D TO-247 G ARF444 300W 300V 13.56MHz ARF445 300W 300V 13.56MHz S THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445. RF OPERATION (1-15MHz ) POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications. • Specified 300 Volt, 13.56 MHz Characteristics: • Output Power = 300 Watts. • Gain = 18.7dB (Typ.) • Efficiency = 83% (Typ.) • Low Cost Common Source RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF444/445 UNIT VDSS Drain-Source Voltage 900 VDGO Drain-Gate Voltage 900 Continuous Drain Current @ TC = 25°C 6.5 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 208 Watts Junction to Case 0.60 °C/W ID RθJC TJ,TSTG TL Volts -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 900 VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) 1 TYP MAX UNIT Volts (ID(ON) = 3.5A, VGS = 10V) 7 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 Forward Transconductance (VDS = 25V, ID = 3.5A) 4 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 2 5.7 µA nA mhos 5 Volts APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-4906 Rev D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. DYNAMIC CHARACTERISTICS Symbol Characteristic MIN TYP MAX 1500 1800 VDS = 300V 90 130 f = 1 MHz 28 50 MAX Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss ARF444/445 VGS = 0V Reverse Transfer Capacitance UNIT pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP VDD = 300V 17 18.7 dB 83 % VGS = 0V η Drain Efficiency ψ Electrical Ruggedness VSWR 30:1 Pout = 300W UNIT No Degradation in Output Power f = 13.56MHz 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL 13.56 MHz, 1000 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT Circuit Characteristics Pout = 1000W R1-R4 Q1 Gain = 16.5dB Efficiency = 80% L1 J1 RF INPUT J2 RF OUTPUT R5-R8 BFC1 Q2 T1 C1 T2 R9-R12 Q3 L2 RFC1 R13-R16 Q4 C2 C3 C4 C5 C6 J3 300VDC C7 C8 050-4906 Rev D Parts List R1-R16 = 4.7Ω 1W C1 = 200pF Chip Capacitor C2-C6 = 0.1µF Disk Ceramic C7, C8 = 0.01 Disk Ceramic Q1, Q3 = ARF444 Q2, Q4 = ARF445 L1, L2 = 0.37µH: 6T, #18AWG, ID=0.438 RFC1 = 2T, #14 PTFE coated twisted pair on a Fair-Rite #2643665702 shield bead, µi=850 T1 = 9:1 (Z) conventional transformer; 3:1 (T), #18 stranded PTFE coated wire on two Fair-Rite #2643540002, µi=850 T2 = 1:1 (Z) conventional transformer; 2:2 (T), #14 stranded PTFE coated wire on two stacks of three Fair-Rite #2643102002 shielded bead, µi=850 BFC1 = 6T, #18 Twisted pair stranded PTFE coated wire on three stacked Indiana General Toroid #F624-19-Q1 µi=125 ARF444/445 RF POWER OUT (WATTS) 1200 Performance of aTypical Push-Pull Power Amplifier (4-Devices) f = 13.56 MHz V = 300V Duty Cycle = 50% DD V GS = 0V 800 Continuous Wave 400 0 0 10 20 RF POWER IN (WATTS) Figure 1, RF Power Out vs RF Power In 12 TJ = +25°C TJ = +125°C 8 4 TJ = +125°C TJ = +25°C TJ = -55°C 5 re N) He (O n tio R DS a er By Op ited Lim 1 .5 TC = +25°C TJ = +150°C 1 5 10 50 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Maximum DC Safe Operating Area DS =V GS 1.1 1.0 0.9 0.8 0.7 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 10 ID, DRAIN CURRENT (AMPERES) Figure 2, RF Power Out vs RF Power In V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) VDS = 30V 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) TJ = -55°C .1 40 1.2 16 0 30 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 3, Threshold Voltage vs Temperature 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5, Breakdown Voltage vs Temperature 5,000 1,000 500 Coss 100 Crss 50 10 .01 .05 .1 .5 1 5 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Capacitance vs. Drain-To-Source Voltage 50 100 300 050-4906 Rev D C, CAPACITANCE (pF) Ciss ARF444/445 TO-247AD Package Outline ARF444 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Source 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) ARF44E 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) GATE SOURCE DRAIN 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) ARF445 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Source 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) ARF44O 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) DRAIN SOURCE GATE 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 050-4906 Rev D NOTE: The ARF444 and ARF445 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388 -0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61