TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small Inductor Size • Short Circuit Protection • Built-In Undervoltage Lockout • 95% Typical Efficiency • Automatic Switchover to Current-Saving PFM Mode at Low Output Loads • Automatic Output Capacitor Discharge While in Shutdown • Programmable Soft-Start • Power-Saving Shutdown Mode • Small 8-Pin SOP Package 8-Pin SOP TC120503EHA 5.0 8-Pin SOP -40°C to +85°C TC120333EHA 3.3 8-Pin SOP -40°C to +85°C TC120303EHA 3.0 8-Pin SOP -40°C to +85°C CPC 3 6 GND SHDN/SS 4 5 SENSE The TC120 consumes only 55µA (max) of supply current (VOUT = 3.3V) and can be placed in shutdown mode by bringing the shutdown input (SHDN) low. During shutdown, the regulator is disabled, supply current is reduced to 2.5µA (max), and VOUT is internally pulled to ground, discharging the output capacitor. Normal operation resumes when SHDN is brought high. Other features include a built-in undervoltage lockout (UVLO), an externally programmable soft start time, and output short circuit protection. The TC120 operates from a maximum input voltage of 10V and is available in a low-profile 8-Pin SOP package. Operating Temp. Range Package EXT TC120 is a 300kHz PFM/PWM step-down (Buck) DC/ DC regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but automatically converts to PFM at low output loads for greater efficiency. It requires only an external inductor, Schottky diode, and two capacitors to implement a step-down converter having a maximum output current of 600mA (VIN = 5V, VOUT = 3.3V). An external switching transistor (P-channel MOSFET) can be added to increase output current capability to support output loads of 2A or more. Device Selection Table Output Voltage (V) 7 TC120 General Description Portable Test Equipment Local Logic Supplies Portable Audio Systems Portable Scanners Palmtops Electronic Organizers Part Number LX EXTW 2 Applications • • • • • • 8 VIN 1 Functional Block Diagram L1 VIN VOUT LX VIN D1 CIN EXTW COUT EXT TC120XX03 CPC SHDN/SS GND SENSE CSS 4.7nF 2002 Microchip Technology Inc. DS21365B-page 1 TC120 1.0 ELECTRICAL CHARACTERISTICS *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings* Power Supply Voltage (VIN).................... -0.3V to +12V Voltage on VOUT Pin ............................... -0.3V to +12V Voltage on LX, Boost Pins ................................... (VIN – 12V) to (VIN + 0.3V) Voltage on EXT1, EXT2, SHDN Pins .......................................... (-0.3V) to (VIN + 0.3V) LX Pin Current .............................................. 700mA pk EXT1, EXT2 Pin Current ...................................±50mA Continuous Power Dissipation .........................300mW Operating Temperature Range............. -40°C to +85°C Storage Temperature Range .............. -40°C to +150°C TC120 ELECTRICAL SPECIFICATIONS Electrical Characteristics: Test circuit of Figure 3-1, TA = 25°C, VIN = VR x 1.2, Note 1 unless otherwise noted. Symbol Parameter VOUT Output Voltage VIN Input Voltage Min Typ Max VR x 0.975 VR ± 0.5% VR x 1.025 Units V Test Conditions VOUT = 3.0V IOUT = 120mA (Note 1) VOUT = 3.3V IOUT = 132mA VOUT = 5.0V IOUT = 200mA 1.8 — 10.0 V IOUTMAX Maximum Output Current 500 600 600 — — — — — — mA VOUT = 3.0V VOUT = 3.3V VOUT = 5.0V IIN Supply Current — 52 55 71 82 86 110 µA VOUT = 3.0V VIN = VR x 1.05, no load VOUT = 3.3V VOUT = 5.0V ISHDN Shutdown Supply Current — 1.5 2.5 µA No load, SHDN = 0V, (Note 2) ILX LX Pin Leakage Current — — — 1.5 2 2.5 µA Measured at EXT1 Pin (Note 2) No load, SHDN = 0V RDSON(L LX Pin ON Resistance X) — — — 0.69 0.64 0.44 0.94 0.85 0.58 Ω VOUT = 3.0V VOUT = VR x 0.9 (Note 2) VOUT = 3.3V VLX = VIN – 0.2V, 10Ω VOUT = 5.0V Resistor from LX to VIN, SHDN = VIN REXTH EXT1, EXT2 On Resistance to VIN — — — 38 35 24 52 47 32 Ω VOUT = 3.0V SHDN = VIH; EXT1 and EXT2 VOUT = 3.3V connected to 200Ω load, VOUT = 5.0V VEXT1 = VEXT2 = (VIN – 0.4V); VOUT = VIN (Note 2) REXTL EXT1, EXT2 On Resistance to GND — — — 31 29 20 41 37 26 Ω VOUT = 3.0V SHDN = VIH; EXT1 and EXT2 VOUT = 3.3V pulled up through a series VOUT = 5.0V resistance of 200Ω to a voltage such that VEXT1, 2 = 0.4V fOSC Oscillator Frequency 255 300 345 kHz DPWM Maximum PWM Duty Cycle — — 100 % DPFM PFM Duty Cycle 15 25 35 % No load η Efficiency — 95 — % VIN > VR x 1.2 