CENTRAL CPZ18_10

PROCESS
CPZ18
Zener Diode
0.5 Watt Zener Diode Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
13.8 x 13.8 MILS
Die Thickness
7.5 MILS
Anode Bonding Pad Area
7.5 x 7.5 MILS
Top Side Metalization
Al - 13,000Å
Back Side Metalization
Au - 14,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
61,141
PRINCIPAL DEVICE TYPES
CMPZ5221B
THRU
CMPZ5234B
BACKSIDE CATHODE
R6 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CPZ18
IZ, Reverse Current (µA)
Typical Electrical Characteristics
R6 (22-March 2010)
w w w. c e n t r a l s e m i . c o m