PROCESS CPD96V Schottky Diode 500mA Low VF Schottky Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 16.4 x 16.4 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 28,028 PRINCIPAL DEVICE TYPES CMLSH05-4 R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD96V Typical Electrical Characteristics R5 (22-March 2010) w w w. c e n t r a l s e m i . c o m