RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description Features The Raytheon RMLA3565-58 is a single bias wideband low noise MMIC amplifier that meets the following specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits no external gate bias supply. This device uses Raytheon’s advanced 0.25 µm PHEMT process to provide low noise, high linearity and low current. 19.0 dB Gain Typical 1.5 dB Noise Figure, Typical 5.0 - 6.5 GHz Single Positive Bias Small Outline Metal Base Quad Plastic Package Internal 50Ω Matching Absolute Maximum Ratings1 Electrical Characteristics2 Parameter Symbol Value Unit Positive Drain DC Voltage (No RF) Vdd 6.5 V RF Input Power (from 50Ω source) Drain Current Case Operating Temperature Storage Temperature Range Soldering Temperature Pin(CW) Idd Tc Tstg Tsolder 0 130 -35 to 85 -40 to 110 220 dBm mA °C °C °C Parameter Min Frequency Range 3.5 17.0 Gain (Small Signal)3,4 Gain Variation vs Temp Noise Figure4 3.5 - 5 GHz 5 - 6.5 GHz Power Out, P1dB @ 5.5 GHz 8.0 Typ Max Unit 6.5 GHz dB dB/°C 19.0 -0.008 1.4 1.5 10.0 2.2 1.6 dB dB dBm Parameter OIP3 @ 5.5 GHz, +3 dBm Pout total Idd Vdd Input Return Loss Output Return Loss Thermal Resistance Rjc (Channel to Case) Min Typ 17 21.0 70.0 4.0 -15.0 -10.0 135 3.0 Max 85.0 6.0 Unit dBm mA V dB dB °C/W Notes: 1. No permanent damage with only one parameter set at maximum limit and all other parameters at typical conditions 2. All parameters met at Tc = +25 °C, Vdd = 4.0V 3. Pin = -20 dBm, Vdd = 4.0 V, Frequency 3.5 - 6.5 GHz 4. Data de-embedded from fixture loss Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier packaged in a surface mount package. It may be noted that the chip is a fully monolithic single ended two stage amplifier for 3.5 to 6.5 GHz applications. Test Fixture Figure 1 shows the outline and pin-out descriptions for the packaged device. Figure 2 shows the functional block diagram of the packaged product. A typical test fixture schematic showing external bias components is shown in figure 3. Figure 4 shows typical layout of an evaluation board corresponding to the schematic diagram. A typical performance obtained from the test fixture is shown in figure 5. The following should be noted: (1) Package pin designations are as shown in figure 1. (2) Vd is the Drain Voltage (positive) applied at the pins of the package (3) Vdd is the positive supply voltage at the evaluation board terminal Figure 1 Package Outline and Pin Designations Dimensions in inches TOP VIEW BOTTOM VIEW 0.200 SQ. 6 5 4 7 4 5 6 0.015 3 8 2 0.030 9 0.020 1 7 8 9 3 2 1 0.011 0.041 10 11 12 12 11 10 PLASTIC LID 0.075 MAX. 0.008 0.015 0.282 Figure 2 Functional Block Diagram SIDE SECTION Ground Pins# 3,5,7,13 Ground Pin# 5 Pin# Description 1 2 3 4 5 6 7 8 9 10 11 12 13 N/C RF Out GND N/C GND N/C GND RF In N/C N/C N/C Vd GND (Package Base) N/C 1,4,6,9,10,11 (Recommend grounding externally to PC board) Ground Pin# 7 RF IN Pin# 8 RF OUT Pin# 2 Vd Pin# 12 Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Figure 3 Schematic for a Typical Test Evaluation Board (RMLA3565-58-TB) Ray LA3565 -58 RF in J1 RF out J2 C2 (OPT) GRND P2 C3 C1 Figure 4 Layout and Assembly of Test Evaluation Board (RMLA3565-58-TB) Vdd