CENTRAL CMLDM8005_13

CMLDM8005
SURFACE MOUNT SILICON
DUAL P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM8005
consists of dual P-Channel enhancement-mode silicon
MOSFETs designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer very low
rDS(ON) and low threshold voltage.
MARKING CODE: CC8
APPLICATIONS:
• Load switch/Level shifting
• Battery charging
• Boost switch
• Electro-luminescent backlighting
FEATURES:
• ESD protection up to 1800V (Human Body Model)
• 350mW power dissipation
• Very low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small, SOT-563 surface mount package
• Complementary dual N-Channel device: CMLDM7005
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
SYMBOL
VDS
20
VGS
ID
8.0
V
650
mA
IS
IDM
PD
250
mA
1.0
A
350
mW
PD
PD
300
mW
150
mW
TJ, Tstg
ΘJA
-65 to +150
°C
357
°C/W
SOT-563 CASE
Gate-Source Voltage
Continuous Drain Current (Steady State - Note 1)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
UNITS
V
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IGSSF, IGSSR VGS=4.5V, VDS=0
10
IDSS
VDS=16V, VGS=0
100
BVDSS
VGS(th)
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VSD
rDS(ON)
VGS=0, IS=250mA
VGS=4.5V, ID=350mA
rDS(ON)
VGS=2.5V, ID=300mA
VGS=1.8V, ID=150mA
rDS(ON)
20
UNITS
μA
nA
V
0.5
1.0
0.25
0.37
V
1.1
V
0.36
Ω
0.5
Ω
0.8
Ω
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R4 (5-June 2013)
CMLDM8005
SURFACE MOUNT SILICON
DUAL P-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
UNITS
gFS
VDS=10V, ID=200mA
0.2
S
Crss
VDS=16V, VGS=0, f=1.0MHz
25
pF
Ciss
Coss
Qg(tot)
Qgs
Qgd
ton
toff
VDS=16V, VGS=0, f=1.0MHz
VDS=16V, VGS=0, f=1.0MHz
VDS=10V, VGS=4.5V,
VDS=10V, VGS=4.5V,
VDS=10V, VGS=4.5V,
ID=200mA
ID=200mA
ID=200mA
VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω
VDD=10V, VGS=4.5V, ID=200mA, RG=10Ω
100
pF
21
pF
1.2
nC
0.24
nC
0.36
38
nC
ns
48
ns
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Source Q1
2) Gate Q1
3) Drain Q2
4) Source Q2
5) Gate Q2
6) Drain Q1
MARKING CODE: CC8
R4 (5-June 2013)
w w w. c e n t r a l s e m i . c o m
CMLDM8005
SURFACE MOUNT SILICON
DUAL P-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R4 (5-June 2013)
w w w. c e n t r a l s e m i . c o m