SMM4F High junction temperature Transil™ Features ■ Typical peak pulse power: – 400 W (10/1000 µs) – 2.4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 33 V ■ Unidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 175 °C ■ JEDEC registered package outline ■ RoHS package ■ Halogen free molding compound Complies with the following standards ■ ■ IEC 61000-4-2 level 4: – 15 kV (air discharge) – 8 kV (contact discharge) MIL STD 883G-Method 3015-7: class3 – 25 kV (human body model) A K STmite flat (DO222-AA) Description The SMM4F Transil series has been designed to protect sensitive equipment against electro-static discharges according to IEC 61000-4-2, MIL STD 883 Method 3015, and electrical over stress such as IEC 61000-4-4 and 5. They are generally for surges below 400 W 10/1000 µs. This planar technology makes it compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time. Their low clamping voltages provide a better safety margin to protect sensitive circuits with extended life time expectancy. Packaged in STmite flat, this minimizes PCB space consumption (footprint in accordance with IPC 7531 standard). TM: Transil is a trademark of STMicroelectronics December 2007 Rev 2 1/10 www.st.com 10 Characteristics 1 SMM4F Characteristics Table 1. Symbol Absolute ratings (Tamb = 25 °C) Value Unit 30 kV Tj initial = Tamb 400 W Power dissipation on infinite heatsink Tamb = 125 °C 2.5 W IFSM Non repetitive surge peak forward current for unidirectional types tp = 10 ms Tj initial = Tamb 30 A Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -55 to +175 °C TL Maximum lead temperature for soldering during 10 s 260 °C Value Unit VPP PPP P Parameter Peak pulse voltage (IEC 61000-4-2 contact discharge) Peak pulse power dissipation (1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistances Symbol Rth(j-l) Junction to leads 20 Rth(j-a) Junction to ambient on PCB with recommended pad layout 250 Table 3. Symbol 2/10 Parameter °C/W Electrical characteristics - parameter definitions (Tamb = 25 °C) Parameter VRM Stand-off voltage VBR Breakdown voltage IR Breakdown current VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop RD Dynamic resistance I IF VF VCL VBR VRM IRM IR IPP V SMM4F Table 4. Characteristics Electrical characteristics - parameter values (Tamb = 25 °C) VBR @IR(1) IRM max@VRM Type 25 °C 85 °C µA min typ max V V mA VCL @IPP RD(2) VCL @IPP RD(2) 10/1000 µs 10/1000 µs 8/20 µs 8/20 µs αT(3) max max max V A Ω 9.2 V A Ω 10-4/°C SMM4F5.0A 10 50 5.0 6.46 6.80 7.14 10 43.5 0.047 13.4 174 0.04 5.7 SMM4F6.0A 10 50 6.0 6.65 7.00 7.35 10 10.3 38.8 0.076 13.7 170 0.04 5.9 SMM4F6.5A 10 50 6.5 7.13 7.50 7.88 10 11.2 37.5 0.093 14.5 160 0.04 6.1 SMM4F8.5A 10 50 8.5 10.0 10.5 1 14.4 27.7 0.141 19.5 124 0.07 7.3 SMM4F10A 0.2 1 10 11.4 12.0 12.6 1 17.0 23.5 0.187 21.7 106 0.09 7.8 SMM4F12A 0.2 1 12 13.3 14.0 14.7 1 19.9 20.1 0.259 25.3 91 0.12 8.3 SMM4F13A 0.2 1 13 14.3 15.0 15.8 1 21.5 18.6 0.309 27.2 85 0.13 8.4 SMM4F15A 0.2 1 15 17.1 18.0 18.9 1 24.4 16.4 0.335 32.5 71 0.19 8.8 SMM4F18A 0.2 1 18 20.9 22.0 23.1 1 29.2 14.0 0.436 39.3 59 0.27 9.2 SMM4F20A 0.2 1 20 22.8 24.0 25.2 1 32.4 12.0 0.600 42.8 54 0.33 9.4 SMM4F24A 0.2 1 24 26.6 28.01 29.4 1 38.9 9.5 1.00 46 0.47 9.6 SMM4F26A 0.2 1 26 28.5 30.0 31.5 1 42.1 9.0 1.18 53.5 43 0.51 9.7 SMM4F28A 0.2 1 28 31.4 33.0 34.7 1 45.4 8.0 1.34 59.0 39 0.62 9.8 SMM4F33A 0.2 1 33 37.1 39.0 41.0 1 53.3 7.0 1.76 69.7 33 0.87 10.0 9.5 50 1. Pulse test: tp <50ms. 2. To calculate maximum clamping voltage at other surge currents, use the following formula VCLmax = RD x IPP + VBRmax 3. To calculate VBR versus junction temperature, use the following formula: VBR @ Tj = VBR @ 25 °C x (1 + αT x (Tj - 25)) Figure 1. Definition of IPP pulse %IPP Repetitive peak pulse current tr = rise time (µs) tp = pulse duration time (µs) 100 50 0 tr tp t 3/10 Characteristics Figure 2. 