16782 Rev 2 VN750PS-E Electrical specifications device ground. This shift will not vary if more than one HSD shares the same diode/resistor network. Series resistor in input and status lines are also required to prevent that, during battery voltage transient, the current exceeds the absolute maximum rating. Safest configuration for unused input and status pin is to leave them unconnected. 2.6 Load dump protection Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the VCC max DC rating. The same applies if the device is subject to transients on the VCC line that are greater than the ones shown in the ISO 7637-2: 2004(E) table. 2.7 Microcontroller I/Os protection If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the microcontroller I/O pins to latch-up. The value of these resistors is a compromise between the leakage current of microcontroller and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of microcontroller I/Os. -VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax Calculation example: For VCCpeak = - 100 V and Ilatchup ≥ 20 mA; VOHµC ≥ 4.5 V 5 kΩ ≤ Rprot ≤ 65 kΩ. Recommended values: Rprot = 10 kΩ. 2.8 Open-load detection in off-state Off-state open-load detection requires an external pull-up resistor (RPU) connected between output pin and a positive supply voltage (VPU) like the +5V line used to supply the microprocessor. The external resistor has to be selected according to the following requirements: 1. no false open-load indication when load is connected: in this case we have to avoid VOUT to be higher than VOlmin; this results in the following condition VOUT = (VPU / (RL + RPU))RL < VOlmin. 2. no misdetection when load is disconnected: in this case the VOUT has to be higher than VOLmax; this results in the following condition RPU < (VPU – VOLmax) / IL(off2). Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pullup resistor RPU should be connected to a supply that is switched off when the module is in standby. The values of VOLmin, VOLmax and IL(off2) are available in the electrical characteristics section. Doc ID 16782 Rev 2 17/27 Electrical specifications VN750PS-E Figure 25. Open-load detection in off-state V batt. VPU VCC RPU INPUT DRIVER + LOGIC IL(off2) OUT + STATUS R VOL GROUND 18/27 Doc ID 16782 Rev 2 RL VN750PS-E 2.9 Electrical specifications SO-8 maximum demagnetization energy (VCC = 13.5 V) Figure 26. SO-8 maximum turn-off current versus inductance ILMAX (A) 100 10 A B C 1 0.1 1 10 100 L(mH) A: Tjstart = 150 °C single pulse B: Tjstart = 100 °C repetitive pulse C: Tjstart = 125 °C repetitive pulse VIN, IL Demagnetization Demagnetization Demagnetization t Note: Values are generated with RL =0 Ω.In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves A and B. Doc ID 16782 Rev 2 19/27 Package and PCB thermal data VN750PS-E 3 Package and PCB thermal data 3.1 SO-8 thermal data Figure 27. PC board . Note: Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm, Cu thickness=35 µm, Copper areas: 0.14 cm2, 0.8 cm2, 2 cm2). Figure 28. Rthj-amb vs PCB copper area in open box free air condition RTHj_amb (ºC/W) SO-8 at 2 pins connected to TAB 110 105 100 95 90 85 80 75 70 0 0.5 1 1.5 PCB Cu heatsink area (cm^2) 20/27 Doc ID 16782 Rev 2 2 2.5 VN750PS-E Package and PCB thermal data Figure 29. SO-8 thermal impedance junction ambient single pulse ZTH (°C/W) 1000 0.5 cm2 100 2 cm2 10 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 Time (s) 10 100 1000 Equation 1: pulse calculation formula Z THδ = R TH ⋅δ+Z THtp (1 – δ) where δ = tP/T Figure 30. Thermal fitting model of a single channel Doc ID 16782 Rev 2 21/27 Package and PCB thermal data Table 10. 22/27 VN750PS-E Thermal parameter Area/island (cm2) 0.5 R1 (°C/W) 0.05 R2 (°C/W) 0.8 R3 (°C/W) 3.5 R4 (°C/W) 21 R5 (°C/W) 16 R6 (°C/W) 58 C1 (W·s/°C) 0.006 C2 (W·s/°C) 0.0026 C3 (W·s/°C) 0.0075 C4 (W·s/°C) 0.045 C5 (W·s/°C) 0.35 C6 (W·s/°C) 1.05 Doc ID 16782 Rev 2 2 28 2 VN750PS-E 4 Package and packing information Package and packing information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 SO-8 package information Figure 31. SO-8 package dimensions 0016023 D Doc ID 16782 Rev 2 23/27 Package and packing information Table 11. VN750PS-E SO-8 mechanical data mm Dim. Min. Typ. A Max. 1.75 A1 0.10 A2 1.25 b 0.28 0.48 c 0.17 0.23 (1) 4.80 4.90 5.00 E 5.80 6.00 6.20 E1(2) 3.80 3.90 4.00 D e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 k 1.04 0° ccc 8° 0.10 1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both side). 2. Dimension “E1” does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25 mm per side. 24/27 Doc ID 16782 Rev 2 VN750PS-E 4.2 Package and packing information SO-8 packing information The devices can be packed in tube or tape and reel shipments (see the Device summary on page 1). Figure 32. SO-8 tube shipment (no suffix) B Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) C A 100 2000 532 3.2 6 0.6 All dimensions are in mm. Figure 33. SO-8 tape and reel shipment (suffix “TR”) Reel dimensions Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4 All dimensions are in mm. Tape dimensions According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (+0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) 12 4 8 1.5 1.5 5.5 4.5 2 All dimensions are in mm. End Start Top No components Components No components cover tape 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed Doc ID 16782 Rev 2 25/27 Revision history 5 VN750PS-E Revision history Table 12. Document revision history Date Revision 23-Nov-2009 1 Initial release. 2 Updated Table 4: Thermal data Updated following figure titles: – Figure 21: Turn-on voltage slope – Figure 22: Turn-off voltage slope 15-Oct-2010 26/27 Changes Doc ID 16782 Rev 2 VN750PS-E Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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