2 3 2 3 2 1 4 1 Anti-Parallel APT2X100D100J 4 1 3 7 2 TO -2 4 Parallel APT2X101D100J S APT2X101D100J APT2X100D100J "UL Recognized" file # E145592 ISOTOP ® 1000V 1000V 95A 95A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • High Blocking Voltage • Increased System Power • • • • • -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters Snubber Diode Uninterruptible Power Supply (UPS) Induction Heating High Speed Rectifiers • Low Leakage Current All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions APT2X101_100D100J Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 77°C, Duty Cycle = 0.5) IFSM TJ,TSTG TL UNIT Maximum D.C. Reverse Voltage VRRM IF(RMS) Density 1000 Volts 95 131 RMS Forward Current (Square wave, 50% duty) Amps 1000 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V TYP MAX IF = 100A 1.9 2.5 IF = 200A 2.2 IF = 100A, TJ = 125°C 1.7 Volts VR = VR Rated 250 VR = VR Rated, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 110 UNIT μA 9-2009 VF MIN pF 053-0007 Rev G Symbol DYNAMIC CHARACTERISTICS Symbol APT2X101_100D100J Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J - 43 trr Reverse Recovery Time - 300 Qrr Reverse Recovery Charge - 800 - 7 - 360 ns - 4050 nC - 19 - 170 - 7400 - 70 MIN TYP IRRM Reverse Recovery Time Qrr Reverse Recovery Charge IF = 100A, diF/dt = -200A/μs VR = 667V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM VR = 667V, TC = 25°C Maximum Reverse Recovery Current trr IRRM IF = 100A, diF/dt = -200A/μs IF = 100A, diF/dt = -1000A/μs VR = 667V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps ns nC Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MAX RθJC Junction-to-Case Thermal Resistance .41 RθJA Junction-to-Ambient Thermal Resistance 20 WT Torque Package Weight oz 29.2 g Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.30 0.25 0.5 Note: 0.20 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 0.45 0.35 0.3 0.15 t1 t2 0.10 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 SINGLE PULSE 0.05 0 10-5 10-4 10-3 10-2 0.1 1 9-2009 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-0007 Rev G °C/W 1.03 Maximum Terminal & Mounting Torque 0.40 UNIT 10 lb•in 1.1 N•m TYPICAL PERFORMANCE CURVES APT2X101_100D100J 600 300 IF, FORWARD CURRENT (A) 250 200 TJ = 150°C 150 100 TJ = 125°C TJ = 25°C 50 trr, REVERSE RECOVERY TIME (ns) T =125°C J V =667V R 500 200A 400 100A 300 50A 200 100 TJ = -55°C 0 0 0 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/μs) Figure 3. Reverse Recovery Time vs. Current Rate of Change R 200A 8000 100A 6000 4000 50A 2000 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) T =125°C J V =667V 0 T =125°C J V =667V 70 200A R 60 50 40 100A 30 50A 20 10 0 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/μs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 0 200 140 1.4 1.2 trr Qrr Duty cycle = 0.5 T =150°C J 120 100 1.0 IRRM 0.8 trr 0.6 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 200 80 10000 80 60 40 0.4 Qrr 0.2 0.0 0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 20 0 25 50 75 100 125 150 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 1000 800 9-2009 600 400 200 0 .6 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-0007 Rev G CJ, JUNCTION CAPACITANCE (pF) 1200 APT2X101_100D100J Vr diF /dt Adjust +18V APT75GP120B2LL 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 0.25 IRRM 3 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 053-0007 Rev G 9-2009 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2x100DQ60J APT2x101DQ60J Anode 2 Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.