P1 U1 RF In J1 RF Out J2 C1 C2 Ground (GND) P2 Test Procedure for the evaluation board (RMLA3565-58-TB) Vdd P1 The following sequence of procedure must be followed to properly test the power amplifier: Step 1: Turn off RF input power. Step 2: Use GND terminal of the evaluation board for DC supplies. Step 3: Apply drain supply voltages of +4.0 V to evaluation board terminal Vdd. Parts List Part for Test Evaluation Board (RMLA3565-58-TB) C1 C2 U1 P1, P2 J1, J2 Board Step 4: After the bias condition is established, RF input signal may now be applied. Step 5: Follow turn-off sequence of: (i) Turn off RF Input Power (ii) Turn down and off Vdd Value EIA Size Vendor(s) 330 pF 4.75 uF RMLA3565-58 Terminal SMA Connectors RO4003(Rogers) .04” x .02” .14”x .11” .28” x .28” x .07 AVX, Murata, Novacap, Sprague, ATC, AVX, Murata, Raytheon Samtec E.F. Johnson Raytheon 1.99x1.50x.032 Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Performance Data RMLA3565-58 Noise Figure Vs Frequency for Vdd from 3 Vdc to 6 Vdc (25°C) 2.20 NF (3V) 2.00 NF (4V) NF (5V) NF (dB) 1.80 NF (6V) 1.60 1.40 1.20 1.00 0.80 3.5 4 4.5 5 5.5 6 6.5 Frequency (GHz) RMLA3565-58 Noise Figure (4Vdc) Change Vs Temperature 0.5 0.4 0.3 0.2 NF (dB) 0.1 Hot (85 deg C) minus Ambient 0 Cold (-35 deg C) minus Ambient -0.1 -0.2 -0.3 -0.4 -0.5 3.5 4 4.5 5 5.5 6 6.5 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 4 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Performance Data RMLA3565-58 Small Signal Gain (Tcase = 25°C) Vs Vdd and Frequency 20.5 20 S21 (dB) 19.5 19 18.5 18 3 Vdc 4 Vdc 5 Vdc 6 Vdc 17.5 17 3.5 4 4.5 5 5.5 Frequency (GHz) 6 6.5 RMLA3565-58 Small Signal Gain (Vdd = 4 Vdc) Vs Temperature and Frequency 20.5 20 S21 (dB) 19.5 19 18.5 18 25 deg C 17.5 - 35 deg C 85 deg C 17 3.5 4 4.5 5 5.5 6 6.5 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 5 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Performance Data RMLA3565-58 Input Return Loss Vs Drain Voltage 0 3.5 4 4.5 5 5.5 6 6.5 -5 S11 (dB) -10 -15 S11 (3V) -20 S11 (4V) S11 (5V) S11 (6V) -25 Frequency (GHz) RMLA3565-58 Output Return Loss Vs Drain Voltage 0 3.5 4 4.5 5 5.5 6 6.5 -5 S22 (dB) -10 -15 -20 -25 S22 (3V) S22 (4V) S22 (5V) S22 (6V) -30 Frequency (GHz) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 6 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Performance Data RMLA3565-58 1 dB Compression (5.5 GHz) Vs Drain Voltage and Temperature 14 13 P1dB (dBm) 12 11 10 9 25 deg C - 35 deg C 85 deg C 8 7 6 3 4 5 6 Drain Voltage (Vdc) RMLA3565-58 Third Order Intercept Vs Drain Voltage and Temperature 19.5 19 18.5 OIP3 (dBm) 18 17.5 17 16.5 16 25 deg C 15.5 - 35 deg C 15 85 deg C 14.5 3 4 5 6 Drain Voltage (Vdc) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 7 Raytheon RF Components 362 Lowell Street Andover, MA 01810 RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Performance Data RMLA3565-58 Drain Current (Quiescent) Vs Drain Voltage and Temperature 0.11 0.105 0.1 Iddq (Amps) 0.095 0.09 0.085 0.08 25 deg C 0.075 - 35 deg C 85 deg C 0.07 0.065 0.06 3 4 5 6 Drain Voltage (Vdc) Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 28, 2002 Page 8 Raytheon RF Components 362 Lowell Street Andover, MA 01810