< HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1200DC-34S IC ································································ 1200A VCES ·························································· 1700V 2-element in a Pack Insulated Type CSTBT™(III) / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Feb 2013 (HVM-1068) Dimensions in mm 1 < HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICRM IE IERM Ptot Viso Ve Tjop Tstg tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Operating junction temperature Storage temperature Short circuit pulse width Conditions VGE = 0V VCE = 0V, Tj = 25 °C DC, Tc = 110 °C Pulse (Note 1) DC Pulse (Note 1) Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Ratings 1700 ± 20 1200 2400 1200 2400 6750 4000 1320 −50 ~ +150 −50 ~ +150 10 VCC = 1200V, VCE ≤ VCES, VGE =15V, Tj =150°C Unit V V A A A A W V V °C °C s ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C Tj = 150°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres QG Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VCE = 10 V, IC = 120 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCEsat Collector-emitter saturation voltage td(on) Turn-on delay time tr Turn-on rise time Eon(10%) Turn-on switching energy (Note 5) Eon Turn-on switching energy (Note 6) Feb 2013 (HVM-1068) VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C VCC = 850V, IC = 1200A, VGE = ±15V Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C IC = 1200 A (Note 4) VGE = 15 V VCC = 850 V IC = 1200 A VGE = ±15 V RG(on) = 1.3 Ω Ls = 70 nH Inductive load 2 Min — — — 5.4 −0.5 — — — — — — — — — — — — — — — — — — — Limits Typ — 1.5 7.0 6.0 — 216 8.0 1.6 12.0 1.95 2.25 2.30 0.60 0.60 0.60 0.16 0.17 0.18 260 340 370 300 390 420 Max 4.0 — — 6.6 0.5 — — — — — 2.70 — — — — — — — — — — — — — Unit mA V µA nF nF nF µC V µs µs mJ mJ < HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ELECTRICAL CHARACTERISTICS (continuation) Symbol Item Conditions td(off) Turn-off delay time tf Turn-off fall time Eoff(10%) Turn-off switching energy (Note 5) Eoff Turn-off switching energy (Note 6) VEC Emitter-collector voltage (Note 2) trr Reverse recovery time Irr Reverse recovery current (Note 2) Qrr Reverse recovery charge (Note 2) Reverse recovery energy (Note 2) Erec(10%) Erec Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C VCC = 850 V IC = 1200 A VGE = ±15 V RG(off) = 3.3 Ω Ls = 70 nH Inductive load IE = 1200 A (Note 4) VGE = 0 V (Note 2) VCC = 850 V IC = 1200 A VGE = ±15 V RG(on) = 1.3 Ω Ls = 70 nH Inductive load (Note 5) Reverse recovery energy (Note 2) (Note 6) Min — — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Limits Typ 1.20 1.30 1.32 0.12 0.15 0.17 200 280 310 260 360 400 2.60 2.30 2.20 0.22 0.32 0.38 750 850 840 150 340 400 70 170 210 80 180 230 Max — — — — — — — — — — — — — 3.00 — — — — — — — — — — — — — — — — Min — — Limits Typ — — Max 18.5 42.0 K/kW K/kW — 16.0 — K/kW Unit µs µs mJ mJ V µs A µC mJ mJ THERMAL CHARACTERISTICS Symbol Item Rth(j-c)Q Rth(j-c)D Thermal resistance Rth(c-s) Contact thermal resistance Feb 2013 (HVM-1068) Conditions Junction to Case, IGBT part (per 1/2 module) Junction to Case, FWDi part (per 1/2 module) Case to heat sink, 1/2 module grease = 1W/m·k, D(c-s) = 100m 3 Unit < HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ rg Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw TC = 25°C, 1/2 module TC = 25°C, 1/2 module Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Tjopmax rating. 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjopmax rating . 