D TO-247 G ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz S THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION (1-15MHz ) POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications. • Specified 100 Volt, 13.56 MHz Characteristics: • Output Power = 200 Watts. • Gain = 22dB (Typ.) • Efficiency = 73% (Typ.) • Low Cost Common Source RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF442/443 VDSS Drain-Source Voltage 300 VDGO Drain-Gate Voltage 300 ID UNIT Volts Continuous Drain Current @ TC = 25°C 8 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 167 Watts Junction to Case 0.75 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 300 VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) 1 TYP MAX UNIT Volts (ID(ON) = 6.5A, VGS = 10V) 6 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 Forward Transconductance (VDS = 10V, ID = 5.5A) 3.5 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 4.5 µA nA mhos 2 5 Volts APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-4506 Rev C CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. ARF442/443 DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Crss MIN TYP MAX 730 900 VDS = 100V 100 140 f = 1 MHz 33 50 MAX Test Conditions VGS = 0V Reverse Transfer Capacitance UNIT pF FUNCTIONAL CHARACTERISTICS Symbol GPS1 Characteristic Common Source Amplifier Power Gain η1 Drain Efficiency ψ Electrical Ruggedness VSWR 30:1 GPS2 η2 Test Conditions MIN TYP VDD = 100V 17 18.9 dB 73 % VGS = 0V Pout = 200W f = 13.56MHz UNIT No Degradation in Output Power Common Source Amplifier Power Gain VDD = 100V, Pout = 200W 22 dB Drain Efficiency IDQ = 50mA, f = 13.56MHz 65 % 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL 13.56 MHz, 400 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT .01µF Q1 RF Input L1 0.5µH BFC1 T1 2:1 C1 C2 T2 R1 75-480pF RF Output C3 .01µF 10K C4 C5 .01µF Q2 .01µF RFC1 C6 C8 C7 .01µF .01µF C9 .01µF C10 + .1µF VDD = 100V 10µF (100V) Parts List C1 = 75-480pF Compression Mica C2, C3, C4, C5, C6, C7 & C8 = .01µF @ 200V, CK06 C9 = .1µF @ 100V, CK06 C10 = 10µF @ 100V Electrolytic R1 = 10KΩ, 5%, 1/4W, Carbon Q1 = ARF442 Q2 = ARF443 L1 = 7.5 T of #18AWG, ID = .438", L = 0.5µH 050-4506 Rev C BFC1 = Balanced DC Feed Choke; 7 T of #22 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. µi = 125 RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. µi = 2000 T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. µi = 850 T2 = 1:1 Z Transmission Line Transformer, using 50Ω coax. • Coax = 22" of mini 50Ω PTFE coax, OD = .095" • A large 2-hole balun core was constructed by gluing two Fair-Rite #2643102002, µi = 850 cores together. • The transformer is constructed by winding 4.5 turns of the coax around the center of the balun core. PCB = .062" G10 Epoxy Glass. ARF442/443 RF POWER OUT (WATTS) 500 Performance of aTypical Push-Pull Power Amplifier (2-Devices) f = 13.56 MHz V = 100V 400 DD 300 200 100 0 0 1 2 3 4 5 6 RF POWER IN (WATTS) Figure 1, RF Power Out vs RF Power In TJ = +25°C 8 TJ = +125°C 4 TJ = +125°C TJ = +25°C TJ = -55°C 10 re N) He (O n tio R DS a er By Op ited Lim 1 .5 TC =+25°C TJ =+150°C 1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Maximum DC Safe Operating Area DS =V GS 1.1 1.0 0.9 0.8 0.7 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 10 ID, DRAIN CURRENT (AMPERES) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 12 .1 9 Figure 2, RF Power Out vs RF Power In V VDS = 30V 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) TJ = -55°C 5 8 1.2 16 0 7 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 3, Threshold Voltage vs Temperature 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5, Breakdown Voltage vs Temperature 3,000 Ciss 500 Coss Crss 100 50 10 .01 .05 .1 .5 1 5 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Capacitance vs. Drain-To-Source Voltage 50 100 050-4506 Rev C C, CAPACITANCE (pF) 1,000 ARF442/443 TO-247AD Package Outline ARF442 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Source 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) ARF44E 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) GATE SOURCE DRAIN 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) ARF443 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Source 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) ARF44O 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) DRAIN SOURCE GATE 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 050-4506 Rev C NOTE: The ARF442 and ARF443 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388 -0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61