Note 1: 2: 3: Measured at EXT1 Pin, VIN = VOUT + 0.3V, IOUT = 20mA (Note 3) VR is the factory-programmed output voltage setting. No external components connected, except C SS. While operating in PWM Mode. DS21365B-page 2 2002 Microchip Technology Inc. TC120 Electrical Characteristics: Test circuit of Figure 3-1, TA = 25°C, VIN = VR x 1.2, Note 1 unless otherwise noted. Parameter Min Typ Max Units VUVLO Symbol Minimum Operating Voltage 0.9 — 1.8 V VOUT = VR x 0.9 (Note 2), SHDN = VIN Measured with internal transistor in OFF state and VIN falling VIH SHDN Input Logic High, Threshold Voltage 0.65 — — V VOUT = 0V, (Note 2) VIL SHDN Input Logic Low, Threshold Voltage — — 0.20 V VOUT = 0V, (Note 2) tPRO Short Circuit Protection Response Time 3 5 8 msec Soft Start Time 6 10 16 msec tSS Note 1: 2: 3: Test Conditions Time from VOUT = 0V to SHDN = VIL (Note 2) VR is the factory-programmed output voltage setting. No external components connected, except C SS. While operating in PWM Mode. 2002 Microchip Technology Inc. DS21365B-page 3 TC120 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: PIN FUNCTION TABLE Pin No. (8-Pin SOP) Symbol 1 VIN 2 EXTW Extended external switching transistor drive output. This output follows the timing on the EXT output with an additional 100nsec blanking time on both the leading and trailing edges. That is, this output transitions from high-to-low 100 nsec prior to the same transition on EXT; and transitions low-to-high 100nsec after the same transition on EXT; resulting in a longer external switch ON time. (See Section 3.9 External Switching Transistor Selection). 3 CPC Charge pump capacitor input. An inverting charge pump is formed by attaching a capacitor and diode to this input. (See Section 3.5 Improving High Load Efficiency In Regulator Operating Mode). 4 SHDN/SS Shutdown and soft-start control input. A soft start capacitor of 100pF (min) must be connected to this input. The soft start capacitor is charged by an internal µA current source that gently ramps the TC120 into service. Shutdown control is best implemented with an external open collector (or open drain) switch. The TC120 enters shutdown when this input is low. During shutdown, the regulator is disabled, and supply current is reduced to less than 2.5µA. Normal operation is restored when this input is open-circuited, and allowed to float high. (See Section 3.6 Low Power Shutdown Mode/Soft Start Input). 5 SENSE 6 GND Ground terminal. 7 EXT External switching transistor drive output. This output connects directly to the gate of an external P-channel MOSFET for applications requiring output currents greater than 600mA. The timing of this output exactly matches that of the gate drive for the internal P-channel transistor. This output can drive a maximum capacitance of 1000pF. (See Section 3.9 External Switching Transistor Selection). 8 Lx Inductor terminal. This pin is connected to the drain of the internal P-channel switching transistor. If the TC120 is operated as a regulator (i.e., using the internal switch); the inductor must be connected between this pin and the SENSE pin. DS21365B-page 4 Description Unregulated supply input. Voltage sense input. This input must be connected to the output voltage node at the physical location that requires the tightest voltage regulation. 2002 Microchip Technology Inc. TC120 3.0 DETAILED DESCRIPTION 3.2 The TC120 can be operated as an integrated stepdown regulator (using the internal switching transistor); or as a step-down regulator controller (using an external switching transistor). When operating as an integrated regulator, the only required external components are a Schottky diode, inductor and an output capacitor. Operating in this configuration, the TC120 is capable of supporting output load currents to a maximum of 600mA with operating efficiencies above 85%. Efficiencies at high loads can be further improved by using the on-board charge pump circuit to pull the gate of the internal switching transistor below ground for the lowest possible ON resistance. (For more information, see Section 3.5 Improving High Load Efficiency in Regulator Operating Mode). Higher output currents are achieved by operating the TC120 with an external P-channel switching transistor (controller