< HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1200HC-90R IC ································································ 1200A VCES ·························································· 4500V 1-element in a pack Insulated type LPT-IGBT / Soft Recovery Diode AlSiC baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM November 2012 HVM-1057-E Dimensions in mm 1 < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Item VCES Collector-emitter voltage VGES IC ICRM IE IERM Ptot Viso Ve Tj Tjop Tstg tpsc Gate-emitter voltage Collector current Emitter current (Note 2) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature Short circuit pulse width Conditions VGE = 0V, Tj = −40…+125°C VGE = 0V, Tj = −50°C VCE = 0V, Tj = 25°C DC, Tc = 85°C Pulse (Note 1) DC Pulse (Note 1) Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Ratings 4500 4400 ±20 1200 2400 1200 2400 12500 6000 3500 −50 ~ +150 −50 ~ +125 −55 ~ +125 10 VCC = 3200V, VCE ≤ VCES, VGE =15V, Tj =125°C Unit V V A A A A W V V °C °C °C s ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres QG Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VCE = 10 V, IC = 120 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCEsat Collector-emitter saturation voltage td(on) Turn-on delay time tr Turn-on rise time Eon(10%) Turn-on switching energy (Note 5) Eon Turn-on switching energy (Note 6) td(off) Turn-off delay time tf Turn-off fall time Eoff(10%) Turn-off switching energy (Note 5) Eoff Turn-off switching energy (Note 6) December 2012 HVM-1057-E VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C VCC = 2800V, IC = 1200A, VGE = ±15V IC = 1200 A (Note 4) VGE = 15 V VCC = 2800 V IC = 1200 A VGE = ±15 V RG(on) = 2.7 Ω Ls = 150 nH Inductive load VCC = 2800 V IC = 1200 A VGE = ±15 V RG(off) = 10 Ω Ls = 150 nH Inductive load 2 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min ― ― 5.8 −0.5 ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― Limits Typ ― 16.0 6.3 ― 175.0 11.0 5.0 13.5 3.50 4.40 1.00 0.95 0.28 0.30 4.30 5.10 4.60 5.50 3.60 3.80 0.35 0.45 2.90 3.85 3.20 4.30 Max 16.0 ― 6.8 0.5 ― ― ― ― ― 5.10 ― 1.50 ― 0.50 ― ― ― ― ― 5.00 ― 1.00 ― ― ― ― Unit mA V µA nF nF nF µC V µs µs J J/P µs µs J J < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ELECTRICAL CHARACTERISTICS (continuation) Symbol Item Conditions (Note 2) VEC Emitter-collector voltage trr Reverse recovery time (Note 2) Irr Reverse recovery current (Note 2) Qrr Reverse recovery charge (Note 2) Reverse recovery energy (Note 2) Erec(10%) Erec (Note 5) Reverse recovery energy IE = 1200 A (Note 4) VGE = 0 V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VCC = 2800 V IC = 1200 A VGE = ±15 V RG(on) = 2.7 Ω Ls = 150 nH Inductive load (Note 2) (Note 6) Min — — — — — — — — — — — — Limits Typ 2.50 2.80 0.70 0.90 1100 1200 1000 1500 1.30 2.10 1.55 2.40 Max — 3.40 — — — — — — — — — — Min ― ― ― Limits Typ ― ― 6.0 Max 10.0 19.0 ― Min 7.0 3.0 1.0 ― 600 19.5 32.0 ― ― ― Limits Typ ― ― ― 1.2 ― ― ― 11.0 0.12 1.7 Max 22.0 6.0 3.0 ― ― ― ― ― ― ― Unit V µs A µC J J THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)D Rth(c-s) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to heat sink, grease = 1W/m·k, D(c-s) = 100m Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ rg Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw TC = 25°C TC = 25°C Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating. 