< IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .............….......................… 100A Collector-emitter voltage V CES ......................… 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 °C ●Flat base Type ●Copper base plate (non-plating) ●Tin plating pin terminals ●RoHS Directive compliant sixpack (3φ Inverter) ●Recognized under UL1557, File E323585 APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm TERMINAL t=0.8 SECTION A INTERNAL CONNECTION Tolerance otherwise specified P(30~32) P1(16~18) GUP(1) GVP(5) GWP(9) EUP(2) EVP(6) EWP(10) V(24~26) W(21~23) GUN(3) GVP(7) GWN(11) EUN(4) EVP(8) EWN(12) N(33~35) NTC U(27~29) TH1(19) TH2(20) N1(13~15) Publication Date : December 2013 1 Division of Dimension 0.5 to over 3 over 6 Tolerance 3 ±0.2 to 6 ±0.3 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ± 20 V IC Item DC, TC=107 °C Collector current ICRM Ptot (Note1) IERM (Note1) (Note2, 4) 100 (Note3) 200 Pulse, Repetitive Total power dissipation IE Conditions TC=25 °C DC Emitter current (Note2, 4) A 625 (Note2) W 100 Pulse, Repetitive (Note3) A 200 MODULE Rating Unit Visol Symbol Isolation voltage Item Terminals to base plate, RMS, f=60 Hz, AC 1 min Conditions 4000 V Tjmax Maximum junction temperature Instantaneous event (overload) 175 TCmax Maximum case temperature (Note4) 125 Tjop Operating junction temperature Continuous operation (under switching) -40 ~ +150 Tstg Storage temperature - -40 ~ +125 °C °C ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=10 mA, VCE=10 V 5.4 6.0 6.6 V T j =25 °C - 1.80 2.25 Refer to the figure of test circuit T j =125 °C - 2.00 - (Note5) T j =150 °C - 2.05 - IC=100 A, T j =25 °C - 1.70 2.15 VGE=15 V, T j =125 °C - 1.90 - (Note5) T j =150 °C - 1.95 - - - 10 - - 2.0 - - 0.17 - 210 - - - 300 - - 200 - - 600 IC=100 A, VGE=15 V, VCEsat (Terminal) Collector-emitter saturation voltage VCEsat (Chip) Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time VEC VCC=600 V, IC=100 A, VGE=15 V VCC=600 V, IC=100 A, VGE=±15 V, RG=6.2 Ω, Inductive load - - 300 T j =25 °C - 2.60 3.40 Refer to the figure of test circuit T j =125 °C - 2.16 - (Note5) T j =150 °C - 2.10 - IE=100 A, G-E short-circuited, (Note1) (Terminal) Emitter-collector voltage VEC VCE=10 V, G-E short-circuited (Note1) (Chip) IE=100 A, T j =25 °C - 2.50 3.30 G-E short-circuited, T j =125 °C - 2.06 - (Note5) T j =150 °C - 2.00 - V V nF nC ns V V trr (Note1) Reverse recovery time VCC=600 V, IE=100 A, VGE=±15 V, - - 300 ns Qrr (Note1) Reverse recovery charge RG=6.2 Ω, Inductive load - 2.7 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=100 A, - 5.9 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=6.2 Ω, T j =150 °C, - 9.7 - Reverse recovery energy per pulse Inductive load - 9.7 - mJ R CC'+EE' Internal lead resistance Main terminals-chip, per switch, TC=25 °C (Note4) - - 2.2 mΩ rg Internal gate resistance Per switch - 0 - Ω Err (Note1) Publication Date : December 2013 2 mJ < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified) NTC THERMISTOR PART Symbol Item Limits Conditions (Note4) R25 Zero-power resistance TC=25 °C ΔR/R Deviation of resistance R100=493 Ω, TC=100 °C B(25/50) B-constant Approximate by equation P25 Power dissipation TC=25 °C Typ. 4.85 5.00 5.15 kΩ -7.3 - +7.8 % - 3375 - K - - 