AGILENT INA

Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
INA-02100
Features
• Cascadable 50 Ω Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31.5 dB Typical at 0.5 GHz
25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 1.0 GHz
• Unconditionally Stable
(k>1)
Description
The INA-02100 is a low-noise silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) feedback
amplifier chip. It is designed for
narrow or wide bandwidth industrial and military applications that
require high gain and low noise IF
or RF amplification.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielectric and scratch protection to
achieve excellent performance,
uniformity and reliability.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.[1]
VCC
RFC (Optional)
Rbias
Cblock
RF IN
Cblock
3
1
2
5965-9673E
RF
OUT
GND
2
GND
1
RF
IN
Notes:
1. See Application Note, “A005:
Transistor Chip Use” for additional
information.
Typical Biasing Configuration
4
Chip Outline[1]
RF OUT
Vd = 5.5 V
(Nominal)
6-90
INA-02100 Absolute Maximum Ratings
Absolute Maximum[1]
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance[2]:
θjc = 60°C/W
50 mA
400 mW
+13 dBm
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C
3. Derate at 16.7 mW/°C for TMS >
176°C.
INA-02100 Electrical Specifications [1,3], TA = 25°C
Symbol
Parameters and Test Conditions [2]: Id = 35 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 0.5 GHz
∆GP
Gain Flatness
f = 0.1 to 1.0 GHz
f3 dB
3 dB Bandwidth
ISO
Reverse Isolation (|S12| 2)
f = 0.01 to 1.0 GHz
Input VSWR
f = 0.01 to 1.0 GHz
VSWR
Output VSWR
f = 0.01 to 1.0 GHz
NF
50 Ω Noise Figure
f = 0.5 GHz
Units
Min.
Typ.
dB
31.5
dB
± 1.5
GHz
1.0
dB
Max.
39
1.4:1
1.5:1
dB
2.0
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
11
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
23
tD
Group Delay
f = 0.5 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
V
350
4.0
5.5
mV/°C
7.0
+10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-02100 mounted in a 70 mil stripline package.
INA-02100 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 5 mA)
S21
S11
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.01
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.80
1.00
1.20
1.40
1.60
1.80
2.00
2.50
3.00
0.06
0.05
0.03
0.02
0.01
0.02
0.03
0.06
0.10
0.17
0.24
0.30
0.37
0.42
0.46
0.50
0.51
–4
–8
–46
–52
–46
–44
–35
–29
–41
–60
–73
–89
–103
–116
–128
–146
–162
32.5
32.5
32.3
31.8
31.1
30.4
29.7
29.0
27.9
26.9
26.0
25.1
24.1
22.9
21.5
18.3
14.6
42.1
42.0
41.3
39.0
36.2
33.3
30.7
28.4
24.8
22.0
19.9
18.0
16.0
14.0
12.0
8.2
5.4
–2
–8
–16
–30
–43
–55
–65
–74
–92
–108
–124
–141
–157
–174
171
142
116
–39.3
–39.4
–37.9
–39.2
–38.8
–40.4
–39.3
–39.5
–38.1
–36.4
–35.5
–34.1
–32.6
–33.1
–31.4
–29.3
–28.5
.011
.011
.013
.011
.011
.010
.011
.011
.012
.015
.017
.020
.023
.022
.027
.034
.038
14
12
6
–4
–12
–2
–17
–5
–9
–19
–16
–16
–30
–28
–31
–44
–47
.20
.20
.20
.21
.22
.24
.26
.28
.32
.34
.36
.38
.32
.26
.22
.19
.15
–1
1
–1
3
4
2
–1
–4
–14
–26
–40
–60
–91
–111
–122
–148
178
1.27
1.28
1.17
1.33
1.36
1.63
1.56
1.67
1.58
1.41
1.32
1.17
1.19
1.29
1.25
1.34
1.83
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Communications Components Designer’s Catalog.
6-91
INA-02100 Typical Performance, TA = 25°C
(Unless otherwise noted: The values are the achievable performance for the INA-02100 mounted in a 70 mil
stripline package.)
35
35
50
3.5
Gain Flat to DC
TMS = +125°C
2.5
20
30
30
Gp (dB)
25
Id (mA)
3.0
NF (dB)
Gp (dB)
30
0.1 GHz
0.5 GHz
TMS = +25°C
TMS = –55°C
40
20
2.0
1.0 GHz
1.5 GHz
25
20
10
15
.01 .02
.05
0.1 0.2
0.5
1.0
1.5
2.0
0
2
4
6
8
Vd (V)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA.
Figure 2. Device Current vs. Voltage.
50
3.5
Id = 40 mA
Gp
12
30
12
10
3.0
Id = 35 mA
9
NF (dB)
14
P1 dB
P1 dB (dBm)
3.0
29
P1 dB (dBm)
Gp (dB)
31
40
Figure 3. Power Gain vs. Current.
15
32
30
Id (mA)
FREQUENCY (GHz)
NF (dB)
15
20
0
Id = 30 mA
2.5
6
8
2.5
NF
2.0
2.0
Id = 30 to 40 mA
3
1.0
1.0
–55
–25
+25
+85
+125
TEMPERATURE (°C)
0
.02
.05
0.1
0.2
2.0
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
INA-02100 Chip Dimensions
RF
OUT
(3)
(4)
500 ± 13 µm
19.7 ± 0.5 mil
(2)
(1)
1.0
FREQUENCY (GHz)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 0.1 GHz, Id = 35 mA.
GND
2
0.5
GND
1
RF
IN
375 ± 13 µm
14.8 ± 0.5 mil
Chip thickness is 140 µm/5.5 mil. Bond Pads are
41 µm/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
6-92
1.5
.02
.05
0.1
0.2
0.5
1.0
2.0
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.