mode). In this operating configuration, the maximum output current is determined primarily by the ON resistance of the P-channel switch and the series resistance of the inductor. FIGURE 3-1: TEST CIRCUIT L1 22µH VIN – 47µF/10V Tantalum VOUT LX VIN + + IN5817 EXTW EXT TC120XX03 CPC SHDN/SS – COUT 47µF/10V Tantalum GND SENSE CSS 4.7nF 3.1 Inductor Selection Selecting the proper inductor value is a trade-off between physical size and power conversion requirements. Lower value inductors cost less, but result in higher ripple current and core losses. They are also more prone to saturate since the coil current ramps faster and could overshoot the desired peak value. This not only reduces efficiency, but could also cause the current rating of the external components to be exceeded. Larger inductor values reduce both ripple current and core losses, but are larger in physical size and tend to increase the start-up time slightly. A 22µH inductor is the best overall compromise and is recommended for use with the TC120. For highest efficiency, use inductors with a low DC resistance (less than 20mΩ). To minimize radiated noise, consider using a toroid, pot core or shielded-bobbin inductor. 2002 Microchip Technology Inc. Input Bypass Capacitor Using an input bypass capacitor reduces peak current transients drawn from the input supply, and reduces the switching noise generated by the regulator. The source impedance of the input supply determines the size of the capacitor that should be used. 3.3 Output Capacitor The effective series resistance of the output capacitor directly affects the amplitude of the output voltage ripple. (The product of the peak inductor current and the ESR determines output ripple amplitude.) Therefore, a capacitor with the lowest possible ESR should be selected. Smaller capacitors are acceptable for light loads or in applications where ripple is not a concern. A 47µF Tantalum capacitor is recommended for most applications. The Sprague 595D series of tantalum capacitors are amongst the smallest of all low ESR surface mount capacitors available. Table 3-1 lists suggested components and suppliers. 3.4 Catch Diode The high operating frequency of the TC120 requires a high-speed diode. Schottky diodes such as the MA737 or 1N5817 through 1N5823 (and the equivalent surface mount versions) are recommended. Select a diode whose average current rating is greater than the peak inductor current; and whose voltage rating is higher than VINMAX. 3.5 Improving High Load Efficiency in Regulator Operating Mode If the TC120 is operated at high output loads most (or all) of the time, efficiency can be improved with the addition of two components. Ordinarily, the voltage swing on the gate of the internal P-channel transistor is from ground to VIN. By adding a capacitor and diode as shown in Figure 3-2, an inverting charge pump is formed, enabling the internal gate voltage to swing from a negative voltage to +VIN. This increased drive lowers the RDSON of the internal transistor, improving efficiency at high output currents. Care must be taken to ensure the voltage measured between VIN and CPC does not exceed an absolute value of 10V. While this is not a problem at values of VIN at (or below) 5V, higher VIN values will require the addition of a clamping mechanism (such as a Zener diode) to limit the voltage as described. While this technique improves efficiency at high output loads, it is at the expense of low load efficiency because energy is expended charging and discharging the charge pump capacitor. This technique is therefore not recommended for applications that operate the TC120 at low output currents for extended time periods. If unused, CPC must be grounded. DS21365B-page 5 TC120 3.6 Low Power Shutdown Mode/Soft Start Input The SHDN/SS input acts as both the shutdown control and the node for the external soft start capacitor, which is charged by an internal 1µA current source. A value of 4700pF (100pF minimum) is recommended for the soft start capacitor. Failure to do this may cause large overshoot voltages and/or large inrush currents resulting in possible instability. The TC120 enters a low power shutdown mode when SHDN/SS is brought low. While in shutdown, the oscillator is disabled and the output discharge