10 mW (Note4) (Note6) (Note4) Max. Unit Min. THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Item Junction to case, per Inverter IGBT Thermal resistance Rth(j-c)D Rth(c-s) Limits Conditions Min. (Note4) (Note4) Junction to case, per Inverter DIODE Case to heat sink, per 1 module, Thermal grease applied (Note4, 7) Contact thermal resistance Typ. Max. - - 0.24 - - 0.37 - 15 - Unit K/W K/kW MECHANICAL CHARACTERISTICS Symbol Item Max. 2.5 3.0 3.5 N·m - 330 - g Terminal to terminal 16.3 - - Terminal to base plate 19.1 - - Terminal to terminal 10.3 - - Terminal to base plate 15.3 - - ±0 - +100 Mounting torque Mounting to heat sink m mass - Creepage distance da Clearance ec Flatness of base plate On the centerline X, Y Min. M 5 screw (Note8) Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE). 2. Junction temperature (T j ) should not increase beyond T j m a x rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. R 1 1 6. B( 25 / 50) = ln( 25 ) /( ), − R 50 T25 T50 -:Concave +:Convex R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K] 7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X mounting side mounting side mounting side Unit Typ. Ms ds Limits Conditions -:Concave +:Convex 9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "φ2.6×10 or φ2.6×12 B1 tapping screw" The length of the screw depends on the thickness (t1.6~t2.0) of the PCB. Publication Date : December 2013 3 mm mm μm < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS Symbol Item VCC Limits Conditions Min. Typ. Max. Unit (DC) Supply voltage Applied across P-N/P1-N1 terminals - 600 850 V VGEon Gate (-emitter drive) voltage Applied across G*P-E*P/G*N-E*N(*=U, V, W) terminals 13.5 15.0 16.5 V RG External gate resistance Per switch 6.2 - 62 Ω CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Tr*P/Tr*N: IGBT, Di*P/Di*N: DIODE (*=U/V/W), Th: NTC thermistor iE *: U, V, W P1 ～ ～ TEST CIRCUIT AND WAVEFORMS vGE P 90 % 0V G*P -VGE iE 0 Load IE E*P iC VCC 90 % RG G*N 0 vGE 0A 0.5×I r r 10% iC 0A -VGE N1 N tr td(on) tf td(off) Switching characteristics test circuit and waveforms t t r r , Q r r characteristics test waveform iE iC iC ICM vCE VCC 0.1×ICM 0.1×VCC 0 t Irr vCE E*N trr ～ ～ + * +VGE Q r r =0.5×I r r ×t r r t vEC VCC vCE VCC 0.1×VCC t IEM ICM 0.02×ICM 0 ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t 0A t 0V t ti DIODE Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) Publication Date : December 2013 4 < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT 16~18 VGE=15V 30~32 16~18 VGE=15V 1 30~32 16~18 VGE=15V 5 IC IC 6 V 10 V V 27~29 24~26 Shortcircuited 3 4 13~15 16~18 Shortcircuited 33~35 7 13~15 30~32 16~18 Shortcircuited 1 13~15 16~18 30~32 Shortcircuited VGE=15V IC 4 Gate-emitter GVP-EVP GVN-EVN, short-circuited GWP-EWP, GWN-EWN VGE=15V 11 IC IC 12 13~15 33~35 Gate-emitter GUP-EUP, GUN-EUN, short-circuited GWP-EWP, GWN-EWN UP / UN IGBT V 21~23 7 13~15 30~32 10 V 8 33~35 33~35 9 24~26 3 13~15 33~35 6 V 11 12 5 27~29 VGE=15V 21~23 Shortcircuited 8 2 9 IC 2 Shortcircuited 30~32 33~35 Gate-emitter GUP-EUP, GUN-EUN, short-circuited GVP-EVP, GVN-EVN VP / VN IGBT WP / WN IGBT V CE s a t characteristics test circuit 16~18 Shortcircuited 30~32 16~18 1 IE Shortcircuited 2 5 IE 24~25 3 4 13~15 16~18 33~35 7 13~15 30~32 16~18 