Low Noise/Medium Power GaAs MESFET Chips AFM04P3-212, AFM04P3-213 Features 213 ■ Low Noise Figure, 0.6 dB @ 4 GHz Drain Source ■ 20 dBm Output Power @ 18 GHz ■ High Associated Gain, 13 dB @ 4 GHz Source Gate Drain ■ High Power Added Efficiency, 25% Source ■ Broadband Operation, DC–26 GHz ■ Available in Tape and Reel Packaging Source Gate 212 Description The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 µm and a total gate periphery of 400 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. They also have excellent noise performance and can be used in the first and second stage of low noise amplifier design. The AFM04P3 employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Absolute Maximum Ratings Characteristic Value Drain to Source Voltage (VDS) 6V Gate to Source Voltage (VGS) -4 V Drain Current (IDS) IDSS Gate Current (IGS) 1 mA Total Power Dissipation (PT) 700 mW Storage Temperature (TST) -65 to +150°C Channel Temperature (TCH) 175°C Electrical Specifications at 25°C Parameter Test Conditions Min. Typ. Max. 90.0 140.0 190.0 60.0 80.0 Unit Saturated Drain Current (IDSS) Transconductance (gm) VDS = 2 V, VGS = 0 V Pinch-Off Voltage (VP) VDS = 5 V, IDS = 1 mA 1.0 3.0 Gate to Drain Breakdown Voltage (Vbgd) IGD = -400 µA 8.0 12.0 -V 0.6 dB Noise Figure (NF) Associated Gain (GA) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) VDS = 2 V, IDS = 25 mA, F = 4 GHz VDS = 5 V, IDS = 70 mA, F = 18 GHz Power Added Efficiency (ηadd) 5.0 -V 13.8 dB 20.0 dBm 9.0 dB 25.0 % Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/99A mA mS 1 Low Noise/Medium Power GaAs MESFET Chips Typical Performance Data Typical Noise Parameters (VDS = 2 V, IDS = 25 mA) 150 VGS = 0 V 120 lDS (mA) -0.5 V 90 AFM04P3-212, AFM04P3-213 Mag. Ang. (Normalized) GA (dB) 2 0.32 0.840 22.0 0.32 15.81 3 0.43 0.816 39.9 0.30 14.75 4 0.54 0.760 55.1 0.28 13.85 5 0.62 0.707 71.0 0.25 13.04 6 0.71 0.658 87.6 0.20 12.31 7 0.81 0.613 104.8 0.16 11.66 8 0.90 0.573 122.5 0.11 11.09 9 1.00 0.538 140.5 0.08 10.58 10 1.09 0.509 158.8 0.06 10.13 11 1.19 0.488 177.3 0.05 9.74 12 1.28 0.473 -164.2 0.06 9.39 -1.5 V 30 -2.0 V -2.5 V 0 0 1 2 3 4 RN NFMIN (dB) -1.0 V 60 Γopt Freq. (GHz) 5 VDS (V) I-V Typical S-Parameters (VDS = 5 V, IDS = 75 mA) 2 S11 S21 S12 S22 Freq. (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. MAG/ MSG (dB) 2 0.889 -52.589 5.318 130.730 0.025 60.396 0.603 -38.675 23.226 3 0.846 -73.729 4.630 107.339 0.032 43.999 0.547 -55.205 21.552 4 0.839 -93.128 4.202 94.408 0.035 47.172 0.442 -58.792 20.739 5 0.845 -114.624 4.052 72.773 0.039 33.811 0.442 -71.114 20.126 6 0.840 -138.378 3.858 53.962 0.043 26.985 0.433 -87.725 19.554 7 0.721 -161.239 3.642 36.964 0.046 24.957 0.459 -102.826 18.966 8 0.708 176.151 3.365 21.074 0.051 26.565 0.444 -115.757 18.196 9 0.726 155.765 3.020 8.127 0.052 25.272 0.367 -124.557 15.515 10 0.662 141.259 2.841 -7.015 0.061 22.692 0.379 -139.923 13.767 11 0.627 127.290 2.606 -22.373 0.067 17.602 0.364 -155.126 12.218 12 0.647 104.509 2.340 -40.840 0.078 7.397 0.313 -168.618 11.224 13 0.664 91.536 2.295 -54.578 0.098 3.156 0.353 160.641 12.045 14 0.757 76.937 2.271 -73.712 0.125 -14.059 0.464 138.233 12.603 15 0.854 59.140 2.151 -91.255 0.138 -29.083 0.480 121.701 11.912 16 0.877 41.254 2.030 -108.970 0.156 -44.222 0.477 102.016 11.136 17 0.817 22.517 1.775 -124.675 0.153 -58.620 0.510 74.410 10.633 18 0.854 8.149 1.516 -138.209 0.148 -66.477 0.532 52.097 10.094 19 0.829 0.211 1.387 -150.773 0.159 -79.718 0.667 43.603 9.418 20 0.808 -6.381 1.295 -163.174 0.158 -90.627 0.750 36.702 9.137 21 0.868 -25.384 1.311 177.989 0.177 -106.327 0.642 24.887 8.692 22 0.842 -44.086 1.290 158.446 0.190 -124.276 0.654 -3.077 8.319 23 0.892 -65.418 1.195 137.339 0.186 -140.906 0.721 -31.972 8.090 24 1.003 -85.660 1.138 120.757 0.182 -154.898 0.755 -40.865 7.956 25 0.913 -102.209 1.071 101.362 0.183 -171.299 0.714 -57.178 7.671 26 0.810 -125.908 0.925 76.234 0.152 167.541 0.630 -89.282 7.853 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/99A Low Noise/Medium Power GaAs MESFET Chips 212 AFM04P3-212, AFM04P3-213 213 0.036 (0.91 mm) 0.020 (0.51 mm) 2 PLACES SOURCE DRAIN 0.036 (0.91 mm) 2 PLACES GATE DRAIN 0.070 (1.78 mm) 0.070 (1.78 mm) 4 PLACES 0.067 (1.70 mm) MAX. SOURCE 0.020 (0.51 mm) 2 PLACES GATE 0.07 (1.78 mm) 0.027 (0.70 mm) 4 PLACES 45˚ SOURCE 0.005 (0.13 mm) 4 PLACES 0.067 (1.70 mm) Max. SOURCE 45˚ 0.005 (0.13 mm) 4 PLACES Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/99A 3