Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0700 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0␣ dB Typical Gain at 1.0␣ GHz Description The MSA-0700 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, “Chip Use”. Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) C block IN C block OUT MSA Vd = 4.0 V 5965-9589E 6-386 Chip Outline[1] Note: 1. This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information. MSA-0700 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 60 mA 275 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 50°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting␣ Surface = 25°C. 3. Derate at 20 mW/°C for TMounting␣ Surface ␣ > 186 °C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions[2]: Id = 22 mA, ZO = 50 Ω Units Min. Typ. GP Power Gain (|S21| 2) f = 0.1 GHz dB 13.5 ∆GP Gain Flatness f = 0.1 to 1.5 GHz dB ± 0.6 f3 dB 3 dB Bandwidth VSWR GHz Input VSWR 2.5 f = 0.1 to 2.5 GHz Output VSWR f = 0.1 to 2.5 GHz NF 50 Ω Noise Figure f = 1.0 GHz Max. 2.0:1 1.6:1 dB 4.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 19.0 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 130 3.6 4.0 4.4 –7.0 Notes: 1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration. Part Number Ordering Information Part Number Devices Per Tray MSA-0700-GP4 up to 100 6-387 MSA-0700 Typical Scattering Parameters[1] (ZO = 50 Ω, TA = 25°C, Id = 22 mA) S11 S21 S12 S22 Freq. GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .04 .05 .06 .08 .10 .12 .20 .31 .38 .43 .48 .48 .49 .54 –5 –8 –19 –32 –41 –50 –73 –98 –112 –128 –141 –153 –179 154 13.5 13.5 13.5 13.5 13.4 13.2 12.7 12.1 11.0 9.6 8.2 6.8 4.6 2.5 4.75 4.74 4.74 4.71 4.67 4.59 4.30 4.05 3.55 3.01 2.57 2.20 1.70 1.34 176 172 163 156 147 138 117 97 85 69 56 45 26 9 –18.6 –18.4 –18.3 –18.1 –17.5 –17.6 –16.6 –15.8 –15.3 –15.3 –15.3 –15.2 –15.2 –15.6 .118 .120 .121 .124 .133 .133 .147 .163 .171 .171 .172 .174 .174 .166 2 3 7 9 12 13 17 17 18 17 17 14 12 13 .20 .19 .20 .21 .23 .23 .23 .22 .18 .19 .21 .26 .31 .33 –9 –16 –30 –44 –69 –68 –91 –105 –103 –96 –87 –83 –86 –98 1.14 1.14 1.13 1.12 1.07 1.07 1.01 0.94 0.93 0.97 1.01 1.07 1.22 1.38 Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 12 Gain Flat to DC 14 10 12 G p (dB) 8 6 0 0.1 0.3 0.5 1.0 3.0 10 20 30 FREQUENCY (GHz) 6.0 I d = 40 mA 12 I d = 15 mA I d = 22 mA I d = 40 mA 9 NF (dB) P1 dB (dBm) 5.5 6 I d = 22 mA 5.0 3 4.5 0 I d = 15 mA –3 0.1 4.0 0.2 0.3 0.5 1.0 2.0 4.0 6 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-388 P1 dB 5 4 +25 +85 +125 TEMPERATURE (°C) Figure 2. Power Gain vs. Current. 15 6 3 –55 –25 40 I d (mA) Figure 1. Typical Power Gain vs. Frequency, Id = 22 mA. GP 4 4 6.0 12 5 6 2 13 10 8 4 14 NF P1 dB (dBm) G p (dB) 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz G p (dB) 16 NF (dB) 14 Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 1.0 GHz, Id = 22 mA. MSA-0700 Chip Dimensions NOT APPLICABLE OPTIONAL OUTPUT[1] 419 µm 16.5 mil INPUT 419 µm 16.5 mil GROUND Unless otherwise specified, tolerances are ±13 µm / ±0.5 mils. Chip thickness is 114 µm / 4.5 mil. Bond Pads are 41 µm / 1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die. 6-389