MITSUBISHI CM1500HC-66R

< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1500HC-66R






IC··········································································· 1500A
VCES···································································· 3300V
1-element in a Pack
Insulated Type
LPT-IGBT / Soft Recovery Diode
AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
December 2012 HVM-1054-D
Dimensions in mm
1
< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol
Item
VCES
Collector-emitter voltage
VGES
IC
ICRM
IE
IERM
Ptot
Viso
Ve
Tj
Tjop
Tstg
tpsc
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
VGE = 0V, Tj = -40…+150°C
VGE = 0V, Tj = −50°C
VCE = 0V, Tj = 25°C
DC, Tc = 95°C
(Note 1)
Pulse
DC
(Note 1)
Pulse
Tc = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC
Ratings
3300
3200
± 20
1500
3000
1500
3000
15600
6000
2600
−50 ~ +150
−50 ~ +150
−55 ~ +150
10
VCC = 2500V, VCE ≤ VCES, VGE =15V, Tj =150°C
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
s
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Tj = 25°C
Tj = 125°C
Tj = 150°C
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
VGE(th)
IGES
Cies
Coes
Cres
QG
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
VCE = 10 V, IC = 150 mA, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
VCEsat
Collector-emitter saturation voltage
td(on)
Turn-on delay time
tr
Turn-on rise time
Eon(10%)
Turn-on switching energy
(Note 5)
Eon
Turn-on switching energy
(Note 6)
td(off)
Turn-off delay time
tf
Turn-off fall time
Eoff(10%)
Turn-off switching energy
(Note 5)
Eoff
Turn-off switching energy
(Note 6)
December 2012 (HVM-1054-D)
VCE = 10 V, VGE = 0 V, f = 100 kHz
Tj = 25°C
VCC = 1800V, IC = 1500A, VGE = ±15V
IC = 1500 A
VGE = 15 V
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
(Note 4)
VCC = 1800 V
IC = 1500 A
VGE = ±15 V
RG(on) = 1.6 Ω
Ls = 100 nH
Inductive load
VCC = 1800 V
IC = 1500 A
VGE = ±15 V
RG(off) = 5.6 Ω
Ls = 100 nH
Inductive load
2
Min
—
—
—
5.7
−0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
6.0
36.0
6.2
—
210.0
13.0
6.0
16.0
2.45
3.10
3.25
1.00
0.95
0.95
0.28
0.30
0.30
2.10
2.75
3.00
2.20
2.90
3.20
2.70
2.80
2.85
0.30
0.35
0.40
2.00
2.45
2.50
2.20
2.70
2.80
Max
6.0
—
—
6.7
0.5
—
—
—
—
—
3.70
—
—
1.25
1.25
—
0.50
0.50
—
—
—
—
—
—
—
3.30
3.30
—
1.00
1.00
—
—
—
—
—
—
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J
J
µs
µs
J
J
< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Symbol
Item
VEC
Emitter-collector voltage
trr
Reverse recovery time
Conditions
(Note 2)
Reverse recovery current
(Note 2)
Qrr
Reverse recovery charge
(Note 2)
Erec
Reverse recovery energy
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
(Note 4)
(Note 2)
Irr
Erec(10%)
IE = 1500 A
VGE = 0 V
(Note 2)
VCC = 1800 V
IC = 1500 A
VGE = ±15 V
RG(on) = 1.6 Ω
Ls = 100 nH
Inductive load
(Note 5)
Reverse recovery energy
(Note 2)
(Note 6)
—
—
Limits
Typ
2.15
2.30
2.25
0.50
0.70
0.80
1250
1500
1550
1050
1700
2000
1.05
1.75
2.00
1.20
2.00
2.30
Min
—
—
—
Limits
Typ
—
—
6.0
Max
8.0
15.0
—
Min
7.0
3.0
1.0
—
600
19.5
32.0
—
—
—
Limits
Typ
—
—
—
1.2
—
—
—
11.0
0.12
1.5
Max
22.0
6.0
3.0
—
—
—
—
—
—
—
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
2.80
—
—
Unit
V
µs
—
—
—
—
—
A
µC
—
—
J
—
—
J
—
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to heat sink, grease = 1W/m·k, D(c-s) = 100m
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Mt
m
CTI
da
ds
LP CE
RCC’+EE’
rg
Item
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
TC = 25°C
TC = 25°C
Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating(150°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
December 2012 (HVM-1054-D)
3
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
Ω
< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
3000
3000
V CE = VGE
Tj = 150°C
2500
VGE = 19V
V GE = 11V