switch is turned on, discharging the output capacitor. Figure 3-3 shows the recommended interface circuits to the SHDN/SS input. As shown, the SHDN/SS input should be controlled using an open collector (or open drain) device, such that the SHDN/ SS input is grounded for shutdown mode, and opencircuited for normal operation (Figure 3-3a). If a CMOS device is used to control shutdown (Figure 3-3b), the value of R1 and CSS should be chosen such that the voltage on SHDN/SS rises from ground to 0.65V in 1.5msec (Figure 3-4). If shutdown is not used, C SS must still be connected as shown in Figure 3-3c and Figure 3-3d. SHDN/SS may be pulled up with a resistor (Figure 3-3c) as long as the values of RSS and C SS provide the approximate charging characteristic on power up shown in Figure 3-4. CSS only may also be connected as shown in Figure 3-3d with CSS chosen at 4700pF (minimum 100pF). 3.7 Undervoltage Lockout (UVLO) The TC120 is disabled whenever VIN is below the undervoltage lockout threshold. This threshold is equal to the guaranteed minimum operating voltage for the TC120 (i.e., 2.2V). When UVLO is active, the TC120 is completely disabled. 3.8 3.9 External Switching Transistor Selection EXT is a complimentary output with a maximum ON resistances of 32Ω to VDD when high and 26Ω to ground when low, at VOUT = 5V. It is designed to directly drive a P-channel MOSFET (Figure 3-5). The P-channel MOSFET selection is determined mainly by the on-resistance, gate-source threshold and gate charge requirements. Also, the drain-to-source and gate-to-source breakdown voltage ratings must be greater than VINMAX. The total gate charge specification should be less than 100nC for best efficiency. The MOSFET must be capable of handling the required peak inductor current, and should have a very low onresistance at that current. For example, a Si9430 MOSFET has a drain-to-source rating of -20V, and a typical on-resistance rDSON of 0.07Ω at 2A, with VGS = -4.5V. (EXTW (Figure 3-6) may be gated with external circuitry to add blanking, or as an auxiliary timing signal.) Table 3-1 lists suggested components and suppliers. 3.10 Board Layout Guidelines As with all inductive switching regulators, the TC120 generates fast switching waveforms, which radiate noise. Interconnecting lead lengths should be minimized to keep stray capacitance, trace resistance and radiated noise as low as possible. In addition, the GND pin, input bypass capacitor and output filter capacitor ground leads should be connected to a single point. The input capacitor should be placed as close to power and ground pins of the TC120 as possible. The length of the EXT trace must also be kept as short as possible. Short Circuit Protection Upon detection of an output short circuit condition, the TC120 reduces the PWM duty cycle to a minimum value using its internal protection timer. The sequence of events is as follows: when an output voltage decrease to near zero is detected (as the result of an overload), the internal (5msec) protection timer is started. If the output voltage has not recovered to nominal value prior to the expiration of the protection timer, the TC120 is momentarily shut down by dedicated, internal circuitry. Immediately following this action, the soft start sequence is engaged in an attempt to re-start the TC120. If the output short circuit is removed, normal operation is automatically restored. If the short circuit is still present, the timed self-shutdown sequence described above is repeated. DS21365B-page 6 2002 Microchip Technology Inc. TC120 TABLE 3-1: SUGGESTED COMPONENTS AND SUPPLIERS Type Inductors Surface Mount Sumida CD54 Series CDRH Series Coilcraft DO Series Capacitors Diodes Transistors AVX TPS Series ON Semiconductor MBRS340T3 Silconix Little Foot MOSFET Series Sprague 595D Series Nihon NSQ Series Zetex FZT749 PNP Bipolar Transistor Matsushita MA737 Toshiba 2SA1213 PNP Transistor Miniature Through-Hole Sumida RCH Series Sanyo Standard Through-Hole Coilcraft PCH Series Nichicon PL Series OS-CON Series IRC OAR Series ON Semiconductor TMOS Power MOSFETs United Chemi-Conv LXF Series FIGURE 3-2: TC120 WITH ADDED COMPONENTS FOR IMPROVED EFFICIENCY AT HIGH OUTPUT CURRENTS VIN ≤ 5V CP 2200 pF Ceramic VIN > 5V LX VIN EXTW EXT EXTW TC120XX03 