Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Differential Option Technical Data IVA-05228 Features Description • Differential Input and Output Capability • DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates • High Gain: 30 dB Typical • Wide Gain Control Range: 30␣ dB Typical • 5 V Bias • 5 V Vgc Control Voltage, Igc␣ <␣ 3mA • Fast Gain Control Response: < 10 ns Typical • Hermetic Ceramic Package The IVA-05228 is a variable gain amplifier housed in a miniature ceramic hermetic surface mount package. This device can be used in any combination of singleended or differential inputs or outputs (see Functional Block Diagram). The lowest frequency of operation is limited only by the values of user selected blocking and bypass capacitors. Applications • LNA or Gain Stage for 2.4␣ GHz and 5.7 GHz ISM Bands • Front End Amplifier for GPS Receivers • LNA or Gain Stage for PCN and MMDS Applications • C-Band Satellite Receivers • Broadband Amplifier for Instrumentation Typical applications include variable gain amplification for fiber optic systems (e.g., SONET) with data rates up to 2.0 Gb/s, mobile radio and satellite receivers, millimeter wave receiver IF amplifiers and communication receivers. 28 Package PIN 1 ISOSAT™-I silicon bipolar process. This process uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide inter-metal dielectric and scratch protection to achieve excellent performance, uniformity and reliability. The IVA series of variable gain amplifiers is fabricated using HP’s 10 GHz fT, 25 GHz fMAX 6-181 5965-9683E Absolute Maximum Ratings Symbol VCC-Vee Parameter Device Voltage Units Thermal Resistance: θjc = 50°C/W Notes: 1. Permanent damage may occur is any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 20 mW/°C for TC > 170°C. 4. See MEASUREMENTS section "Thermal Resistance" in Communications Components Catalog for more information. V 8 Power Dissipation[2,3] mW 600 Input Power dBm +14 V 7 Vgc-Vee [2,4] Absolute Maximum[1] TJ Junction Temperature °C 200 TSTG Storage Temperature °C -65 to 200 IVA-05228 Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions:[2] VCC = 5 V, Vee = 0 V, Vgc = 0 V, ZO = 50 Ω Gp Power Gain (|S21|2) ∆Gp Gain Flatness f3dB 3 dB Bandwidth[3] GCR Gain Control Range[4] ISO Reverse Isolation (|S21|2) Input VSWR VSWR Output VSWR Units Min. Typ. f = 0.5 GHz dB 25 30 f = 0.05 to 1.0 GHz dB Max. ± 0.5 GHz 1.0 1.5 f = 0.05 GHz Vgc = 0 to 5 V dB 25 30 f = 0.05 GHz Vgc = 0 to 5 V dB 25 30 f = 0.05 to 1.5 GHz Vgc = 0 to 5 V f = 0.05 to 1.5 GHz Vgc = 0 to 5 V 1.7:1 1.5:1 NF50 50 Ω Noise Figure f = 0.5 GHz dB 9 P1dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm -3 VOUT Peak-to-Peak Single-Ended Output Voltage f = 0.5 GHz mVpp 450 IP3 Output Third Order Intercept Point f = 0.5 GHz dBm 7 tD Group Delay f = 0.5 GHz psec 400 ICC Supply Current mA 25 35 45 Notes: 1. The recommended operating voltage range for this device is 4 to 6 V. Typical performance as a function of voltage is on the following page. 2. As measured using Input Pin 1 and Output Pin 6, with Output Pin 7 terminated into 50 ohms and Input Pin 4 at AC ground. 3. Referenced from 50 MHz Gain. 4. The recommended gain control range for these devices for dynamic control is 0 to 4.2 V. Operation at gain control settings above 4.2V may result in gain increase rather than gain decrease. 6-182 Typical Biasing Configuration and Functional Block Diagram Single Ended Input / Single Ended Output Differential Input / Differential Output C block C block Input 1 8 2 7 Vgc Input Output – Vee = 0 V 6 3 Vee = 0 V C block Output + 5 4 Input C bypass C block 1 8 2 7 3 6 4 5 C bypass C bypass Vee = 0 V * Optional: For Single-Ended Output operation, Pin 7 may be left unterminated (no C block or 50 Ω) C bypass = 1000 pF typical Good grounding of Pins 2, 3 is critical for proper operation and good VSWR performance of this part. IVA-05228 Typical Performance, TA = 25°C, VCC = 5 V, Vee = 0 V 45 34 0 32 –2 40 –4 35 Vgc < 2.4 V 0 4.0 V 30 28 30 –6 ICC (mA) 3.7 V GP (dB) G P (dB) 10 P1 dB (dBm) P1 dB 20 GP –10 5.0 V 26 –20 25 –8 ICC 24 0.2 0.5 1.0 2.0 20 –10 3 4.0 4 5 RF FREQUENCY (GHz) 6 7 VCC (V) Figure 2. Power Gain and P1 dB at 0.5GHz and ICC vs. Bias Voltage with Vgc = 0 V. Figure 1. Typical Variable Gain vs. Frequency. 34 0 45 32 –1 40 40 5 35 –3 30 P1 dB (dBm) –2 GP ICC (mA) 30 P1 dB (dBm) GP (dB) 30 20 4 10 3 0 28 2 P1 dB 1 –10 Igc 26 –4 –55 –25 +25 +85 25 +125 –20 0 0 2 3 4 Vgc (V) TEMPERATURE (C) Figure 3. Power Gain and P1 dB at 0.5GHz and ICC vs. Case Temperature with Vgc = 0 V. 1 Figure 4. Power Gain and P1 dB at 0.5GHz and Igc vs. Gain Control Voltage. 6-183 5 Igc (mA) –30 0.1 50 Ω* C block Output + C block VCC = 7 V 30 Vgc C block VCC = 5 V IVA-05228 Typical Performance, continued, TA = 25°C, VCC = 5 V, Vee = 0 V 0 35 GP = 15 –25 dB –5 –10 NF (dB) P1 dB (dBm) GP = 10 dB 25 GP = 5 dB –15 GP = 15 dB 15 –20 GP = 25 dB GP = –5 dB –25 0.01 0.1 0.2 0.5 1.0 2.0 5 0.01 0.1 4.0 0.2 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 5. P1 dB vs. Frequency. Figure 6. Noise Figure vs. Frequency. 2 500 INPUT 1.5 tD (psec) VSWR GP = –5 dB OUTPUT GP = 25 dB 400 GP = 5 dB 1 0.1 0.2 0.5 1.0 2.0 300 0.1 4.0 0.2 FREQUENCY (GHz) 0.5 1.0 Figure 7. Input and Output VSWR vs. Frequency, Vgc = 0 – 5 V. 1 8 2 7 1.27 (0.050) TYP. V052 4 6 5 TOP VIEW 4.57 ± 0.13 (0.180 ± 0.005 SQ) 5.33 ± 0.25 (0.210 ± 0.010) 0.38 ± 0.08 (0.015 ± 0.003) 0.76 ± 0.13 (0.030 ± 0.005) 8° MAX. 2.08 ± 0.25 (0.082 ± 0.010) END VIEW 0.13 ± 0.05 (0.005 ± 0.002) 4.0 Figure 8. Group Delay vs. Frequency. 28 Package Outline 3 2.0 FREQUENCY (GHz) 2.54 ± 0.25 (0.100 ± 0.010) 10.16 ± 0.25 (0.400 ± 0.010) SIDE VIEW 0.08 ± 0.08 (0.003 ± 0.003) 1.78 ± 0.25 (0.070 ± 0.010) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-184