Shortcircuited 1 Shortcircuited 30~32 16~18 Shortcircuited 13~15 33~35 Gate-emitter GVP-EVP GVN-EVN, short-circuited GWP-EWP, GWN-EWN Shortcircuited 9 V IE 11 12 33~35 13~15 Gate-emitter GUP-EUP, GUN-EUN, short-circuited GWP-EWP, GWN-EWN UP / UN DIODE 30~32 21~23 IE 7 33~35 10 V 8 4 13~15 13~15 24~26 IE 3 33~35 5 27~29 11 12 6 V IE 21~23 Shortcircuited 8 2 9 V 27~29 Shortcircuited 30~32 10 V Shortcircuited Shortcircuited 16~18 Shortcircuited 6 V Shortcircuited 30~32 33~35 Gate-emitter GUP-EUP, GUN-EUN, short-circuited GVP-EVP, GVN-EVN VP / VN DIODE WP / WN DIODE VEC characteristics test circuit Publication Date : December 2013 5 < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 °C VGE=15 V (Chip) (V) 200 15 V VCEsat VGE=20 V COLLECTOR-EMITTER SATURATION VOLTAGE 150 COLLECTOR CURRENT IC (A) 12 V 11 V 100 10 V 50 9V 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 10 3 T j =150 °C T j =125 °C 2.5 2 1.5 T j =25 °C 1 0.5 0 0 50 (V) 200 (A) G-E short-circuited (Chip) (Chip) 1000 IC=40 A T j =125 °C IE IC=100 A (A) IC=200 A 8 EMITTER CURRENT (V) 150 IC FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE 100 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C (Chip) 3.5 6 4 100 T j =150 °C T j =25 °C 2 0 10 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 VGE 18 0.5 20 (V) 1 1.5 2 2.5 EMITTER-COLLECTOR VOLTAGE Publication Date : December 2013 6 3 3.5 VEC (V) 4 < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C VCC=600 V, VGE=±15 V, IC=100 A, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 1000 td(off) td(off) tf (ns) SWITCHING TIME SWITCHING TIME (ns) tf 100 td(on) tr 10 100 td(on) tr 10 1 10 100 COLLECTOR CURRENT 1000 IC 1 (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 10 Eoff 10 EXTERNAL GATE RESISTANCE 100 RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, IC/IE=100 A, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 100 Err 0.1 10 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) 1 REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY (mJ) Eon 1 10 100 Eon 10 Eoff Err 1 1000 1 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 10 EXTERNAL GATE RESISTANCE Publication Date : December 2013 7 100 RG (Ω) < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART CAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 °C VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 100 Cies (ns), I r r CAPACITANCE (A) (nF) 10 1 Coes trr Cres 0.01 10 0.1 1 10 COLLECTOR-EMITTER VOLTAGE 100 VCE 10 1000 EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC=600 V, IC=100 A, Tj=25 °C Single pulse, TC=25 °C R t h ( j - c ) Q =0.24 K/W, R t h ( j - c ) D =0.37 K/W Zth(j-c) NORMALIZED TRANSIENT THERMAL RESISTANCE VGE 15 10 5 0 0 100 (V) 20 (V) 100 trr 0.1 GATE-EMITTER VOLTAGE Irr 50 100 150 GATE CHARGE 200 QG 250 300 (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 TIME Publication Date : December 2013 8 0.01 (S) 0.1 1 10 < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES NTC thermistor part TEMPERATURE CHARACTERISTICS (TYPICAL) 10 RESISTANCE R (kΩ) 100 1 0.1 -50 -25 0 25 50 TEMPERATURE T 75 100 125 (°C) Publication Date : December 2013 9 < IGBT MODULES > CM100TX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! 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