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. Definition of all items is according to IEC 60747, unless otherwise specified. Feb 2013 (HVM-1068) 4 Min 7.0 3.0 1.0 — 600 9.5 15.0 — — — Limits Typ — — — 0.8 — — — 22 0.16 0.28 Max 22.0 6.0 3.0 — — — — — — — Unit N·m N·m N·m kg — mm mm nH mΩ Ω < HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 2500 2500 Tj = 125°C VCE = 10V VGE = 17V 2000 VGE = 11V VGE = 15V 1500 Collector Current [A] Collector Current [A] 2000 VGE = 13V VGE = 9V 1000 500 1500 Tj = 125°C / 150°C 1000 Tj = 25°C 500 0 0 0 1 2 3 4 5 6 0 Collector - Emitter Voltage [V] 5 10 15 Gate - Emitter Voltage [V] FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2500 2500 VGE = 15V Tj = 125°C Tj = 125°C 2000 Tj = 25°C Emitter Current [A] Collector Current [A] 2000 Tj = 150°C 1500 1000 500 1500 1000 Tj = 25°C Tj = 150°C 500 0 0 0 1 2 3 4 0 Collector-Emitter Saturation Voltage [V] Feb 2013 (HVM-1068) 1 2 3 Emitter-Collector Voltage [V] 5 4 < HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 1000 15 Gate-Emitter Voltage [V] Cies Capacitance [nF] 100 10 Coes 1 5 0 -5 -15 0.1 1 10 -10 Cres VGE = 0V, Tj = 25°C f = 100kHz 0.1 VCE = 850V, IC = 1200A Tj = 25°C 10 0 100 5 10 Gate Charge [µC] Collector-Emitter Voltage [V] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1200 1200 VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, RG(off) = 3.3Ω Tj = 125°C, Inductive load 1000 VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, RG(off) = 3.3Ω Tj = 150°C, Inductive load 1000 Eon Eon Switching Energies [mJ] Switching Energies [mJ] 15 800 600 Eoff 400 200 800 600 Eoff 400 200 Erec Erec 0 0 0 500 1000 1500 2000 2500 0 Collector Current [A] Feb 2013 (HVM-1068) 500 1000 1500 2000 Collector Current [A] 6 2500 < HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2000 1000 VCC = 850V, IC = 1200A VGE = ±15V, Tj = 125°C Inductive load VCC = 850V, IC = 1200A VGE = ±15V, Tj = 125°C Inductive load Switching Energies [mJ] Switching Energies [mJ] 800 1500 Eon 1000 500 600 Eoff 400 200 Erec 0 0 0 2 4 6 8 0 Gate Resistance [Ω] 5 10 15 20 Gate Resistance [Ω] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2000 1000 VCC = 850V, IC = 1200A VGE = ±15V, Tj = 150°C Inductive load VCC = 850V, IC = 1200A VGE = ±15V, Tj = 150°C Inductive load Eon Switching Energies [mJ] Switching Energies [mJ] 800 1500 1000 500 Eoff 600 400 200 Erec 0 0 0 2 4 6 8 0 Gate Resistance [Ω] Feb 2013 (HVM-1068) 5 10 15 Gate Resistance [Ω] 7 20 < HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 10 10 VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, RG(off) = 3.3Ω Tj = 125°C, Inductive load td(off) Switching Times [µs] Switching Times [µs] td(off) VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, RG(off) = 3.3Ω Tj = 150°C, Inductive load 1 td(on) tf 0.1 1 td(on) tf 0.1 tr tr 1000 0.01 100 10000 Collector Current [A] 100 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10000 100 0.1 100 trr 1000 100 Reverse Recovery Time [µs] Irr 1000 10 10000 Irr 10 1 0.1 100 Emitter Current [A] Feb 2013 (HVM-1068) 10000 VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, LS = 70nH Tj = 150°C, Inductive load Reverse Recovery Current [A] Reverse Recovery Time [µs] VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, LS = 70nH Tj = 125°C, Inductive load 1 10000 Collector Current [A] FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 10 1000 trr 1000 Emitter Current [A] 8 1000 100 10 10000 Reverse Recovery Current [A] 0.01 100 < HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 t i 1 exp Z th ( j c) (t ) R i i 1 n Rth(j-c)Q = 18.5K/kW Rth(j-c)D = 42.0K/kW 1 0.8 1 2 3 4 Ri [K/kW] : 0.0096 0.1893 0.4044 0.3967 i [sec.] : 0.0001 0.0058 0.0602 0.3512 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 Time [s] REVERSE BIAS SAFE OPERATING AREA (RBSOA) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 3000 10000 VCC 1200V, VGE = ±15V RG(on)1.3Ω, RG(off)3.3Ω Tj = 150°C, tpsc 10µs VCC 1200V, VGE = ±15V Tj = 150°C, RG(off) 3.3Ω 8000 Collector Current [A] Collector Current [A] 2500 2000 1500 1000 6000 4000 2000 500 0 0 0 500 1000 1500 2000 0 Collector-Emitter Voltage [V] Feb 2013 (HVM-1068) 500 1000 1500 Collector-Emitter Voltage [V] 9 2000 < HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 3000 Reverse Recovery Current [A] VCC 12 00 V, di/d t 72 00 A/µs Tj = 1 50°C 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 Collector-Emitter Voltage [V] Feb 2013 (HVM-1068) 10 < HVIGBT MODULES > CM1200DC-34S HIGH POWER SWITCHING USE INSULATED TYPE 5th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Keep safety first in your circuit designs! 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