HP MSA-1110

Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-1110
Features
• High Dynamic Range
Cascadable 50 Ω or 75 Ω
Gain Block
• 3 dB Bandwidth:
50 MHz to 1.6 GHz
• 17.5 dBm Typical P1 dB at
0.5 GHz
• 12 dB Typical 50 Ω Gain at
0.5 GHz
• 3.5 dB Typical Noise Figure
at 0.5 GHz
• Hermetic Gold-ceramic
Microstrip Package
Description
The MSA-1110 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic high
reliability package. This MMIC is
designed for high dynamic range
in either 50 or 75 Ω systems by
combining low noise figure with
high IP3. Typical applications
include narrow and broadband
linear amplifiers in industrial and
military systems.
The MSA-series is fabricated using
Agilent’s 10 GHz fT, 25 GHz fMAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 8 V
RFC (Optional)
4
C block
C block
3
IN
1
OUT
MSA
2
Vd = 5.5 V
100 mil Package
2
MSA-1110 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum[1]
90 mA
560 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,4]:
θjc = 135°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.4 mW/°C for TC > 124°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information.
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω
Units
Min.
11.5
GP
Power Gain (|S21| 2)
f = 0.1 GHz
dB
∆GP
Gain Flatness
f = 0.1 to 1.0 GHz
dB
f3 dB
3 dB Bandwidth[2]
Input VSWR
VSWR
GHz
Typ.
Max.
12.5
13.5
±0.7
±1.0
1.6
f = 0.1 to 1.0 GHz
1.7:1
Output VSWR
f = 0.1 to 1.0 GHz
NF
50 Ω Noise Figure
f = 0.5 GHz
1.9:1
P1 dB
Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
tD
Group Delay
f = 0.5 GHz
psec
Vd
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
dB
V
mV/°C
3.5
16.0
4.5
17.5
30.0
160
4.5
5.5
6.5
–8.0
Notes:
1. The recommended operating current range for this device is 40 to 75 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (G P).
3
MSA-1110 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 60 mA)
S11
S21
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
.0005
.005
.025
.050
.100
.200
.300
.400
.500
.600
.700
.800
.900
1.000
1.500
2.000
2.500
3.000
.83
.54
.15
.10
.08
.09
.11
.13
.16
.18
.21
.23
.25
.27
.36
.42
.47
.47
–7
–50
–78
–64
–63
–74
–85
–94
–102
–108
–114
–120
–126
–131
–153
–171
177
159
19.5
16.8
13.0
12.6
12.5
12.4
12.3
12.3
12.1
12.0
11.8
11.6
11.4
11.1
9.8
8.4
7.2
5.9
9.44
6.92
4.47
4.26
4.23
4.17
4.10
4.10
4.04
3.98
3.89
3.80
3.71
3.60
3.10
2.64
2.29
1.97
176
158
167
171
171
166
160
154
148
143
137
131
126
120
96
74
59
43
–31.9
–18.7
–16.6
–16.5
–16.5
–16.4
–16.2
–16.1
–15.9
–15.6
–15.4
–15.2
–15.0
–14.8
–13.8
–13.3
–12.5
–13.2
.025
.116
.148
.149
.150
.152
.154
.157
.161
.165
.169
.173
.178
.182
.203
.217
.236
.220
39
34
9
5
4
4
5
6
7
8
8
8
8
8
4
1
–2
–10
.84
.55
.15
.10
.08
.09
.12
.15
.18
.20
.23
.25
.28
.30
.37
.40
.41
.38
–7
–50
–79
–67
–66
–78
–89
–98
–106
–113
–120
–126
–132
–137
–160
–178
172
157
0.77
0.60
1.03
1.08
1.09
1.09
1.07
1.05
1.02
1.00
0.97
0.95
0.92
0.91
0.83
0.82
0.80
0.95
A model for this device is available in the DEVICE MODELS section.
Typical Performance, TA = 25°C, ZO = 50 Ω
(unless otherwise noted)
100
16
ZO = 75 Ω
Id (mA)
G p (dB)
10
8
80 T = –55°C
C
12
60
10
Gp (dB)
ZO = 50 Ω
12
14
TC = +125°C
TC = +25°C
14
40
6
0.1 GHz
0.5 GHz
1.0 GHz,
1.0 GHz
2.0 GHz
8
4
6
20
2
0
.02
0
.05
0.1
0.5 1.0
2.0 3.0
4
0
2
4
20
17
20
I d = 75 mA
11
5
18
3
–55
+25
+125
4.0
16
14
NF
I d = 60 mA
NF (dB)
P1 dB (dBm)
12
Gp (dB)
4.5
13
GP
80
5.0
P1 dB
4
60
Figure 3. Power Gain vs. Current.
22
18
16
40
I d (mA)
Figure 2. Device Current vs. Voltage.
Figure 1. Typical Power Gain vs.
Frequency, Id = 60 mA.
P1 dB (dBm)
8
Vd (V)
FREQUENCY (GHz)
NF (dB)
6
3.5
I d = 75 mA
I d = 60 mA
I d = 40 mA
12
0.1
0.2 0.3
0.5
1.0
2.0
3.0
0.1
I d = 40 mA
0.2 0.3
0.5
1.0
2.0
TEMPERATURE (°C)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, Noise Figure and Power
Gain vs. Case Temperature,
f = 0.5 GHz, Id = 60 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
100 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF OUTPUT
AND BIAS
RF INPUT
3
1
2
.004 ± .002
.10 ± .05
GROUND
.100
2.54
.495 ± .030
12.57 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.030
.76
www.semiconductor.agilent.com
Data subject to change.
Copyright © 1999 Agilent Technologies
5965-9558E (11/99)