TSB1386 Low Frequency PNP Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -30V BVCEO -20V IC -5A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) -0.35 @ IC / IB = -4A / -100mA (Typ.) Excellent DC current gain characteristics Part No. TSB1386CY RM Structure ● ● -0.35V @ IC / IB = -4A / -100mA Package Packing SOT-89 1Kpcs / 7” Reel Epitaxial Planar Type PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -20 -6 V V Collector Current DC Pulse -5 -10 (note1) 0.5 IC Collector Power Dissipation PD Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw=10ms, Duty≤50% 2. When mounted on a 40 x 50 x 0.7mm ceramic board. TJ TSTG A W o +150 - 55 to +150 o C C Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage IC = -50uA, IE = 0 IC = -1mA, IB = 0 BVCBO BVCEO -30 -20 --- --- V V Emitter-Base Breakdown Voltage Collector Cutoff Current IE = -50uA, IC = 0 VCB = -20V, IE = 0 BVEBO ICBO -6 -- --- --0.5 V uA Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VEB = -5V, IC = 0 IC / IB = -4A / -100mA IC / IB = -3A / -60mA IEBO VCE(SAT) VBE(SAT) ---- --0.35 -1.2 -0.5 -0.6 -1.5 uA V V DC Current Transfer Ratio VCE = -2V, IC = -500mA VCE =-6V, IE=-50mA, f=30MHz VCB = -5V, IE = 0, f=1MHz hFE 180 -- 390 fT -- 120 -- MHz Cob -- 60 -- pF Transition Frequency Output Capacitance Note: Pulse test; Pw≤350us, Duty≤2% 1/4 Version: A09 TSB1386 Low Frequency PNP Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic Figure 3. VBE(SAT) v.s. Ic Figure 4. Output Characteristics Figure 5. Output Characteristics Figure 6. Collector Input Capacitance vs. Veb 2/4 Version: A09 TSB1386 Low Frequency PNP Transistor SOT-89 Mechanical Drawing DIM A B C D E F G H I J SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code X = hFE rank code 3/4 Version: A09 TSB1386 Low Frequency PNP Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A09