ETC S8050 J3Y

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
本资料由东莞长电代理:FUYAT CO.,LTD提供0769-85388861
SOT-23 Plastic-Encapsulate Transistors
S8050
SOT-23
TRANSISTOR (NPN)
FEATURES
z
Complimentary to S8550
1. BASE
2. EMITTER
Collector Current: IC=0.5A
z
3. COLLECTOR
MARKING: J3Y
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Dissipation
0.3
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40 V , IE=0
0.1
μA
Collector cut-off current
ICEO
VCB=20V , IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V ,
0.1
μA
HFE(1)
VCE=1V, IC= 50mA
120
HFE(2)
VCE=1V, IC= 500mA
50
Collector-emitter saturation voltage
VCE(sat)
IC=500 mA, IB= 50mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=500 mA, IB= 50mA
1.2
V
IC=0
350
DC current gain
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
fT
VCE=6V, IC= 20mA
f=30MHz
150
MHz
L
H
120-200
200-350
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn
Typical Characteristics
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn
S8050