VN05NSP HIGH SIDE SMART POWER SOLID STATE RELAY T YPE V DSS R DS(on) I OUT V CC VN05NSP 60 V 0.18 Ω 13 A 26 V ■ ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 13 A @ Tc=25oC 5 V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VN05NSP is a monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. 10 1 PowerSO-10 BLOCK DIAGRAM June 1998 1/9 VN05NSP ABSOLUTE MAXIMUM RATING Symb ol Parameter Valu e Unit V (BR)DSS Drain-Source Breakdown Voltage 60 V Output Current (cont.) 13 A IR Reverse Output Current -13 A I IN Input Current ±10 mA I OUT -V CC Reverse Supply Voltage I STAT Status Current V ESD Electrostatic Discharge (1.5 kΩ, 100 pF) P tot Tj T s tg o Power Dissipation at T c ≤ 25 C V mA 2000 V 56 W Junction Operating Temperature -40 to 150 o Storage Temperature -55 to 150 o CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/9 -4 ±10 C C VN05NSP THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient ($) Max Max o 2.2 50 o C/W C/W ($) When mounted using minimum recommended pad size on FR-4 board ELECTRICAL CHARACTERISTICS (VCC = 13 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symb ol Parameter VCC Supply Voltage R on On State Resistance IS Supply Current Test Cond ition s Min. Typ . 7 I OUT = 6 A I OUT = 6 A Tj = 25 o C Tj ≥ 25 o C Off St ate On State Max. Un it 26 V 0.36 0.18 Ω Ω 50 15 µA mA Max. Un it SWITCHING Symb ol Parameter Test Cond ition s t d(on) Turn-on Delay Time Of Output Current I OUT = 6 A Resistive Load Input Rise T ime < 0.1 µs T j = 25 o C 15 µs Rise Time O f O utput Current I OUT = 6 A Resistive Load Input Rise T ime < 0.1 µs T j = 25 o C 30 µs Turn-off Delay Time O f I OUT = 6 A Resistive Load o Output Current Input Rise T ime < 0.1 µs T j = 25 C 20 µs Fall T ime Of Output Current I OUT = 6 A Resistive Load o Input Rise T ime < 0.1 µs T j = 25 C 10 µs (di/dt) on Turn-on Current Slope I OUT = 6 A I OUT = I OV 0.5 2 A/µs A/µs (di/dt) off Turn-off Current Slope I OUT = 6 A I OUT = I OV 2 4 A/µs A/µs Max. Un it 0.8 V (*) V tr t d(of f) tf Min. Typ . LOGIC INPUT Symb ol Parameter VI L Input Low Level Voltage VI H Input High Level Voltage V I(hyst.) Input Hysteresis Voltage I IN V ICL Test Cond ition s Min. Typ . 2 0.5 Input Current VI N = 5 V 250 Input Clamp Voltage I IN = 10 mA I IN = -10 mA 6 -0.7 V 500 µA V V PROTECTIONS AND DIAGNOSTICS Symb ol V STAT (•) V USD Parameter Status Voltage Output Low Under Voltage Shut Down Test Cond ition s Min. Typ . I STAT = 1.6 mA 6.5 Max. Un it 0.4 V V 3/9 VN05NSP ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (continued) Symb ol Parameter Test Cond ition s Min. V SCL (•) Status Clamp Voltage I STAT = 10 mA I STAT = -10 mA t SC Switch-off T ime in Short Circuit Condition at Start-Up R LOAD < 10 mΩ Tc = 25 o C I OV Over Current R LOAD < 10 mΩ -40 T c 125 C Typ . Max. 6 -0.7 1.5 o o Un it V V 5 ms 60 A I AV Average Current in Short Circuit I OL Open Load Current Level 5 T TSD Thermal Shut-down Temperature 140 o C TR Reset Temperature 125 o C R LOAD < 10 mΩ Tc = 85 C 1.4 A 180 mA (*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (•) Status determination > 100 µs after the switching edge. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. In short circuit conditions the protection reacts with virtually no delay, the sensor being located in the region of the die where the heat is generated. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). 4/9 The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). The undervoltage shutdown level is increased by VF . If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN05NSP TRUTH TABLE INPUT O UTPUT DIAGNOST IC Normal Operation L H L H H H O pen Circuit (No Load) H H L O ver-temperature H L L Under-voltage X L H Figure 1: Waveforms Figure 2: Over Current Test Circuit 5/9 VN05NSP Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/9 VN05NSP RDS(on) vs Junction Temperature RDS(on) Vs Supply Voltage RDS(on) Vs Output Current Input Voltage vs Junction Temperature Output Current Derating Open Load vs Junction Temperature 7/9 VN05NSP PowerSO-10 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 3.35 3.65 0.132 0.144 A1 0.00 0.10 0.000 0.004 B 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.300 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.300 E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 e 1.27 0.240 0.050 F 1.25 1.35 0.049 0.053 H 13.80 14.40 0.543 0.567 1.80 0.047 h 0.50 L 0.002 1.20 q 1.70 0.067 o α 0.071 8o 0 B 0.10 A B 10 5 e 0.25 B = = = E4 = = = 1 E1 = E3 = E2 = E = = = H 6 SEATING PLANE DETAIL ”A” A C M Q h D = D1 = = = SEATING PLANE A F A1 A1 L DETAIL ”A” α 0068039-C 8/9 VN05NSP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 9/9