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. Definition of all items is according to IEC 60747, unless otherwise specified. December 2012 HVM-1057-E 3 Unit N·m N·m N·m kg ― mm mm nH mΩ Ω < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 2500 2500 Tj = 25 °C VCE = VGE VGE = 1 3V 2000 2000 VGE = 1 5V VGE = 11V 1500 1000 VGE = 10V Coll ector Current [A] Coll ector Current [A] VGE = 16V 1500 1000 Tj = 1 25°C 500 Tj = 2 5°C 500 0 0 0 2 4 6 8 0 Collector - Emitter Voltage [V] 4 8 12 16 Gate - Emitter Voltage [V] FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2500 2500 VGE = 15 V 2000 Tj = 25 °C Tj = 25 °C 1500 Emi tter Current [A] Coll ector Current [A] 2000 Tj = 1 25°C 1000 500 1500 Tj = 1 25 °C 1000 500 0 0 0 2 4 6 8 0 Collector-Emitter Saturation Voltage [V] December 2012 HVM-1057-E 1 2 3 4 Emitter-Coll ector Voltage [V] 4 5 < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 1000 20 VCE = 28 00V, IC = 1 200 A Tj = 2 5° C 15 Gate-Emitter Voltage [V] Capa citance [nF] Cies 100 10 Co es 10 5 0 -5 Cre s -10 VGE = 0V, Tj = 2 5° C f = 10 0kHz 1 -15 0.1 1 10 100 0 5 Coll ector-Emitter Voltage [V] 10 15 20 Gate Charge [µC] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 16 VCC = 280 0V, VGE = ±1 5V RG( on) = 2.7 Ω, R G(off ) = 10Ω LS = 15 0nH, Tj = 125 °C Indu ctive lo ad 12 Eon VCC = 28 00V, IC = 1 200 A VGE = ±1 5V, L S = 1 50n H Tj = 1 25°C, Ind uctive load 10 12 10 Eo ff 8 6 4 Erec Switching Energies [J/pulse] Switching Energies [J/pulse] 14 2 8 6 Eon 4 2 Ere c 0 0 0 500 1000 1500 2000 2500 0 Collector Curre nt [A] December 2012 HVM-1057-E 1 2 3 Gate resistor [Ohm] 5 4 5 < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 12 100 10 10 Switching Times [µs] Switching Energies [J/pulse] VCC = 2 800 V, VGE = ±15 V RG(on ) = 2.7Ω, RG( off) = 1 0Ω LS = 1 50 nH, Tj = 1 25°C In ducti ve loa d VCC = 28 00 V, I C = 1 200 A VG E = ±1 5V, L S = 1 50n H Tj = 1 25°C, In ductive l oa d 8 6 Eoff 4 td(o ff) td(on ) 1 tf 0.1 tr 2 0 0.01 0 5 10 15 20 100 Gate resistor [Ohm] 100 REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 10000 VCC 32 00 V, VGE = ± 15V Tj = 125 °C, RG(o ff) = 10 Ω 10 1000 trr 100 100 2500 Coll ector Current [A] Irr Reverse Recovery Current [A] Reverse Recovery Time [µs] VCC = 28 00 V, VGE = ± 15V RG(on) = 2.7Ω, LS = 150 nH Tj = 1 25°C, In ductive l oa d 0.1 1500 1000 0 0 10000 1000 2000 3000 4000 Collector-Emitter Voltage [V] Emitter Current [A] December 2012 HVM-1057-E 2000 500 10 1000 10000 Coll ector Current [A] FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1 1000 6 5000 < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 12 3000 VCC 32 00V, VGE = ±1 5V Tj = 1 25°C, R G(on) = 2.7Ω, RG( off) = 1 0Ω VCC 32 00 V, di /d t < 6 kA/µs Tj = 125 °C Reverse Recovery Current [A] Coll ector Current [kA] 10 8 6 4 2 2500 2000 1500 1000 500 0 0 0 1000 2000 3000 4000 5000 0 Collector-Emitter Vol tage [V] 1000 2000 3000 4000 5000 Emitte r-Collector Voltage [V] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c)Q = 10 .0 K/kW Rth(j-c)R = 1 9.0K/kW 1 Z (t ) th( j c ) n R 1 exp i 1 0.8 0.6 0.1 1 2 0.1893 3 0.4044 4 0.3967 ti [sec] : 0.0001 0.0058 0.0602 0.3512 10 Ti me [s] December 2012 HVM-1057-E 1 0.0096 0.2 0.01 t i Ri [K/kW] : 0.4 0 0.001 i 7 < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Keep safety first in your circuit designs! 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