CPC D1 IN5817 SHDN/SS a) For VIN ≤ 5V 2002 Microchip Technology Inc. EXT TC120XX03 GND SENSE LX VIN CP 2200 pF Ceramic CPC 10V Zener Diode D1 IN5817 SHDN/SS GND SENSE b) For VIN > 5V DS21365B-page 7 TC120 FIGURE 3-3: SHUTDOWN CONTROL CIRCUITS TC120XX03 SHDN/SS 47K SHDN 2N2222 ON OFF VIN SHDN ON OFF TC120XX03 CMOS Gate R1 SHDN/SS CSS CSS 4.7nF a) Using an Open Collector Device b) Using a Complementary Output Device VIN TC120XX03 TC120XX03 RSS SHDN/SS SHDN/SS CSS 4.7nF CSS c) Shutdown Not Used – with Pull-Up FIGURE 3-4: d) Shutdown Not Used – No Pull-Up SOFT START TIMING ON Shutdown Signal OFF 0.65V SHDN/SS X 0V 1.5msec DS21365B-page 8 2002 Microchip Technology Inc. TC120 FIGURE 3-5: USING EXTERNAL TRANSISTOR SWITCH VIN CIN 47µF Tantalum LX VIN EXTW EXT TC120XX03 CPC GND L1 22µH VOUT SHDN/SS CSS 4.7 nF FIGURE 3-6: SENSE IN5817 COUT 47µF Tantalum EXTERNAL (EXT) AND EXTENDED EXTERNAL (EXTW) SWITCHING TRANSISTOR DRIVE OUTPUT EXT EXTW 100nsec 2002 Microchip Technology Inc. 100nsec DS21365B-page 9 TC120 4.0 PACKAGING INFORMATION 4.1 Package Marking Information Package marking data not available at this time. 4.2 Taping Form Component Taping Orientation for 8-Pin SOP Devices User Direction of Feed PIN 1 W P Standard Reel Component Orientation for TR Suffix Device Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size 12 mm 8 mm 1000 7 in 8-Pin SOP 4.3 Package Dimensions 8-Pin SOP PIN 1 .181 (4.60) .165 (4.20) .256 (6.50) .232 (5.90) .051 (1.30) .049 (1.24) .217 (5.50) .193 (4.90) .069 (1.75) .055 (1.40) .020 (0.50) .012 (0.30) .008 (0.20) .000 (0.00) .010 (0.25) .004 (0.10) 8° MAX. .018 (0.45) .014 (0.35) Dimensions: inches (mm) DS21365B-page 10 2002 Microchip Technology Inc. TC120 Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2002 Microchip Technology Inc. DS21365B-page11 TC120 NOTES: DS21365B-page12 2002 Microchip Technology Inc. TC120 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, FilterLab, KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER, PICSTART, PRO MATE, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select Mode and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2002, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company’s quality system processes and procedures are QS-9000 compliant for its PICmicro ® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001 certified. 2002 Microchip Technology Inc. DS21365B-page 13 WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC Japan Corporate Office Australia 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Rocky Mountain China - Beijing 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456 Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104 Atlanta 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307 Boston 2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821 Chicago 333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075 Dallas 4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 Kokomo 2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 China - Chengdu Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599 China - Fuzhou Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521 China - Shanghai Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060 China - Shenzhen 150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335 Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1315, 13/F, Shenzhen Kerry Centre, Renminnan Lu Shenzhen 518001, China Tel: 86-755-2350361 Fax: 86-755-2366086 San Jose China - Hong Kong SAR Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 New York Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 India Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O’Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934 Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan Microchip Technology Taiwan 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 EUROPE Denmark Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910 France Microchip Technology SARL Parc d’Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 Germany Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 Italy Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 United Kingdom Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 05/01/02 DS21365B-page 14 2002 Microchip Technology Inc.