1.1 SMM4F Peak power dissipation versus initial junction temperature Figure 3. PPP[T j initial] / PPP[T j initial = 2 5 °C] 10.0 Peak pulse power versus exponential pulse duration (Tj initial = 25 °C) PPP(kW) Tj initial = 25 °C 1.0 0.9 0.8 0.7 0.6 1.0 0.5 0.4 0.3 0.2 Tj initial (°C) 0.1 tp(ms) 0.0 0.1 0 25 Figure 4. 50 75 100 125 150 175 200 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 Clamping voltage versus peak pulse current (exponential waveform, maximum values) IPP(A) 1000 Tj initial=25 °C SMM4F5.0A SMM4F15A 100 SMM4F24A SMM4F33A 10 1 tp = 8/20 µs tp = 10/1000 µs VCL(V) 0 0 4/10 5 10 15 20 25 30 35 40 45 50 55 60 65 70 SMM4F Characteristics Figure 5. 10000 Junction capacitance versus reverse applied voltage (typical values) Figure 6. C(pF) 1.0E+02 Peak forward voltage drop versus peak forward current (typical values) IFM(A) F=1 MHz VOSC=30 mVRMS Tj=25 °C 1.0E+01 1000 SMM4F5.0A Tj =125 °C 1.0E+00 SMM4F15A SMM4F24A 100 SMM4F33A Tj =25 °C 1.0E-01 VFM(V) VR(V) 10 1.0E-02 1 10 Figure 7. 1.00 100 0.0 Figure 8. Relative variation of thermal impedance junction to ambient versus pulse duration (printed ciruit board FR4, SCu = 1 cm2) Zth(j-a)/Rth(j-a) 200 On recommended pad layout 0.5 1.0 1.5 2.0 2.5 3.0 Thermal resistance junction to ambient versus copper surface under each lead (printed circuit board FR4, eCu = 35 µm) Rth(j-a)(°C/W) 180 160 0.10 140 120 100 0.01 80 60 tp(S) 0.00 1.0E-03 Figure 9. SCU(cm2) 40 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Leakage current versus junction temperature (typical values) 1.E+04 IR(nA) 1.E+03 VBR≤11.7V 1.E+02 VBR>11.7V 1.E+01 1.E+00 Tj(°C) VR=VRM 1.E-01 25 50 75 100 125 150 175 5/10 Ordering information scheme 2 SMM4F Ordering information scheme Figure 10. Ordering information scheme SM Surface Mount Package M = STmite package Surge rating 4F = 400 W in flat package Stand off voltage example - 12 = 12 V Type A = Unidirectional Packaging TR = Tape and reel 6/10 M 4F xx A - TR SMM4F 3 Package information Package information ● Case: JEDEC DO-222AA molded plastic over Planar junction ● Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 ● Polarity: For unidirectional types the band indicates cathode. ● Flammability: Epoxy is rated UL94V-0 ● RoHS package In order to meet environmental requirements, ST (also) offers these devices in ECOPACK® packages. ECOPACK® packages are Lead-free. The category of second level Interconnect is marked on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 5. STmite flat dimensions Dimensions Ref. L1 L E1 D b2 L3 c A Figure 11. STmite flat footprint dimensions 0.85 0.63 2.00 0.65 (0.033) (.025) (0.079) (.026) (0.037) 4.13 Min. Typ. Max. Min. Typ. Max. A 0.80 0.85 0.95 0.031 0.033 0.037 b 0.40 0.55 0.65 0.016 0.022 0.026 b2 0.70 0.85 1.00 0.027 0.033 0.039 c 0.10 0.15 0.25 0.004 0.006 0.009 D 1.75 1.90 2.05 0.069 0.075 0.081 E 3.60 3.80 3.90 0.142 0.150 0.154 E1 2.80 2.95 3.10 0.110 0.116 0.122 L 0.50 0.55 0.80 0.020 0.022 0.031 L1 2.10 2.40 2.60 0.083 0.094 0.102 L2 0.45 0.60 0.75 0.018 0.024 0.030 L3 0.20 0.35 0.50 0.008 0.014 0.020 Figure 12. Marking information Cathode bar (unidirectional devices only ) 0.95 0.65 (0.026) Inches L2 b E Millimeters 1.95 (0.077) y ww x x x Y: Year WW: week XXX: Marking (0.163) millimeters (inches) 7/10 Package information Table 6. 8/10 SMM4F Marking Type Marking SMM4F5.0A-TR 4UA SMM4F6.0A-TR 4UB SMM4F6.5A-TR 4UC SMM4F8.5A-TR 4UD SMM4F10A-TR 4UE SMM4F12A-TR 4UF SMM4F13A-TR 4UG SMM4F15A-TR 4UH SMM4F18A-TR 4UJ SMM4F20A-TR 4UK SMM4F24A-TR 4UM SMM4F26A-TR 4UN SMM4F28A-TR 4UO SMM4F33A-TR 4UQ SMM4F 4 Ordering information Ordering information Table 7. Ordering information Order code(1) SMM4FxxA-TR Marking Package Weight Base qty Delivery mode See Table 6. STmite flat 16.7 mg 12000 Tape and reel 1. xx indicates stand-off voltage 5 Revision history Table 8. Document revision history Date Revision Changes 29-Nov-2007 1 First issue. 19-Dec-2007 2 Updated IPP and RD parameters in columns 10 and 11 of Table 4. 9/10 SMM4F Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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