NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−963 package which is designed for low power surface mount applications. http://onsemi.com NPN SILICON DIGITAL TRANSISTORS (3) (2) R1 Q1 (1) R2 Features • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT−963 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb−Free Devices These are Halide−Free Devices MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Q2 R2 (4) R1 (5) (6) MARKING DIAGRAM XM SOT−963 CASE 527AD X M G 1 = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NSBC114EDP6T5G SOT−963 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 2 1 Publication Order Number: NSBC114EDP6/D NSBC114EDP6T5G Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 231 1.9 mW mW/°C 540 °C/W 269 2.2 mW mW/°C 464 °C/W 339 2.7 mW mW/°C 369 °C/W 408 3.3 mW mW/°C RqJA 306 °C/W TJ, Tstg −55 to +150 °C SINGLE HEATED Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C PD Thermal Resistance (Note 1) Junction-to-Ambient RqJA Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C PD Thermal Resistance (Note 2) Junction-to-Ambient RqJA DUAL HEATED (Note 3) PD Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C Thermal Resistance (Note 1) Junction-to-Ambient RqJA Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C PD Thermal Resistance (Note 2) Junction-to-Ambient Junction and Storage Temperature 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. DEVICE MARKING AND RESISTOR VALUES Device Marking* R1 (k) R2 (k) NSBC114EDP6T5G A (270°) 10 10 NSBC124EDP6T5G R (0°) 22 22 NSBC144EDP6T5G D (0°) 47 47 NSBC114YDP6T5G P (0°) 10 47 NSBC123TDP6T5G A (90°) 2.2 ∞ NSBC143EDP6T5G T (0°) 4.7 4.7 NSBC143ZDP6T5G Y (0°) 4.7 47 NSBC123JDP6T5G D (90°) 2.2 47 NSBC144WDP6T5G V (0°) 47 22 NSBC114TDP6T5G A (0°) 10 ∞ NSBC115TDP6T5G F (0°) 100 ∞ Package Shipping† SOT−963 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *(XX°) = Degree rotation in the clockwise direction. http://onsemi.com 2 NSBC114EDP6T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 4.0 0.1 1.5 0.18 0.2 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 15 80 80 80 60 100 140 140 350 30 200 150 140 − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 OFF CHARACTERISTICS NSBC114EDP6T5G NSBC124EDP6T5G NSBC144EDP6T5G NSBC114YDP6T5G NSBC114TDP6T5G NSBC123TDP6T5G NSBC115TDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC123JDP6T5G NSBC144WDP6T5G ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBC114EDP6T5G NSBC124EDP6T5G NSBC144EDP6T5G NSBC114YDP6T5G NSBC114TDP6T5G/NSBC115TDP6T5G/NSBC123TDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC123JDP6T5G NSBC144WDP6T5G Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) NSBC114EDP6T5G/NSBC124EDP6T5G NSBC144EDP6T5G/NSBC114YDP6T5G NSBC123JDP6T5G/NSBC144WDP6T5G (IC = 10 mA, IB = 1 mA) NSBC143EDP6T5G/NSBC143ZDP6T5G NSBC114TDP6T5G/NSBC123TDP6T5G (IC = 10 mA, IB = 5.0 mA) NSBC115TDP6T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) NSBC114TDP6T5G NSBC114EDP6T5G NSBC124EDP6T5G NSBC114YDP6T5G NSBC123TDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC123JDP6T5G NSBC144EDP6T5G NSBC144WDP6T5G NSBC115TDP6T5G VOL 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc Vdc NSBC114EDP6T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Symbol Min Typ Max Unit VOH 4.9 − − Vdc R1 7.0 7.0 15.4 32.9 7.0 7.0 1.5 3.3 3.3 1.54 32.9 70 10 10 22 47 10 10 2.2 4.7 4.7 2.2 47 100 13 13 28.6 61.1 13 13 2.9 6.1 6.1 2.86 61.1 130 kW 0.8 1.0 1.2 0.17 − 0.055 0.038 1.7 0.21 − 0.1 0.047 2.1 0.25 − 0.185 0.056 2.6 ON CHARACTERISTICS (Note 5) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) NSBC114EDP6T5G/NSBC124EDP6T5G NSBC144EDP6T5G/NSBC114YDP6T5G NSBC143EDP6T5G/NSBC123JDP6T5G NSBC144WDP6T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBC123TDP6T5G/NSBC143ZDP6T5G/NSBC114TDP6T5G/ NSBC115TDP6T5G Input Resistor NSBC114TDP6T5G NSBC114EDP6T5G NSBC124EDP6T5G NSBC144EDP6T5G NSBC114YDP6T5G NSBC114YDP6T5G NSBC123TDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC123JDP6T5G NSBC144WDP6TG NSBC115TDP6T5G Resistor Ratio NSBC114EDP6T5G/NSBC124EDP6T5G/ NSBC144EDP6T5G/NSBC123EDP6T5G NSBC114YDP6T5G NSBC114TDP6T5G/NSBC115TDP6T5G//NSBC123TDP6T5G NSBC143ZDP6T5G NSBC123JDP6T5G NSBC144WDP6T5G R1/R2 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 4 NSBC114EDP6T5G Series 1.0 1000 IC/IB = 10 VCE = 10 V hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EDP6T5G 100 TA = 25°C TA = 150°C 0.10 TA = −55°C 0.01 0 5 25°C 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 150°C 10 1.0 0.1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 1. VCE(sat) vs. IC 100 IC, COLLECTOR CURRENT (mA) 2.20 2.00 1.80 1.60 1.40 1.20 1.00 0 5 10 15 20 25 30 35 40 VCB, COLLECTOR BASE VOLTAGE (V) 45 50 150°C 10 1 −55°C 0.1 25°C 0.01 0.5 Figure 3. Output Capacitance 1 1.5 2 2.5 3 3.5 Vin, INPUT VOLTAGE (V) −55°C 25°C 1.0 150°C 0.10 0 5 10 15 4 4.5 Figure 4. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) COBO, OUTPUT CAPACITANCE (pF) 100 Figure 2. DC Current Gain 2.40 0.80 −55°C 20 25 30 35 IC, COLLECTOR CURRENT (mA) 40 45 Figure 5. Input Voltage vs. Output Current http://onsemi.com 5 50 5 NSBC114EDP6T5G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 6. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 7. Open Collector Inverter: Inverts the Input Signal Figure 8. Inexpensive, Unregulated Current Source http://onsemi.com 6 NSBC114EDP6T5G Series PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE D D 6 5 A B A L 4 HE E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C 3 e 6X DIM A b C D E e L HE C b 0.08 C A B MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN INCHES NOM MAX 0.004 0.003 0.037 0.03 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.008 0.20 0.008 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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