V GE = 15V
2000
V GE = 13V
1500
1000
VGE = 9V
Collector Current [A]
Collector Current [A]
2500
2000
1500
1000
Tj = 25°C
Tj = 150°C
500
500
0
0
0
1
2
3
4
5
6
0
Collector - Emitter Voltage [V]
2
4
6
8
10
12
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
3000
3000
V GE = 15V
2500
Tj = 125°C
Tj = 25°C
2000
Tj = 125°C
1500
Tj = 150°C
1000
500
Emitter Current [A]
Collector Current [A]
2500
Tj = 150°C
Tj = 25°C
2000
1500
1000
500
0
0
0
1
2
3
4
5
0
Collector-Emitter Saturation Voltage [V]
December 2012 (HVM-1054-D)
1
2
3
4
Emitter-Collector Voltage [V]
4
5
< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
1000
15
Gate-Emitter Voltage [V]
Capacitance [nF]
Cies
100
Coes
10
V CE = 1800V, IC = 1500A
Tj = 25°C
Cres
10
5
0
-5
-10
V GE = 0V, Tj = 25°C
f = 100kHz
1
-15
0.1
1
10
0
100
5
Collector-Emitter Voltage [V]
15
20
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
8
VCC = 1800V, VGE = ±15V
RG(on) = 1.6Ω, RG(off) = 5.6Ω
LS = 100nH, Tj = 125°C
7
VCC = 1800V, VGE = ±15V
RG(on) = 1.6Ω, RG(off) = 5.6Ω
LS = 100nH, Tj = 150°C
7
Eon
Inductive load
6
Eon
5
4
Eoff
3
2
Erec
1
Switching Energies [J/pulse]
Inductive load
Switching Energies [J/pulse]
10
6
5
4
Eoff
3
2
Erec
1
0
0
0
500
1000
1500
2000
2500
3000
0
Collector Current [A]
December 2012 (HVM-1054-D)
500
1000
1500
2000
Collector Current [A]
5
2500
3000
< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
8
8
VC C = 1800V, IC = 1500A
VGE = ±15V, LS = 100nH
VC C = 1800V, IC = 1500A
VGE = ±15V, LS = 100nH
7
Tj = 125°C, Inductive load
6
Eon
5
4
Eoff
3
2
Erec
Switching Energies [J/pulse]
Switching Energies [J/pulse]
7
1
Tj = 150°C, Inductive load
6
Eon
5
4
Eoff
3
2
Erec
1
0
0
0
2
4
6
8
10
12
0
2
Gate resistor [Ohm]
8
10
12
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
100
100
VCC = 1800V, VGE = ±15V
VCC = 1800V, VGE = ±15V
RG(on) = 1.6Ω, RG(off) = 5.6Ω
LS = 100nH, Tj = 150°C
RG(on) = 1.6Ω, RG(off) = 5.6Ω
LS = 100nH, Tj = 125°C
Inductive load
Inductive load
10
Switching Times [µs]
10
Switching Times [µs]
6
Gate resistor [Ohm]
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
td(off)
td(on)
1
tf
0.1
td(off)
td(on)
1
tr
0.1
tr
0.01
100
4
tf
1000
10000
0.01
100
Collector Current [A]
December 2012 (HVM-1054-D)
1000
Collector Current [A]
6
10000
< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
100
10000
RG(on) = 1.6Ω, LS = 100nH
Tj = 125°C, Inductive load
RG(on) = 1.6Ω, LS = 100nH
Tj = 150°C, Inductive load
Irr
10
1000
1
trr
0.1
100
100
Reverse Recovery Time [µs]
VCC = 1800V, VGE = ±15V
10
10000
1000
Irr
10
1000
1
trr
0.1
100
10
10000
1000
Emitter Current [A]
100
Emitter Current [A]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
Normalized Transient Thermal impedance
1.2
Rth(j-c)Q = 8.0K/kW
Rth(j-c)D = 15.0K/kW
1
 t 

  


(
t
)

  i 
1

exp

Z th ( j c ) 
R
i
i 1


n
0.8
0.6
Ri [K/kW] :
1
0.0096
2
0.1893
3
0.4044
4
0.3967
i [sec] :
0.0001
0.0058
0.0602
0.3512
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
December 2012 (HVM-1054-D)
7
Reverse Recovery Current [A]
10000
VCC = 1800V, VGE = ±15V
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
PERFORMANCE CURVES
< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
4000
20
VCC  2500V, V GE = ±15V
RG(on) = 1.6Ω, RG(off) = 5.6Ω
VC C  2500V, VGE = ±15V
Tj = 150°C, RG(off ) = 5.6Ω
Tj = 150°C
15
Collector Current [kA]
Collector Current [A]
3000
2000
1000
0
10
5
0
0
1000
2000
3000
4000
0
Collector-Emitter Voltage [V]
4000
Reverse Recovery Current [A]
VC C  2500V, di/dt < 9kA/µs
Tj = 150°C
3000
2000
1000
0
1000
2000
3000
4000
Emitter-Collector Voltage [V]
December 2012 (HVM-1054-D)
2000
3000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
0
1000
8
4000
< HVIGBT MODULES >
CM1500HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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December 2012 (HVM-1054-D)
9